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    EFFECT HALL USE SWITCH Search Results

    EFFECT HALL USE SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    EFFECT HALL USE SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bosch wheel speed sensor

    Abstract: Bosch 928000453 wheel speed sensor bosch 928000453 wheel speed bosch A 928000453
    Text: SNDH-H Series Hall-Effect Speed Sensors DESCRIPTION The SNDH-H Series Hall-Effect Speed Sensors use a magnetically biased Hall-effect integrated circuit to accurately sense movement of ferrous metal targets. The specially designed IC integrated circuit and a permanent magnet are


    Original     		PDF 005933-2-EN bosch wheel speed sensor Bosch 928000453 wheel speed sensor bosch 928000453 wheel speed bosch A 928000453

    Untitled

    Abstract: No abstract text available
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description Two matched Hall effect switches on a single substrate 1 mm Hall element spacing Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


    Original     		PDF A1230 A1230

    XH018

    Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
    Text: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.


    Original     		PDF XH018 hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor

    A1230

    Abstract: IPC7351 SOIC127P600X175-8M BURR
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


    Original     		PDF A1230 A1230 IPC7351 SOIC127P600X175-8M BURR

    A1230LLTR-T

    Abstract: A1230 2A1230
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


    Original     		PDF A1230 A1230LLTR-T 2A1230

    A1230

    Abstract: A1230LK-T SOIC127P600X allegro 80 L
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


    Original     		PDF A1230 A1230LK-T SOIC127P600X allegro 80 L

    A1230

    Abstract: A-1230 IPC7351 SOIC127P600X175-8M A1230LK-T
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


    Original     		PDF A1230 A1230 A-1230 IPC7351 SOIC127P600X175-8M A1230LK-T

    A1230

    Abstract: No abstract text available
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


    Original     		PDF A1230

    Untitled

    Abstract: No abstract text available
    Text: Magnetic Proximity Sensors Hall Effect MP1014 Sensors Digital Hall-effect position sensor in low-profile flange-mount housing Description The MP1 Series sensors are one-piece non-contact solid-state position sensors. The sensors operate through the use of Hall


    Original     		PDF MP1014 MP101401 MP101402*

    Untitled

    Abstract: No abstract text available
    Text: Magnetic Proximity Sensors Hall Effect MP1021 Sensors Digital Hall-effect position sensor in low-profile flange-mount housing Description The MP1 Series sensors are one-piece non-contact solid-state position sensors. The sensors operate through the use of Hall


    Original     		PDF MP1021

    Untitled

    Abstract: No abstract text available
    Text: Magnetic Proximity Sensors Hall Effect MP1013 Sensors Hall-effect position sensor with convenient snap-fit mounting Description The MP1 Series sensors are one-piece non-contact solid-state position sensors. The sensors operate through the use of Hall Effect technology with magnetic fields generated by permanent magnets. They provide a sinking current output.


    Original     		PDF MP1013

    hall effect sensor 3144

    Abstract: hall effect sensor application note 3144
    Text: 3161 HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a


    Original     		PDF A3161ELT A3161EUA hall effect sensor 3144 hall effect sensor application note 3144

    hall effect sensor 720

    Abstract: TPUPN10 M111 Motorola hall
    Text: Order this document by TPUPN10/D MOTOROLA SEMICONDUCTOR PROGRAMMING NOTE Hall Effect Decode TPU Function HALLD by Jeff Wright 1 Functional Overview The Hall effect decode function is a TPU input function that uses two or three channels to decode signals from Hall effect sensors into a state number. The function is designed primarily for use with the


    Original     		PDF TPUPN10/D hall effect sensor 720 TPUPN10 M111 Motorola hall

    M111

    Abstract: Motorola hall
    Text: MOTOROLA SEMICONDUCTOR PROGRAMMING NOTE Hall Effect Decode TPU Function HALLD By Jeff Wright TPUPN10/D Order this document by TPUPN10/D MOTOROLA SEMICONDUCTOR PROGRAMMING NOTE Hall Effect Decode TPU Function (HALLD) by Jeff Wright 1 Functional Overview The Hall effect decode function is a TPU input function that uses two or three channels to decode signals from Hall effect sensors into a state number. The function is designed primarily for use with the


    Original     		PDF TPUPN10/D M111 Motorola hall

    AH920

    Abstract: BCD Semiconductor voltage regulator mar 920
    Text: Preliminary Datasheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH General Description Features The AH920 is a Hall-effect latch designed in mixed signal CMOS technology. It is quite suitable for use in automotive, industrial and consumer applications. • •


    Original     		PDF AH920 AH920 BCD Semiconductor voltage regulator mar 920

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH General Description Features The AH920 is a Hall-effect latch designed in mixed signal CMOS technology. It is quite suitable for use in automotive, industrial and consumer applications. • •


    Original     		PDF AH920 AH920

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HIGH SENSITIVITY CMOS HALL-EFFECT LATCH General Description Features The AH921 is a Hall-effect latch designed in mixed signal CMOS technology. It is quite suitable for use in automotive, industrial and consumer applications. • •


    Original     		PDF AH921 O-92S-3

    Linear

    Abstract: No abstract text available
    Text: TSH481 Ratio-metric Linear Hall Effect Switch TO-92S Pin Definition: 1. VCC 2. GND 3. Output Description TSH481 is a linear Hall-effect sensor which is composed of Hall sensor, linear amplifier and Totem-Pole output stage. It features low noise output, which makes it unnecessary to use external filtering. It also can provide


    Original     		PDF TSH481 O-92S TSH481 Linear

    gaussmeter probe

    Abstract: PSRI STB1X-0201 gaussmeter hall effect 5vdc
    Text: 5100 Series Hall Effect Gauss / Tesla Meters The 5100 Series Hall effect portable gaussmeters represent the most recent design from the world leader in magnetic measuring equipment. This new design incorporates the use of digital signal processing technology


    Original     		PDF w/5170) STB1X-0201 MOS51-3204 YA-111 110VAC 220VAC gaussmeter probe PSRI gaussmeter hall effect 5vdc

    hall effect sensor ugn 3019

    Abstract: Diode LT 442 Diode LT 404
    Text: Data Sheet 27621.30A§ 3161 HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple


    Original     		PDF A3161ELT A3161EUA hall effect sensor ugn 3019 Diode LT 442 Diode LT 404

    hall effect sensor application note 3144

    Abstract: A3161ELT A3161EUA GH-068 hall effect sensor 3144
    Text: Data Sheet 27621.30A‡ 3161 HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple


    Original     		PDF A3161ELT A3161EUA OT-89/TO-243AA hall effect sensor application note 3144 GH-068 hall effect sensor 3144

    hall effect sensor application note 3144

    Abstract: MH-014D 3144 hall effect 27701 3161 A3161ELT A3161EUA GH-068 s5140 hall effect sensor 3144
    Text: Data Sheet 27621.30A† 3161 HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple


    Original     		PDF A3161ELT A3161EUA OT-89/TO-243AA hall effect sensor application note 3144 MH-014D 3144 hall effect 27701 3161 GH-068 s5140 hall effect sensor 3144

    hall effect sensor application note 3144

    Abstract: sot89 UW GH-068 A3161ELT A3161EUA hall effect sensor 3144
    Text: Data Sheet 27621.30A‡ 3161 HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple


    Original     		PDF A3161ELT A3161EUA OT-89/TO-243AA hall effect sensor application note 3144 sot89 UW GH-068 hall effect sensor 3144

    Diode LT 410

    Abstract: lt 719 hall effect sensor ugn 3019 GH-068 A3161ELT A3161EUA 0118A Diode LT 404
    Text: Data Sheet 27621.30B 3161 HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple


    Original     		PDF A3161ELT A3161EUA OT-89/TO-243AA A3361E A3362E Diode LT 410 lt 719 hall effect sensor ugn 3019 GH-068 0118A Diode LT 404