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    ELECTROLYTIC CAPACITOR 25 VOLTS Search Results

    ELECTROLYTIC CAPACITOR 25 VOLTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    ELECTROLYTIC CAPACITOR 25 VOLTS Datasheets Context Search

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    capacitor 47uF electrolytic

    Abstract: 100uF electrolytic capacitor SD4600
    Text: SD4600 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . PRELIMINARY DATA GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. POUT = 60 W MIN. WITH 7.5 dB GAIN .438 x .450 2LFL M173 epoxy sealed ORDER CODE BRANDING SD4600 SD4600


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    PDF SD4600 SD4600 960MHz capacitor 47uF electrolytic 100uF electrolytic capacitor

    100uf electrolytic capacitor

    Abstract: VARIABLE capacitor Electrolytic Capacitor 100uF 25V 10K .5w potentiometer 100uf 25V Electrolytic Capacitor thomson capacitor SD4600 100uF 50 v electrolytic capacitor capacitor 47uF electrolytic 47uF ELECTROLYTIC CAPACITOR
    Text: SD4600 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . PRELIMINARY DATA GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. P OUT = 60 W MIN. WITH 7.5 dB GAIN .438 x .450 2LFL M173 epoxy sealed ORDER CODE BRANDING SD4600 SD4600


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    PDF SD4600 SD4600 960MHz 100uf electrolytic capacitor VARIABLE capacitor Electrolytic Capacitor 100uF 25V 10K .5w potentiometer 100uf 25V Electrolytic Capacitor thomson capacitor 100uF 50 v electrolytic capacitor capacitor 47uF electrolytic 47uF ELECTROLYTIC CAPACITOR

    960-1215 MHz transistor 20W

    Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
    Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.


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    PDF 0912LD20 0912LD20 20Wpk 960-1215 MHz transistor 20W CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v ADG419 capacitor 226 20V 47pf 55QT

    electrolytic capacitor 47uF

    Abstract: No abstract text available
    Text: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base


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    PDF SD4600 SD4600 960MHz electrolytic capacitor 47uF

    Untitled

    Abstract: No abstract text available
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


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    PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 250mA,

    electrolytic capacitor 470uF 63V

    Abstract: electrolytic capacitor, .1uF electrolytic capacitor 470uf L494 chip capacitor c06
    Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.


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    PDF 0912LD20 0912LD20 20Wpk electrolytic capacitor 470uF 63V electrolytic capacitor, .1uF electrolytic capacitor 470uf L494 chip capacitor c06

    FET J134

    Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


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    PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 20Network 250mA, FET J134 JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor

    Transistor J182

    Abstract: No abstract text available
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


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    PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 250mA, Transistor J182

    1030MHz-1090MHz

    Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


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    PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 20Network 250mA, 1030MHz-1090MHz capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V

    SD4600

    Abstract: a5058
    Text: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base


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    PDF SD4600 SD4600 960MHz a5058

    30pf variable capacitor

    Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


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    PDF MS4080 MS4080 180pF 100pF, 100pF 206nH 30pf variable capacitor VARIABLE capacitor arco 463 capacitor 10uF/63V 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor

    variable capacitor

    Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


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    PDF MS4280 MS4280 100pF 180pF 100pF, variable capacitor 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor

    30pf variable capacitor

    Abstract: variable capacitor arco 463 capacitor 10uF/63V 5 - 30pf variable capacitor 2943666661 capacitor variable Unelco Arco 422 10uf 63v capacitor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4040 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 5 WATTS 28 VOLTS 11 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


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    PDF MS4040 MS4040 180pF 100pF, 100pF 206nH 30pf variable capacitor variable capacitor arco 463 capacitor 10uF/63V 5 - 30pf variable capacitor 2943666661 capacitor variable Unelco Arco 422 10uf 63v capacitor

    philips type 3186 capacitor

    Abstract: 3186 cap
    Text: Aluminum Electrolytic Capacitors Performance Specifications 2. DC WORKING VOLTAGE The DC working voltage is the maximum permis­ sible operating voltage DC volts + peak ripple voltage for continuous operation at maximum rated temperature. 3. SURGE VOLTAGE


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    Untitled

    Abstract: No abstract text available
    Text: ñemeo ALUMINUM ELECTROLYTIC SURFACE MOUNT CAPACITORS Type CB 5°C FEATURES NMCOS009 • Low cost, high reliability surface mount construction • Life: 1000 hours at +85°C • Capacitance range: 0.1 nf to 220 ¿if • Voltage range: 4 volts to 50 volts •


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    PDF NMCOS009 F1995CB

    Untitled

    Abstract: No abstract text available
    Text: S G S - 1 H M S 0 N SD4600 IL iO T M I RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS PRELIMINARY DATA . • » . GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. ■ P o u t = 60 W MIN. WITH 7.5 d B GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base


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    PDF SD4600 SD4600 960MHz

    178 09T

    Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


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    PDF BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor

    rohm mtbf

    Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    PDF MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ

    capacitor mallory

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


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    PDF BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf

    l237

    Abstract: No abstract text available
    Text: f Z J SCS-THOMSON SD1658 *>7 #. GÄMIlUIOTMIKgi RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS • . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHED DESIGNED FOR HIGH POWER LINEAR OPERATION . HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION


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    PDF SD1658 SD1658 l237

    power tr unit j122 5 pin

    Abstract: power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


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    PDF BD135) BD136) GX-0300-55-22, MRF15090 power tr unit j122 5 pin power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170

    Untitled

    Abstract: No abstract text available
    Text: STANDARD TEST PROCEDURES Capacitance, Dissipation factor DF , ESR, and impedance (Z) shall be measured using the bridge method at a standard testing frequency of 120Hz, (±5Hz) 2.2 Volts DC maximum bias and < 1.0 VRMS @ 25°C, other frequencies may be specified for special


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    PDF 120Hz,

    DIODE ku 1490

    Abstract: capacitor mallory mallory 170
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The R F Line MRF15090 N P N Silico n RF Pow er T ran sistor Designed for 26 volts microwave large-signal, common emitter, class A and class A B linear amplifier applications in industrial and commercial FM/AM


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    PDF BD135) BD136) GX-0300-55-22, F15090 DIODE ku 1490 capacitor mallory mallory 170

    mallory 170

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    PDF MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170