Untitled
Abstract: No abstract text available
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
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Untitled
Abstract: No abstract text available
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
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electron Detector
Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
electron Detector
S11142
United Detector silicon photodiode
electron
electron gun
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PDF
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S9904
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S9904 Direct detection of low energy electron beams with high sensitivity Features Applications l Direct detection of low energy electron beams with high sensitivity l High gain: 1200 times incident electron energy: 5 keV l φ1.0 mm hole in center of active area
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S9904
sen52-3750,
SE-171
KSPD1073E01
S9904
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capacitor .05m
Abstract: F4655-12 CAPACITOR 150pf F4655
Text: COMPACT MCP ASSEMBLY FOR TOF TIME OF FLIGHT F4655-12 High Speed Detection of Positive / Negative Ion or Electron FEATURES Detection of Positive/Negative lon or Electron High Speed Response High Gain High S/N Ratio High Pulse Height Resolution Wide Dynamic Range
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F4655-12
TMCPF0068
F4655-12
F4655
S-164-40
TMCP1010E02
capacitor .05m
CAPACITOR 150pf
F4655
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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windmill design
Abstract: 918* replacement R5150-30
Text: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-30 The R5150-30 series is a new family of ion detectors developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-30 series has excellent noise elimination effects and an off-axis electrode structure
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R5150-30
R5150-30
S-164-40
1007E01
windmill design
918* replacement
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Electron Multipliers
Abstract: No abstract text available
Text: PRODUCT LINE-UP Electron multipliers are mainly used as positive/negative ion detectors. They are also useful for detecting and measuring vacuum UV rays and soft X-rays. Hamamatsu electron multipliers have a high gain multiplication factor yet low dark current, allowing
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R4146-10
R6985-80
R8811
R2362
R5150-10
SE-164
TPMH1354E01
B1201
Electron Multipliers
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PDF
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R5150-10
Abstract: No abstract text available
Text: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-10 The R5150-10 is a new family of Hamamatsu ion detector. Thanks to Hamamatsu unique electron trajectory simulation technology, it delivers high gain, fast response and wide dynamic range. A newly developed secondary emitting surface
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R5150-10
R5150-10
S-164-40
1006E01
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S12237-02P
Abstract: No abstract text available
Text: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36
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pmt amplifier circuit
Abstract: pmt divider circuit ICF114 pmt circuit pmt high voltage pmt divider circuit transistor H8770 vacuum tube amplifier electron Detector hamamatsu PMT
Text: AR Y MI N PR ELI Electron Detection Unit H8770 HAMAMATSU has introduced new Electron Detection Unit H8770, consist of newly developed extremely fast decay phosphor and high sensitivity compact PMT. Decay time of the phosphor is faster than 1ns, and it can present
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H8770
H8770,
TPMOB0152EA
720ps
SE-171-41
TPMO0121E01
pmt amplifier circuit
pmt divider circuit
ICF114
pmt circuit
pmt high voltage
pmt divider circuit transistor
H8770
vacuum tube amplifier
electron Detector
hamamatsu PMT
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PDF
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windmill design
Abstract: R5150-30 R5150-80
Text: ELECTRON MULTIPLIER PRELIMINARY DATA FEB. 1998 R5150-80 The R5150-80 is a new family of ion detector developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-80 has excellent noise elimination effects and an off-axis electrode structure and conversion type
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R5150-80
R5150-80
S-164-40
1008E01
windmill design
R5150-30
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R5150
Abstract: R5150-90
Text: PRELIMINARY Compact Ion Detectors R5150-50, -90 Detection Efficiency vs. Input Ion Energy Structure R5150-90 GND Q-POLE FARADAY-CUP The electron lens created by the Faraday cup, the ion deflection electrodes and the electron multiplier electrodes maintains high detection efficiency even when input ion energy increases.
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R5150-50,
R5150-90
R5150-
B0059EA
SE-171-41
R5150
R5150-90
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Emcore solar cell
Abstract: GaAs tunnel diode multi-junction "solar cell" NIEL proton tunnel diode tunnel diode GaAs GAAS multi-junction solar cell" NIEL for solar cell inp
Text: PROTON AND ELECTRON RADIATION ANALYSIS OF GaInP2/GaAs SOLAR CELLS P. R. Sharps, C. H. Thang, P. A. Martin, and H. Q. Hou EMCORE Photovoltaics 10420 Research Road SE Albuquerque, NM 87112 ABSTRACT Electron and proton radiation damage analysis of solar cells is extremely important for predicting the response of
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OR-2000
Emcore solar cell
GaAs tunnel diode
multi-junction "solar cell"
NIEL
proton
tunnel diode
tunnel diode GaAs
GAAS multi-junction solar cell"
NIEL for solar cell inp
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sartorius
Abstract: AR237J PAR710 D9000 ellipsometer photoresist
Text: 193nm CD shrinkage under SEM: modeling the mechanism Andrew Habermas1, Dongsung Hong1, Matthew Ross2, William Livesay2 Cypress Semiconductor, 2401 East 86th St, Bloomington, MN 55425 2 Electron Vision Corp., 10119 Carroll Canyon Road, San Diego, CA 92131-1109l
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193nm
92131-1109l
248nm
sartorius
AR237J
PAR710
D9000
ellipsometer
photoresist
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S1L50282F23K100
Abstract: NL2432DR22-11B 2.6 TFT color LCD Module 240 X 320 nec tft display module photodetector nec DOD-N-0249 S1L50282f S1L50282F2 3.2 tft color touch lcd display module Traffic Light Controller Circuit Block Diagram
Text: DOD-N-0249 1/20 NEC Corporation NEC Electron Devices Display Device Operations Unit Color LCD Division 2nd Engineering Department TFT COLOR LCD MODULE Type: NL2432DR22-11B 8.9cm 3.5 Type , QVGA SPECIFICATIONS （Second Edition, July 10, 2001） PRELIMINARY
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DOD-N-0249
NL2432DR22-11B
DOD-N-0206
4552g
S1L50282F23K100
NL2432DR22-11B
2.6 TFT color LCD Module 240 X 320
nec tft display module
photodetector nec
DOD-N-0249
S1L50282f
S1L50282F2
3.2 tft color touch lcd display module
Traffic Light Controller Circuit Block Diagram
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PDF
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SBG-TT-0046-E
Abstract: ID78K0 U15-18 hl29418 nec floppy circuit AA13 AB17 usaa
Text: NEC Microcomputer Technical Information CP K , O ID78K0 Integrated Debugger for 78K/0 Series Upgrade Document No. SBG-TT-0046-E 1/3 Date issued November 26, 2001 Issued by Microcomputer Tool Group Sales Engineering Div. NEC Electron Devices NEC Corporation
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ID78K0
78K/0
SBG-TT-0046-E
ID78K
U15185EJ1)
ID78K0
SBG-T-2481-E)
SxxxxID78K0
SBG-TT-0046-E
U15-18
hl29418
nec floppy circuit
AA13
AB17
usaa
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PDF
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Untitled
Abstract: No abstract text available
Text: DOD-N-0155 1/24 NEC Corporation NEC Electron Devices Display Device Operations Unit Color LCD Division 2nd Engineering Department TFT COLOR LCD MODULE Type: NL3224BC35-20 14cm 5.5 Type , QVGA SPECIFICATIONS PRELIMINARY （First Edition）
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DOD-N-0155
NL3224BC35-20
33pin
13MAX)
BHR-03VS-1
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PDF
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Untitled
Abstract: No abstract text available
Text: DOD - M - 0278 1/32 TFT COLOR LCD MODULE NL6448AC63-01 51cm 20.1 Type VGA DATA SHEET (1st Edition) All information is subject to change without notice. 1st Engineering Department Color LCD Division Display Device Operations Unit NEC Electron Devices NEC Corporation
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NL6448AC63-01
12pcs
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Ta 8135
Abstract: No abstract text available
Text: DOD-Ｈ-8135 1/56 TFT COLOR LCD MODULE Type: NL128102AC31-02A 51cm 20.1 Type , SXGA SPECIFICATIONS （First Edition） PRELIMINARY This document is preliminary. All information in this document are subject to change without prior notice. NEC Corporation NEC Electron Devices
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NL128102AC31-02A
DOD-H-8135
Ta 8135
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2.6 TFT color LCD Module 240 X 320
Abstract: NL3224CR24-05A nec 14 tv repair TFT LCD display circuit diagram of 30 pin out NEC TV MODULE
Text: DOD-N-0110 1/20 TFT COLOR LCD MODULE Type: NL3224CR24-05A 9.6cm 3.8 Type , QVGA SPECIFICATIONS （First Edition） PRELIMINARY This document is preliminary. All information in this document is subject to change without prior notice. NEC Corporation NEC Electron Devices
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DOD-N-0110
NL3224CR24-05A
DOD-N-0110
2.6 TFT color LCD Module 240 X 320
NL3224CR24-05A
nec 14 tv repair
TFT LCD display circuit diagram of 30 pin out
NEC TV MODULE
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PDF
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Ic 9430
Abstract: Scans-048 Electron Device Mfg Corp
Text: Electron Device Mfg. Corp. E u s s ia , 194156, Sanct-P etersburg, Engels pr., 27 Telephone 812 552 45 07 Telefax (812) 553 70 01 Telex 121466 ELEKS SU Electron Device Mfg.Corp T E X H H H E C K H E X A P A K T E P H C T H K H YJ13 D E L A Y L IN E S P E C IF IC A T IO N S
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OCR Scan
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28-2A
Ic 9430
Scans-048
Electron Device Mfg Corp
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PDF
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2SJ136
Abstract: ID4C
Text: 6427525 N E C N E C ELECTRON ICS 98D INC ~Tñ ELECTRONI CS I NC 19047 D T~ J 9 - /f I F | b 4 2 7 S H S D D l ciD47 I jT PRELIMINARY S r E C i F i C A ' MOS JLj FIELD EFFECT IRAN' S 1S T - ELECTRON DEVICE _ 2 S FAST SWITCHING P-CHAXXEL
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OCR Scan
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bM27S55
0Qlcl047
2SJ136
IDCDO-12A
T-39-19
4E7525
J22S86
2SJ136
ID4C
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PDF
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La 7676
Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES
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2SB1475
2SB1475
IEI-1209)
La 7676
La 7676 data sheet
marking b42
TC-2353
transistor B42
B44 transistor
marking B44
marking B43 TRANSISTOR
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