SF00181
Abstract: 4Z145
Text: Philips Semiconductors FAST Products Product specification 8-input priority encoder 74F148 FEATURES PIN CONFIGURATION • Code conversions • Multi-channel D/A converter • Decimal-to-BCD converter • Cascading for priority encoding of “N” bits • Input enable capability
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74F148
74F148
500ns
SF00006
SF00181
4Z145
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PDF
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priority encoder
Abstract: 74F148 N74F148D N74F148N
Text: INTEGRATED CIRCUITS 74F148 8-input priority encoder Product specification IC15 Data Handbook Philips Semiconductors 1990 Mar 01 Philips Semiconductors Product specification 8-input priority encoder 74F148 FEATURES PIN CONFIGURATION • Code conversions • Multi-channel D/A converter
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Original
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74F148
priority encoder
74F148
N74F148D
N74F148N
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PDF
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240-PIN
Abstract: DDR2-667 PC2-5300 SN13 ps3109
Text: Product Specifications PART NO.: VL395T5160A-E6M REV: 1.1 General Information 4GB 512Mx72 DDR2 SDRAM ECC FULLY BUFFERED DIMM FBDIMM 240-PIN Description The VL395T5160A is a 512Mx72 DDR2 SDRAM high density Fully buffered DIMM (FBDIMM). This memory module
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Original
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VL395T5160A-E6M
512Mx72
240-PIN
VL395T5160A
256Mx4
240-pin
VN-281009
DDR2-667
PC2-5300
SN13
ps3109
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL395T5160A-E6M REV: 1.1 General Information 4GB 512Mx72 DDR2 SDRAM ECC FULLY BUFFERED DIMM FBDIMM 240-PIN Description The VL395T5160A is a 512Mx72 DDR2 SDRAM high density Fully buffered DIMM (FBDIMM). This memory module
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Original
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VL395T5160A-E6M
512Mx72
240-PIN
VL395T5160A
256Mx4
240-pin
VN-281009
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.2 VL395T2953-E6/D5 General Information 1GB 128Mx72 DDR2 SDRAM FULLY BUFFERED ECC 240 PIN DIMM FBDIMM Description: The VL395T2953 is a 128M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of eighteen CMOS 64MX8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages,
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Original
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VL395T2953-E6/D5
128Mx72
VL395T2953
64MX8
240-pin
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PDF
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Z87000
Abstract: Z87010 Z87L10 DSA0011674
Text: PRELIMINARY PRODUCT SPECIFICATION 2 Z87010/Z87L10 2 AUDIO ENCODER/DECODERS FEATURES • Direct Interface to 8-Bit µ-law Telephone CODEC ■ I/O Bus 16-Bit Tristable Data, 3-Bit Address ■ Wait State Generator ■ Two External Interrupts Hardware ■ Four Separate I/O Pins (2 Input, 2 Output)
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Original
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Z87010/Z87L10
16-Bit
Z87L10
Z87010
Z87000
44-Pin
Z87000
Z87010
Z87L10
DSA0011674
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PDF
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ddr2 667
Abstract: SA1137 trace code micron label MT9HTF12872F
Text: Preliminary‡ 240-Pin 512MB, 1GB DDR2 SDRAM FBDIMM SR, FB, x72 Features DDR2 SDRAM FBDIMM MT9HTF6472F – 512MB MT9HTF12872F – 1GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory
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Original
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240-Pin
512MB,
MT9HTF6472F
512MB
MT9HTF12872F
PC2-4200
PC2-5300
10-pair
14-pair
ddr2 667
SA1137
trace code micron label
MT9HTF12872F
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PDF
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EE 19 transformer
Abstract: EI 33 TRANSFORMER ee 13 transformer EE 19 Switching Transformer EI 33 SWITCHING TRANSFORMER EE 35 transformer EE 25 transformer transformer EI 33 transformer EE EE 55 TRANSFORMER
Text: ● Tr a n s f o r m e r ● Switching Transformer EE, EI type ◆Performance Output W F=100KMZ PINS DBES19S4 30 4✕4 DBES22S4 40 4✕4 DBEL22S5 60 5✕5 DBES28S5 80 5✕5 DBEL28S5 110 5✕5 DBES33S7 130 7✕7 DBES33S7A 130 7✕7 DBES40S8 160 8✕8 DBES44S8
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Original
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100KMZ
DBES19S4
DBES22S4
DBEL22S5
DBES28S5
DBEL28S5
DBES33S7
DBES33S7A
DBES40S8
DBES44S8
EE 19 transformer
EI 33 TRANSFORMER
ee 13 transformer
EE 19 Switching Transformer
EI 33 SWITCHING TRANSFORMER
EE 35 transformer
EE 25 transformer
transformer EI 33
transformer EE
EE 55 TRANSFORMER
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PDF
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AL sn11
Abstract: 240-PIN 64MX8 850C PC2-5300 samsung pc2-5300
Text: Product Specifications PART NO: REV: 1.2 VL395T2953-E6/D5 General Information 1GB 128Mx72 DDR2 SDRAM FULLY BUFFERED ECC 240 PIN DIMM FBDIMM Description: The VL395T2953 is a 128M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of eighteen CMOS 64MX8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages,
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Original
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VL395T2953-E6/D5
128Mx72
VL395T2953
64MX8
240-pin
AL sn11
850C
PC2-5300
samsung pc2-5300
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
667Mbps/533Mbps
M01E0107
E1009E20
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PDF
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DDR2-667
Abstract: EDE5108AJSE-6E-E EBE51FD8AJFT
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AJFT Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AJFT
512MB
240-pin
655-ball
75V/-0
667Mbps
M01E0107
E1087E20
DDR2-667
EDE5108AJSE-6E-E
EBE51FD8AJFT
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PDF
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PC2-4200
Abstract: EDE5108AGSE-6E-E DDR2-533 DDR2-667 EBE51FD8AGFD EBE51FD8AGFN
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AGFD EBE51FD8AGFN Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AGFD
EBE51FD8AGFN
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0869E30
PC2-4200
EDE5108AGSE-6E-E
DDR2-533
DDR2-667
EBE51FD8AGFD
EBE51FD8AGFN
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PDF
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DDR2-533
Abstract: DDR2-667
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E1009E30
DDR2-533
DDR2-667
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PDF
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PC2-5300J-555-10-C
Abstract: trace code micron label
Text: Preliminary‡ 240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT36HTS51272F – 4GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory module (FBDIMM) with ECC to detect and report
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Original
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240-Pin
MT36HTS51272F
PC2-4200
PC2-5300
10-pair
14-pair
09005aef822148b0/source:
09005aef82214898
HTS36C512x72F
PC2-5300J-555-10-C
trace code micron label
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PDF
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DDR2-667
Abstract: SS-921
Text: DATA SHEET 4GB Fully Buffered DIMM EBE42FE8ACWR Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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EBE42FE8ACWR
240-pin
655-ball
667Mbps
M01E0706
E1386E10
DDR2-667
SS-921
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PDF
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Z87000
Abstract: Z87010
Text: PRELIMINARY PRODUCT SPECIFICATION 1 Z87010 1 AUDIO ENCODER/DECODER FEATURES I/O Lines Package Information • I/O Bus 16-Bit Tristable Data, 3-Bit Address Device ROM (Kbyte) ■ Wait State Generator Z87010 4 16 44-Pin PLCC 44-Pin QFP ■ Two External Interrupts
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Original
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Z87010
16-Bit
44-Pin
EXT71
Z87000
Z87010
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 240-Pin 2GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT36HTF256F – 2GB For the latest data sheets and technical notes, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory
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Original
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240-Pin
MT36HTF256F
PC2-4200
PC2-5300
10-pair
14-pair
09005aef8221488a/Source:
09005aef82214866
HTF36C256x72F
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 4GB Fully Buffered DIMM EBE42FE8ACFR Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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EBE42FE8ACFR
240-pin
655-ball
667Mbps
M01E0706
E1328E20
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PDF
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SN5158
Abstract: No abstract text available
Text: DATA SHEET 1GB Fully Buffered DIMM EBE10FE8ACFR Specifications Features • Density: 1GB • Organization 128M words x 72 bits, 1 rank • Mounting 9 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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EBE10FE8ACFR
240-pin
655-ball
667Mbps
M01E0706
E1346E10
SN5158
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PDF
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PS3 power supply
Abstract: DDR2 qimonda
Text: STEC Part Number: INT72W4M256M8M-A03GZU 256M X 72 Bit 2GB 240-Pin DDR2 FB-DIMM ECC (PC2-5300) 2 Rank x 4; RoHS Compliant , Lead-Free GENERAL DESCRIPTION The INT72W4M256M8M-A03GZU is a 256M x 72 bit (2GB) 240-pin Double Data Rate 2 (DDR2) Fully-Buffered Dual Inline Memory Module (FB-DIMM) with ECC.
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Original
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INT72W4M256M8M-A03GZU
240-Pin
PC2-5300)
INT72W4M256M8M-A03GZU
PS3 power supply
DDR2 qimonda
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AJFT Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AJFT
512MB
240-pin
655-ball
75V/-0
667Mbps
8192gy
M01E0706
E1087E30
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PDF
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ic 74 138 DECODER
Abstract: 74LS138P 74LS138PC
Text: NATIONAL SEHICOND -CLOGIO 02E » | bS01122 0Db^ ^ J j D^ D IA G R A M P IN O U T A T- 66-21-55 54S/74S138 54LS/74LS138 Ao T l i l Vcc 1-OF-8 DECO DER/DEM ULTIPLEXER Al [ 7 H JO o A2 [ 7 Ei [T 13]S2 rad jJJ03 T7|04 33 os E3[6 ö?|T T ]0 6 g n d (7 D E S C R I P T IO N — T he ’ 138 is a high speed 1-of-8 decoder/dem ultiplexer.
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OCR Scan
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bS01122
54S/74S138
54LS/74LS138
1-6f-24
1-of-32
54/74S
54/74LS
ic 74 138 DECODER
74LS138P
74LS138PC
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PDF
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Untitled
Abstract: No abstract text available
Text: M aiey w tK : SLW a NO. PINS PER ROW D O’i B B Ul W PLATING OPTION P i ROW OPTION Specifications: SLW Same as CES Series except: Contact Material: Phosphor Bronze Insertion Depth: 2.16mm .085" to (2,92mm) . ’ '5 " Insertion Force: (3.34N) 12oi avg (0,64mm) .025" SQ pin
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OCR Scan
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800-SAMTEC-9
10i8141
37T65-0-
rO-8141
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PDF
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Untitled
Abstract: No abstract text available
Text: !i Dimension and pin-connection Top view display side | | Emitting Colour Tvnp V a k n m Material i FOUR DIGIT CLOCK DISPLAYS -6 .2 mm Lumi ro u s Intensity (/f= = 10 mA) ucd min. ' max. Description C A 2 5 -1 1 HW A Common Anode 240 900 C C 2 5 -1 1 HW A
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OCR Scan
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PDF
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