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    TGA1055

    Abstract: TGA1055-EPU ultrasonics circuits diagram
    Text: Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance • • • • • • TGA1055-EPU Primary Applications 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm


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    TGA1055-EPU EG1055B 29GHz 12per 0007-inch TGA1055 TGA1055-EPU ultrasonics circuits diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: TrìQuint SEMICONDUCTOR Advance Product Information Ka Band Power Amplifier TGA1055-EPU Key Features and Performance Primary Applications 0.25um pHEMT Technology LMDS 26.5 - 29 GHz Frequency Range 2W Nominal Pout at 29 GHz Point-to-Point Radio 20 Nominal Gain


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    TGA1055-EPU EG1055B 29GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information SEMICONDUCTOR* Ka Band 2 Watt Power Amplifier Key Features and Performance TGA1055-EPU Primary Applications 0.25um pHEMT Technology LMDS 27 - 29 GHz Frequency Range 2W Nominal Pout at 28 GHz Point-to-Point Radio 20 Nominal Gain


    OCR Scan
    TGA1055-EPU EG1055B 29GHz 0007-inch PDF

    Untitled

    Abstract: No abstract text available
    Text: TriQuint % Advance Product Information &EM fW N D U m M * Ka Band 2 Watt Power Amplifier Key Features and Performance TGA1055-EPU Primary Applications 0.25 um pHEMT Technology LMDS 20 dB Nominal Gain 2W Nominal Pout Point-to-Point Radio -30 dBc IMR3 @ 26 dBm SCL


    OCR Scan
    TGA1055-EPU EG1055B 29GHz 0007-inch PDF