Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C
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DMP10H400SK3
ZXMP10A17K
AEC-Q101
-100V
O252-3L
DS32028
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marking cj4
Abstract: s6 smc schottky marking code s4 SMc S4 SMB MARKING CODE S1M SMA SJ SMB marking SS24 SMC MARKING SJ marking ED smb SS16 SMB
Text: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 40A, 50A OR 100A • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS
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ED 69 SOD
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR ZENER DIODES MMSZ4685 - MMSZ4717 SOD-123 PLASTIC PCAKAGE ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION Power Dissipation at TL=75ºC Junction Temperature
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MMSZ4685
MMSZ4717
OD-123
MMSZ4685
MMSZ4686
MMSZ4687
MMSZ4688
MMSZ4689
MMSZ4690
MMSZ4691
ED 69 SOD
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Untitled
Abstract: No abstract text available
Text: AOZ8001J Ultra-Low Capacitance TVS Diode Array General Description Features The AOZ8001J is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. ● – IEC 61000-4-2, level 4 ESD immunity test – ±15kV (air discharge) and ±8kV (contact discharge)
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AOZ8001J
AOZ8001J
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oz800
Abstract: SOT-143 MARKING 550 AOZ8001JI sot143 TOP marking AOZ8001A SOT143-4L
Text: AOZ8001J Ultra-Low Capacitance TVS Diode Array General Description Features The AOZ8001J is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. ● – IEC 61000-4-2, level 4 ESD immunity test e d en mm
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AOZ8001J
AOZ8001J
oz800
SOT-143 MARKING 550
AOZ8001JI
sot143 TOP marking
AOZ8001A
SOT143-4L
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zener diode zd16
Abstract: ZD24 ZD15 ZD18 zd33 ZD8.2 ZD12 zd27 ZD10 ZD11
Text: UNISONIC TECHNOLOGIES CO., LTD ZD2.4 THRU ZD36 ZENER DIODE ZD2.4 THRU ZD36 ZENER DIODES 3 FEATURES 2 *Compact, 2-pin SOD-323 and 3-pin(SOT-23) mini-mold types for high-density mounting. 1 SOT-23 *High demand voltage range (2.4V~36V) is manufactured on high-efficient non-wire bonding production line.
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OD-323)
OT-23)
OT-23
OD-323
QW-R601-006
zener diode zd16
ZD24
ZD15
ZD18
zd33
ZD8.2
ZD12
zd27
ZD10
ZD11
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.
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OD-323
OD-123)
OT-23)
OT-23
OD-123
OD-323
QW-R601-006
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fast recovery diode 600v 5A
Abstract: Diode 400V 5A SC311 SC311-4 SC311-6 diode 400v 0.5a
Text: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code HC Applications
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SC311
SC311-4
SC311-6
10mnction
SC311
fast recovery diode 600v 5A
Diode 400V 5A
SC311-4
SC311-6
diode 400v 0.5a
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2sc2112
Abstract: SC211 SC211-2 SC211-4 DIODE marking ED ed marking code transient 400v high speed diode 08A marking
Text: SC211 0.8A ( 200V to 400V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GF Applications
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SC211
SC211-2
SC211-4
10mance
SC211
2sc2112
SC211-2
SC211-4
DIODE marking ED
ed marking code transient
400v high speed diode
08A marking
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ED marking code diode
Abstract: SC321-2 SC321 marking HB
Text: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code
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SC321
SC321-2
SC321
ED marking code diode
SC321-2
marking HB
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ED marking code diode
Abstract: No abstract text available
Text: CM1204 4-Channel ESD Array in CSP Product Description The CM1204 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CM1204
MIL-STD-883
CM1204/D
ED marking code diode
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ZD4.7
Abstract: AE SOT23 0.9v ZD12 ZD33 ZD6.2 ZD8.2 ZD15 diode zd33 ZD24 zener diode zd16
Text: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES 3 FEATURES 2 1 SOT-23 *Compact, 2-pin SOD-323 and 3-pin(SOT-23) mini-mold types for high-density mounting. 2 *High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.
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OT-23
OD-323)
OT-23)
OD-323
QW-R601-006
ZD4.7
AE SOT23 0.9v
ZD12
ZD33
ZD6.2
ZD8.2
ZD15
diode zd33
ZD24
zener diode zd16
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BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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Untitled
Abstract: No abstract text available
Text: CM1204 4-Channel ESD Array in CSP Product Description The CM1204 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CM1204
CM1204
MIL-STD-883
CM1204/D
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Untitled
Abstract: No abstract text available
Text: ERB83-006 2a : Outline Drawings SCHOTTKY BARRIER DIODE : Features : Marking Low VF • X -f y ^ ^ f c r - K ^ t t l c a v . ' * 7 - 3 - K Hi Color code : Super high speed switching. High reliability by planer design. A bridg ed typ e name S E ? 5 7. : Applications
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ERB83-006
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DTZ6.8B
Abstract: DTZ33B PTZ27A dt2 marking code RLZJ6.8B RLS135 DTZ30C DTZ9.1 zener dtz33B
Text: Part Marking Mold type § Diodes 185 Part Marking @ Z e n e r Diodes (PTZ Series Mold type Q Z e n e r Diodes (DTZ Series) Part No. CD Part No. 0 0 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 8 9 9 9 A A A C C C E E E F F F H H H J J J L L L 1 2 1 2 1 2 1 2 1 2 1 2
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PTZ10A
RLZ39
RL/-39
RLZ51
RL756
DTZ6.8B
DTZ33B
PTZ27A
dt2 marking code
RLZJ6.8B
RLS135
DTZ30C
DTZ9.1
zener dtz33B
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ED marking code diode
Abstract: D95E
Text: Central“ CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: SURFACE MOUNT SILICON SCHOTTKY DIODES The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an
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OT-23
OT-23
ED marking code diode
D95E
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DIODE marking ED
Abstract: ED marking code diode ED MARKING CODE
Text: ; -¡X •A> Central CMPD7006 CMPD7006A CMPD7006C CMPD7006S Semiconductor Corp. DESCRIPTION: SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode
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CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
CMPD7006,
CMPD7006A,
CMPD7006S
OT-23
DIODE marking ED
ED marking code diode
ED MARKING CODE
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TRANSISTOR BC 208
Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
Text: 17E D TELEFUNKEN ELECTRONIC m fi^QO^b QDQRMSR • ALGG BU 208 D ■ffmewraiH! electronic Crtativ« TKhnot6g<e9 r-33-c? Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In colour TV-receivers Features: • Monolithic integrated inverse diode
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r-33-c?
TRANSISTOR BC 208
bu208D
bc 301 transistor
BF56
MU diode MARKING CODE
Bu 208 D
transistor Bu 208
TRANSISTOR BC 208 B
M2517
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)
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marking code diode R1
Abstract: No abstract text available
Text: Central" CMWSH-4 semiconductor Corp. SURFACE MOUNT SUPERmini DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low Vp, consists of two galvanically isolat ed SUPERmini™Silicon Schottky diodes. The CMWSH-4 has been designed for use in high
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14-November
OT-343
OT-343
marking code diode R1
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Untitled
Abstract: No abstract text available
Text: Central CMWSH-4 TM Semicondui SURFACE MOUNT SUPERmini DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low Vp, consists of two galvanically isolat ed SUPERmini™ Silicon Schottky diodes. The CMWSH-4 has been designed for use in high
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14-November
OT-343
OT-343
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Marking v5j
Abstract: tvrs8
Text: TO SH IBA TVR5B,TVR5G,TVR5J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR5B, TVR5G, TVR5J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : If (AV) = 0-5 A Repetitive Peak Reverse Voltage : V r r m = 100—600 V Reverse Recovery Time
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ED marking code diode
Abstract: sot-23 marking code T25 diode MARKING ED
Text: Central" CMPD914E semiconductor Corp. NHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.
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CMPD914E
CMPD914
OT-23
20-February
OT-23
ED marking code diode
sot-23 marking code T25
diode MARKING ED
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