Untitled
Abstract: No abstract text available
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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PDF
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BF543
VPS05161
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BF 22 W
Abstract: No abstract text available
Text: BF 543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration
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Original
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PDF
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VPS05161
OT-23
Dec-13-1999
EHT07033
EHT07034
BF 22 W
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BF543
Abstract: triode sot23
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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Original
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PDF
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BF543
VPS05161
Jun-28-2001
EHT07033
EHT07034
BF543
triode sot23
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marking code 11s
Abstract: MARKING CODE 21S BF543
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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Original
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PDF
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BF543
VPS05161
marking code 11s
MARKING CODE 21S
BF543
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1372
OT-23
EHT07032
300MHz
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