NROM16EE
Abstract: No abstract text available
Text: NROM16EE SAIFUN PROPRIETARY 16Mbit 2M x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM16EE is a 16Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is
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NROM16EE
16Mbit
NROM16EE
16Mbits
128-byte
111-1111-11H1-XXXX-XXXX
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M25PE16
Abstract: M25PXX SO8 Wide Package SO8W STMicroelectronics date code PDIP8 TSSOP8 Package 160 SPI STM pdip8 SO8 package SO8 WIDE
Text: Serial EEPROM, Serial Flash and Application Specific Serial Non-Volatile Memories www.st.com/eeprom www.st.com/serialflash Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Serial Serial EEPROM, EEPROM, Serial Serial Flash Flash and
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SGEEFLASH/0902
M25PE16
M25PXX
SO8 Wide Package
SO8W
STMicroelectronics date code PDIP8
TSSOP8 Package
160 SPI STM
pdip8
SO8 package
SO8 WIDE
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Hitachi 1024k*8 SRAM
Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Text: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8
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HN58X2464I
64kbit
400kHz
HN58X2432I
32kbit
HN58X2416I
16kbit
HN58X2408I
Hitachi 1024k*8 SRAM
HB28B128C8C
HB28B512C8C
CSP72
NVM1GBYTE
CSP-72
512kx8 sram dip
HN58X2402SI
HN58X2404SI
HN58X2408I
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93CS56
Abstract: 10B5 9060ES 9060SD 93C06 NM93CS06 NM93CS46 FF000000
Text: EEPROM Load Instructions for PCI 9060, PCI 9060ES, PCI 9060SD July 11, 1996 These Instructions apply to the PCI 9060, 9060ES and 9060SD SHORT EEPROM LOAD The following registers are loaded from EEPROM after reset is de-asserted if the SHORT# pin is low. The bits are organized such that the most significant bit of each 32-bit word is stored first in EEPROM. The first
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9060ES,
9060SD
9060ES
32-bit
NM93CS06
93C06
93CS56
10B5
9060SD
NM93CS46
FF000000
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EEPROM 16Mb
Abstract: M25PXX SO8w footprint M34A02 M34C00 M34C02 M34D64 TSSOP14 1mb eeprom hdd eeprom
Text: Serial Flash, Serial EEPROM and Application Specific Standard Products for Computer Applications www.st.com/serialflash www.st.com/eeprom STM i c r o e l e c t r o n i c s More Intelligent Solutions Serial Flash, Serial EEPROM and ASSP for Computer Applications
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FLSERFLASH/0602
EEPROM 16Mb
M25PXX
SO8w footprint
M34A02
M34C00
M34C02
M34D64
TSSOP14
1mb eeprom
hdd eeprom
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93CS56
Abstract: EEPROM E 32.0000 C 9060SD 93C06 NM93CS06 NM93CS46 10B5 9060ES 93CS56 14 pin
Text: Go to next Section: Programming Flowchart Return to Table of Contents EEPROM Load Instructions for PCI 9060, PCI 9060ES, PCI 9060SD July 11, 1996 These Instructions apply to the PCI 9060, 9060ES and 9060SD SHORT EEPROM LOAD The following registers are loaded from EEPROM after reset is de-asserted if the SHORT# pin is low.
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9060ES,
9060SD
9060ES
32-bit
NM93CS06
93C06
93CS56
EEPROM
E 32.0000 C
9060SD
NM93CS46
10B5
93CS56 14 pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as
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TC5816ADC
16Mbit
TC5816
NV16030496
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S016W
Abstract: stmicroelectronics eeprom M25P05-A m93c46 M24C64-W M95010 M95010-W M95020 bare die M24C02-W
Text: Serial EEPROM and Serial Flash for automotive applications ORDER CODE: SGSERAUT/0504 Selection guide STMicroelectronics - August 2004 - Printed in Italy - All rights reserved www.st.com/eeprom www.st.com/serialflash For selected STMicroelectronics sales offices fax:
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SGSERAUT/0504
S016W
stmicroelectronics eeprom
M25P05-A
m93c46
M24C64-W
M95010
M95010-W
M95020
bare die
M24C02-W
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USIM
Abstract: multi sim cards AE45C1 AE46C
Text: AE46C and AE45C1 High Security 16-bit Smart Card Microcontroller Features AE46C AE45C1 68kbytes EEPROM; 196kbytes ROM; 6.5Kbyte RAM 36kbytes EEPROM; 196kbytes ROM; 6.5Kbyte RAM Integrated Security Concept ISC Applications The AE46C and AE45C1 designed under Renesas
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AE46C
AE45C1
16-bit
AE46C
68kbytes
196kbytes
36kbytes
USIM
multi sim cards
AE45C1
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AE45C1
Abstract: AE46C
Text: AE46C and AE45C1 High Security 16-bit Smart Card Microcontroller Features AE46C AE45C1 68Kbytes EEPROM; 196Kbytes ROM; 6.5Kbytes RAM 36Kbytes EEPROM; 196Kbytes ROM; 6.5Kbytes RAM Integrated Security Concept ISC Applications The AE46C and AE45C1 designed under Renesas
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AE46C
AE45C1
16-bit
AE46C
68Kbytes
196Kbytes
36Kbytes
AE45C1
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Sim card diagram
Abstract: AE450 AE460 gsm sim
Text: AE460 and AE450 High Security 16-bit Smart Card Microcontroller Features AE460 AE450 64.5Kbytes EEPROM; 96Kbytes ROM; 3Kbytes RAM 32.5Kbytes EEPROM; 128Kbytes ROM; 4Kbytes RAM Integrated Security Concept ISC The AE460 and AE450 are designed for high security
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AE460
AE450
16-bit
AE460
96Kbytes
128Kbytes
AE450
Sim card diagram
gsm sim
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renesas sim
Abstract: Sim card diagram AE450 AE460 sim card chip sim cards RENESAS AE4
Text: AE460 and AE450 High Security 16-bit Smart Card Microcontroller Features AE460 AE450 64.5kbytes EEPROM; 96kbytes ROM; 3Kbyte RAM 32.5kbytes EEPROM; 128kbytes ROM; 4Kbyte RAM Integrated Security Concept ISC The AE460 and AE450 are designed for high security
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AE460
AE450
16-bit
AE460
96kbytes
128kbytes
AE450
renesas sim
Sim card diagram
sim card chip
sim cards
RENESAS AE4
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sim card chips
Abstract: AE450 cmos cots radiation gsm module with microcontroller AE460 sim cards Hitachi DSA0071
Text: AE460 and AE450 High Security 16-bit Smart Card Microcontroller Features AE460 AE450 64.5kbytes EEPROM; 96kbytes ROM; 3kbytes RAM 32.5kbytes EEPROM; 128kbytes ROM; 4kbytes RAM Integrated Security Concept ISC Applications The AE460 and AE450 are designed for high security
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AE460
AE450
16-bit
AE460
96kbytes
128kbytes
AE450
sim card chips
cmos cots radiation
gsm module with microcontroller
sim cards
Hitachi DSA0071
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PIC16F877
Abstract: 24L256 DV164002 24l256 serial eeprom LCD using pic16f877 16 X 2 lcd PIC16F877 rs232 PIC16F877 circuits DM163004 PIC18C452
Text: PICDEM.net Internet/Ethernet Demonstration Board DM163004 Features: • User friendly TCP/IP stack • Web server with HTML • 24L256 Serial EEPROM • Firmware for Xmodem to download web pages into Serial EEPROM • ICSP™/ICD interface connector •
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DM163004
24L256
RS-232
PIC16F877
40-pin
PIC18C452.
DS51240A
DS51240A*
DV164002
24l256 serial eeprom
LCD using pic16f877
16 X 2 lcd
PIC16F877 rs232
PIC16F877 circuits
DM163004
PIC18C452
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TC5816AFT
Abstract: No abstract text available
Text: TOSHIBA TC 5816A D C 16Mbit 2M X 8 BIT CMOS NAND EEPROM PRELIMINARY Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programma ble Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a
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16Mbit
TC5816
TC5816AFT
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MX29L1611
Abstract: No abstract text available
Text: Introduction PRELIMINARY MX29L1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 50ns
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MX29L1611
16M-BIT
100ns
200ms
MX29L1611
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MX29F1610
Abstract: 29F1610-12 00F1H
Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture
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MX29F1610
16M-BIT
120/150ns
150ms
MX29F1610
29F1610-12
00F1H
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
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MX29F1615
16M-BIT
90/100/120ns
P14-17
MAY/05/1999
OCT/01/1999
NOV/03/1999
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vhdl code for DES algorithm
Abstract: AES-128 ST22 ST22N256 vhdl AES 512 algorithm vhdl code for AES algorithm vhdl code 16 bit processor
Text: ST22N256 Smartcard 32-Bit RISC MCU with 256 Kbytes EEPROM Javacard HW Execution & Cryptographic Library DATA BRIEF PRODUCT FEATURES 32-BIT RISC CPU WITH 24-BIT LINEAR MEMORY ADDRESSING • 368 KBYTES USER ROM ■ 16 KBYTES USER RAM ■ 256K KBYTES USER EEPROM
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ST22N256
32-Bit
24-BIT
vhdl code for DES algorithm
AES-128
ST22
ST22N256
vhdl AES 512 algorithm
vhdl code for AES algorithm
vhdl code 16 bit processor
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29f1615
Abstract: MX29f1615 29f1615-10
Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
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MX29F1615
16M-BIT
90/100/120ns
JUN/15/2001
NOV/21/2002
29f1615
MX29f1615
29f1615-10
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29F1615
Abstract: mx29f1615
Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
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MX29F1615
16M-BIT
90/100/120ns
compatibl23
42-PIN
PM0615
29F1615
mx29f1615
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29f1615
Abstract: MX29f1615
Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
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MX29F1615
16M-BIT
90/100/120ns
PM0615
JUN/15/2001
29f1615
MX29f1615
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TC5816AFT
Abstract: toshiba NAND ID code d33 02C
Text: TOSHIBA TC 5816A FT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC 5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register
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16Mbit
RCn724fl
NV16010196
TC5816AFT
TSOP44-P-400B
TC5816AFT
toshiba NAND ID code
d33 02C
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MX29F1610A
Abstract: MX29F1610B PM05
Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture
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MX29F1610A/B
16M-BIT
70/90/120ns
MX29F1610A
MX29F1610B
PM05
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