BFR193L3
Abstract: BFR340L3 marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
BFR193L3
BFR340L3
marking FA
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Infineon Technologies transistor 4 ghz
Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR340L3
Infineon Technologies transistor 4 ghz
BFR193L3
BFR340L3
BFR34* transistor
marking FA
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BFR360L3
Abstract: No abstract text available
Text: BFR360L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360L3
EHA07536
Jul-01-2003
BFR360L3
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transistor k 4213
Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
VPS05996
EHA07536
Jul-01-2003
transistor k 4213
BFR340T
transitor RF 98
SC75
BFR34* transistor
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marking FA
Abstract: BFR340T
Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
marking FA
BFR340T
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Untitled
Abstract: No abstract text available
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR360L3
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Untitled
Abstract: No abstract text available
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR360L3
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Untitled
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR380L3
EHA07536
Jan-24-2003
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MJE 131
Abstract: BFR340L3
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
EHA07536
Dec-17-2001
MJE 131
BFR340L3
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C5 MARKING TRANSISTOR
Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)
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BFR380L3
C5 MARKING TRANSISTOR
infineon marking code L1
Infineon Technologies transistor 4 ghz
BFR193L3
BFR380L3
INFINEON transistor marking
MARKING CODE 21E
infineon marking code L2
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RCs INFINEON
Abstract: No abstract text available
Text: BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFR193F
RCs INFINEON
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3904 ic
Abstract: 3904 NPN k 4213 transistor k 4213 BFR340L3
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
EHA07536
Jun-16-2003
3904 ic
3904 NPN
k 4213
transistor k 4213
BFR340L3
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BFR360L3
Abstract: No abstract text available
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR360L3
Jul-07-2004
BFR360L3
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K 3677
Abstract: No abstract text available
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR340T
VPS05996
K 3677
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Untitled
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR380L3
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K 3677
Abstract: marking FA
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR340L3
K 3677
marking FA
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Infineon Technologies transistor 4 ghz
Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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PDF
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BFR193L3
Infineon Technologies transistor 4 ghz
BFR193L3
infineon marking code L2
1B marking transistor
INFINEON transistor marking
C5 MARKING TRANSISTOR
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TRANSISTOR MARKING NK
Abstract: transistor bf 271 p 605 transistor equivalent BFR340T
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR340T
VPS05996
EHA07536
Jan-29-2002
TRANSISTOR MARKING NK
transistor bf 271
p 605 transistor equivalent
BFR340T
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Untitled
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR380L3
EHA07536
Jan-29-2002
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marking FA
Abstract: No abstract text available
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR340L3
marking FA
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BFR360L3
Abstract: BFR193L3
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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Original
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PDF
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BFR360L3
BFR360L3
BFR193L3
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infineon marking L2
Abstract: BFR193L3
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR193L3
infineon marking L2
BFR193L3
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BFR193L3
Abstract: BFR380L3 marking FC
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
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Original
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PDF
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BFR380L3
BFR193L3
BFR380L3
marking FC
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marking FC
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR380L3
marking FC
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