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    ED GENERAL SEMICONDUCTOR Search Results

    ED GENERAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ED GENERAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 2SA1018

    Abstract: 2SA1018 2SC1473 2SC147
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original     		PDF 2002/95/EC) 2SA1018 2SC1473 ic 2SA1018 2SA1018 2SC1473 2SC147

    T106, scr

    Abstract: T106D1 S4006LS S2008LS3 2N6565 S2004VS1
    Text: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave


    Original     		PDF O-220 O-202 O-252 O-251 of972-580-7777 T106, scr T106D1 S4006LS S2008LS3 2N6565 S2004VS1

    1N4586GP

    Abstract: No abstract text available
    Text: 1N4383GP thru 1N4385GP, 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed*


    Original     		PDF 1N4383GP 1N4385GP, 1N4585GP 1N4586GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N4586GP

    T106 thyristor

    Abstract: S4008LS3 T106M
    Text: * Se le ka s ge ED Z NI E5 G 39 CO 716 E R #E ct L. U. c Pa ed le Fi TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave


    Original     		PDF O-220 O-202 O-252 O-251 T106 thyristor S4008LS3 T106M

    T106D1

    Abstract: T106, scr T106 thyristor SCR T106 s4006ls3 EC103D 2N6565 S6010LS3 S6010FS21 T107B1
    Text: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A RoHS E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave


    Original     		PDF O-220 O-202 O-252 O-251 O-220 T106D1 T106, scr T106 thyristor SCR T106 s4006ls3 EC103D 2N6565 S6010LS3 S6010FS21 T107B1

    Untitled

    Abstract: No abstract text available
    Text: * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se s ge ka c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave


    Original     		PDF O-220 O-202 O-252 O-251 O-220

    S4008LS3

    Abstract: No abstract text available
    Text: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave


    Original     		PDF O-220 O-202 O-252 O-251 of972-580-7777 S4008LS3

    T106, scr

    Abstract: T106d1 2N6565 S4008FS21 scr To 202 T106 thyristor s4006ls2 T106 scr TO-251 Outline T106B
    Text: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave


    Original     		PDF O-220 O-202 O-252 O-251 T106, scr T106d1 2N6565 S4008FS21 scr To 202 T106 thyristor s4006ls2 T106 scr TO-251 Outline T106B

    T106, scr

    Abstract: T106 thyristor T106D1 T106 scr EC103B T106B1 3-lead Compak SCR T106 2N6565 S4004VS2
    Text: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave


    Original     		PDF O-220 O-202 O-252 O-251 O-220 T106, scr T106 thyristor T106D1 T106 scr EC103B T106B1 3-lead Compak SCR T106 2N6565 S4004VS2

    88509

    Abstract: 1N4933GP 1N4937GP DO-204AL JESD22-B102 J-STD-002
    Text: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4933GP 1N4937GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 88509 1N4937GP DO-204AL JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4942GP 1N4948GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    1N4942GP

    Abstract: 1N4948GP DO-204AL JESD22-B102 J-STD-002
    Text: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4942GP 1N4948GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 1N4948GP DO-204AL JESD22-B102 J-STD-002

    1N4942GP

    Abstract: 1N4948GP DO-204AL JESD22-B102D J-STD-002B
    Text: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4942GP 1N4948GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N4948GP DO-204AL JESD22-B102D J-STD-002B

    1N4933GP

    Abstract: 88509 1N4937GP DO-204AL JESD22-B102D J-STD-002B
    Text: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4933GP 1N4937GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 88509 1N4937GP DO-204AL JESD22-B102D J-STD-002B

    1N4947GP-E3/23

    Abstract: No abstract text available
    Text: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4942GP 1N4948GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N4947GP-E3/23

    1N4933GP

    Abstract: No abstract text available
    Text: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4933GP 1N4937GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    1N4933GP

    Abstract: 88509 1N4937GP DO-204AL JESD22-B102D J-STD-002B
    Text: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4933GP 1N4937GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 88509 1N4937GP DO-204AL JESD22-B102D J-STD-002B

    1N4933GP

    Abstract: 1N4937GP DO-204AL JESD22-B102 J-STD-002
    Text: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*


    Original     		PDF 1N4933GP 1N4937GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 1N4937GP DO-204AL JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: RGP25A thru RGP25M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


    Original     		PDF RGP25A RGP25M DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC DO-201AD, 08-Apr-05

    RGP10G

    Abstract: RGP10JE RGP10J-E3/54 DO-204AL JESD22-B102 J-STD-002 RGP10A RGP10M rgp10j-e3 88700
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


    Original     		PDF RGP10A RGP10M MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC 18-Jul-08 RGP10G RGP10JE RGP10J-E3/54 DO-204AL JESD22-B102 J-STD-002 RGP10M rgp10j-e3 88700

    rgp10g

    Abstract: diode RGP 30 JESD22-B102D RGP10J-E3/54 RGP10K DO-204AL J-STD-002B RGP10A RGP10M RGP10J
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


    Original     		PDF RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 rgp10g diode RGP 30 JESD22-B102D RGP10J-E3/54 RGP10K DO-204AL J-STD-002B RGP10M RGP10J

    RGP10J-E3/54

    Abstract: rgp10g rgp10j diode DO-204AL JESD22-B102D J-STD-002B RGP10A RGP10M
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


    Original     		PDF RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 RGP10J-E3/54 rgp10g rgp10j diode DO-204AL JESD22-B102D J-STD-002B RGP10M

    BUK657-500B

    Abstract: et 25 diode
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FR ED FET with fast recovery


    OCR Scan     		PDF BUK657-500B T0220AB BUK657-500B et 25 diode

    DIODE M4A

    Abstract: j4a diode C25F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esign ed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferrod Devices


    OCR Scan     		PDF MBV109T1 MMBV109LT1* MV209* SC-70/SOT-323 OT-23 DIODE M4A j4a diode C25F