Bb515
Abstract: bf999
Text: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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Original
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VPS05161
OT-23
EHT07315
EHT07316
BB515
EHM07024
Oct-26-1999
Bb515
bf999
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PDF
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BF999
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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Original
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BF999
VPS05161
Nov-08-2002
BF99cal
BF999
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PDF
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bb515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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Original
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Jun-28-2001
bb515
BF999
|
PDF
|
BB515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
|
Original
|
BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Nov-08-2002
BB515
BF999
|
PDF
|