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    EDO CORPORATION Search Results

    EDO CORPORATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    EDO CORPORATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P

    IBM0144051M

    Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
    Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014445 IBM014445B 1M x 4 10/10 QUAD CAS EDO DRAM Features • Standard Power • Low Power Dissipation


    Original     		PDF IBM0144051M IBM014405P1M IBM014405M1M IBM014405B1M IBM014445 IBM014445B

    lp 1610

    Abstract: IBM01181651M IBM0118165B1M IBM0118165M1M IBM0118165P1M
    Text: IBM01181651M x 1610/10, 5.0V, EDO. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SR. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SR. IBM0118165B1M x 1610/10, 3.3V, EDO. IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization


    Original     		PDF IBM01181651M IBM0118165P1M IBM0118165M1M IBM0118165B1M IBM0118165 IBM0118165M IBM0118165B IBM0118165P lp 1610

    4221 transistor datasheet

    Abstract: IBM01178052M IBM0117805B2M IBM0117805M2M IBM0117805P2M
    Text: IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization


    Original     		PDF IBM01178052M IBM0117805P2M IBM0117805M2M IBM0117805B2M IBM0117805 IBM0117805M IBM0117805B IBM0117805P 4221 transistor datasheet

    IBM01161651M

    Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
    Text: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization


    Original     		PDF IBM01161651M IBM0116165P1M IBM0116165M1M IBM0116165B1M IBM0116165 IBM0116165M IBM0116165B IBM0116165P

    IBM01174054M

    Abstract: IBM0117405B4M IBM0117405M4M IBM0117405P4M
    Text: IBM01174054M x 411/11, 5.0V, EDO. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SR. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SR. IBM0117405B4M x 411/11, 3.3V, EDO. IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01174054M IBM0117405P4M IBM0117405M4M IBM0117405B4M IBM0117405 IBM0117405M IBM0117405B IBM0117405P

    IBM01178052M

    Abstract: IBM0117805B2M IBM0117805M2M IBM0117805P2M
    Text: IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization


    Original     		PDF IBM01178052M IBM0117805P2M IBM0117805M2M IBM0117805B2M IBM0117805 IBM0117805M IBM0117805B IBM0117805P

    IBM0144051M

    Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
    Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405B 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max


    Original     		PDF IBM0144051M IBM014405P1M IBM014405M1M IBM014405B1M IBM014405 IBM014405B

    IBM01161651M

    Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
    Text: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization


    Original     		PDF IBM01161651M IBM0116165P1M IBM0116165M1M IBM0116165B1M IBM0116165 IBM0116165M IBM0116165B IBM0116165P

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M ibm0116
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P ibm0116

    IBM01174054M

    Abstract: IBM0117405B4M IBM0117405M4M IBM0117405P4M
    Text: IBM01174054M x 411/11, 5.0V, EDO. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SR. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SR. IBM0117405B4M x 411/11, 3.3V, EDO. IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		PDF IBM01174054M IBM0117405P4M IBM0117405M4M IBM0117405B4M IBM0117405 IBM0117405M IBM0117405B IBM0117405P

    din 4232

    Abstract: IBM014405P1M IBM0144051M IBM014405B1M IBM014405M1M
    Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405M IBM014405B IBM014405P 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization


    Original     		PDF IBM0144051M IBM014405P1M IBM014405M1M IBM014405B1M IBM014405 IBM014405M IBM014405B IBM014405P din 4232

    IBM0144051M

    Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
    Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. Preliminary IBM014445 IBM014445M IBM014445B IBM014445P 1M x 4 10/10 QUAD CAS EDO DRAM Features • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V


    Original     		PDF IBM0144051M IBM014405P1M IBM014405M1M IBM014405B1M IBM014445 IBM014445M IBM014445B IBM014445P

    MT41LC256K32D4

    Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
    Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏


    Original     		PDF

    IBM0165405B16M

    Abstract: IBM0165405BJ3C-50 IBM0165405BJ3C-60 IBM0165405P16M TSOP-32
    Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0165405B16M IBM0165405P16M IBM0165405B IBM0165405P 104ns SA14-4238-02 IBM0165405BJ3C-50 IBM0165405BJ3C-60 TSOP-32

    IBM0164405B16M

    Abstract: IBM0164405BJ3C-50 IBM0164405BJ3C-60 IBM0164405P16M TSOP-32 SA14-4237-02
    Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0164405B16M IBM0164405P16M IBM0164405B IBM0164405P 104ns IBM0164405BJ3C-50 IBM0164405BJ3C-60 TSOP-32 SA14-4237-02

    IBM0164165B4M

    Abstract: IBM0164165P4M TSOP-54
    Text: IBM0164165B4M x 1613/9, 3.3V, EDO. IBM0164165P4M x 1613/9, 3.3V, LP, SR, EDO. IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0164165B4M IBM0164165P4M IBM0164165B IBM0164165P 104ns 128ms TSOP-54

    IBM0165165P4M

    Abstract: TSOP-54 IBM0165165B4M 500MIL
    Text: IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0165165B4M IBM0165165P4M IBM0165165B IBM0165165P 104ns TSOP-54 500MIL

    jedec ms-024

    Abstract: IBM0165805B8M IBM0165805BJ3C-50 IBM0165805BJ3C-60 IBM0165805P8M TSOP-32
    Text: IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM ADVANCED Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0165805B8M IBM0165805P8M IBM0165805B IBM0165805P 104ns SA14-4241-02 jedec ms-024 IBM0165805BJ3C-50 IBM0165805BJ3C-60 TSOP-32

    ms-024

    Abstract: IBM0165165B4M IBM0165165P4M
    Text: IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM ADVANCED Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0165165B4M IBM0165165P4M IBM0165165B IBM0165165P 104ns SA14-4239-02 ms-024

    IBM0165165B4M

    Abstract: IBM0165165P4M TSOP-54
    Text: IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0165165B4M IBM0165165P4M IBM0165165B IBM0165165P 104ns TSOP-54

    IBM0165165B

    Abstract: IBM0165165P4M IBM0165165B4M 88H2011
    Text: Discontinued 8/98 - last order; 12/98 last ship IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write


    Original     		PDF IBM0165165B4M IBM0165165P4M IBM0165165B IBM0165165P 104ns 20nnformation IBM0165165B 88H2011

    4217405

    Abstract: 4217405-60 IR35-207 IR35207
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The µPD42S17405, 4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


    Original     		PDF PD42S17405, PD42S17405 26-pin PD42S17405-50, 4217405 4217405-60 IR35-207 IR35207