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    EFA120BV Search Results

    EFA120BV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EFA120BV Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF

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    ta 8659 anG

    Abstract: EFA120B EFA120BV TA 8659
    Text: Excelics EFA120B/EFA120BV DATA SHEET Low Distortion GaAs Power FET 550 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA120B/EFA120BV EFA120B EFA120BV 12GHz EFA120B EFA120BV ta 8659 anG TA 8659

    ta 8659 anG

    Abstract: EFA120B EFA120BV
    Text: EFA120B/EFA120BV Low Distortion GaAs Power FET 550 FEATURES 50 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA120B/EFA120BV EFA120B EFA120BV 12GHz EFA120BV) EFA120B ta 8659 anG

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF