EGP30
Abstract: No abstract text available
Text: EGP30AH THRU EGP30MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T T PPAA Forward Current - 3.0 Amperes DO-201AD FEATURES * Halogen-free type 1.0 25.4 MIN. 0.220(5.3) 0.190(4.8) DIA. * Lead free product, compliance to RoHs
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EGP30AH
EGP30MH
DO-201AD
EGP30JH
EGP30GH
EGP30DH
EGP30
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Untitled
Abstract: No abstract text available
Text: EGP30AH THRU EGP30MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T T PPAA Forward Current - 3.0 Amperes DO-201AD FEATURES * Halogen-free type 1.0 25.4 MIN. 0.220(5.3) 0.190(4.8) DIA. * Lead free product, compliance to RoHS
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EGP30AH
EGP30MH
DO-201AD
EGP30JH
EGP30GH
EGP30DH
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Untitled
Abstract: No abstract text available
Text: EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction
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EGP30A,
EGP30B,
EGP30C,
EGP30D,
EGP30F,
EGP30G
22-B106
AEC-Q101
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop
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EGP30A
EGP30G
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: EGP30AH THRU EGP30MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T T PPAA Forward Current - 3.0 Amperes DO-201AD FEATURES *�Halogen-free type 1.0 25.4 MIN. 0.220(5.3) 0.190(4.8) DIA. * Compliance to RoHS product
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EGP30AH
EGP30MH
DO-201AD
EGP30JH
EGP30GH
EGP30DH
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Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-0809
Schottky Diode 039 B34
S4 84a DIODE schottky
MELF ZENER DIODE color bands blue
diode RGP 15J
sb050 d 331
s104 diode 87a
252 B34 SMD ZENER DIODE
SB050 transistor equivalent
MELF DIODE color bands
smd transistor P2D
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Untitled
Abstract: No abstract text available
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop
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EGP30A
EGP30G
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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EGP30A
Abstract: EGP30B EGP30G GP20 J-STD-002
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency
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EGP30A
EGP30G
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
EGP30B
EGP30G
GP20
J-STD-002
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EGP30A
Abstract: EGP30B EGP30G GP20 JESD22-B102D J-STD-002B EGP30D
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by
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EGP30A
EGP30G
2002/95/EC
2002/96/EC
08-Apr-05
EGP30B
EGP30G
GP20
JESD22-B102D
J-STD-002B
EGP30D
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EGP30A
Abstract: EGP30B EGP30G GP20 J-STD-002
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop
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EGP30A
EGP30G
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
EGP30B
EGP30G
GP20
J-STD-002
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EGP30A
Abstract: No abstract text available
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency
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Original
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EGP30A
EGP30G
2002/95/EC
2002/96/EC
08-Apr-05
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EGP30A
Abstract: EGP30B EGP30G GP20 JESD22-B102 J-STD-002
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency
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EGP30A
EGP30G
2002/95/EC
2002/96/EC
18-Jul-08
EGP30B
EGP30G
GP20
JESD22-B102
J-STD-002
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