ECL2500
Abstract: ECL2517
Text: CIRCUIT TYPE ECL2517 EMITTER-COUPLED-LOGIC DECODER ECL INTEGRATED CIRCUIT TYPE ECL2517 BULLETIN NO. DL-S 6911283, DECEMBER ECL2500 S E R IE S EMITTER-COUPLED-LCN FOR APPLICATION IN ULTRA-HIGH-! ECL DECO D ER MODULE ED D IG ITA L SYSTEM S description The ECL2500 series is a compatible family of ECL functions
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ECL2517
ECL2500
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SN72710
Abstract: SN52710 SN72711 SN52711 73222 7400s texas instruments DTL logic
Text: LIN EA R IN T EG R A T ED CIRCUITS CIRCUIT TY P ES SN52710, SN72710 D IF F E R E N T IA L COM PARATORS Fast Response Times Low Offset Characteristics schematic O utput Compatible with Most T T L and D T L Circuits description The SN 52710 and SN72710 are monolithic high
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SN52710,
SN72710
SN52710
SN72711
SN52711
73222
7400s
texas instruments DTL logic
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marking CODE GG
Abstract: No abstract text available
Text: 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D ALL COPYRIGHT - FOR 6 5 4 3 2 PU B LIC ATIO N RIG HTS LOC R E S ER V ED . B5 BY TYCO ELECTRONICS CORPORATION. REVISIONS D IS T 00 LTR B4 B5 HOUSING MATERIAL: COLOR: NATURAL. A A D A CONTACT MATERIAL:
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ECR-08-032448
ECQ-09-024606
9DEC2008
300CT09
SAE-AMS-QQ-N-290
13DEC04
marking CODE GG
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2N5758
Abstract: 2N5760
Text: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m
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2N5758,
2N5759.
2N5760
2N5758
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tis25
Abstract: TIS26 10-15mV
Text: TYPES TIS25, TIS26, TIS27 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 7 0 1 , M A R C H 1 9 7 2 TWO M A TC H ED F IE L D -E F F E C T TRAN SISTO RS |yfs|/Cjss Ratio • High High-Frequency Figure-of-Merit
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TIS25,
TIS26,
TIS27
tis25
TIS26
10-15mV
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2N2217
Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
Text: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA
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2N2217
2N2222.
2N2218A,
2N2219A,
2N2221A,
2N2222A
2N2222A)
2N2218,
2N2221
KH 2222
ic TT 2222
ip 2222A
2N2218
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2N3790
Abstract: 2N3789
Text: TYPES 2N3789, 2N3790, 2N3791, 2N3792 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS F O R P O W ER -A M P LIFIER AND H IGH -SPEEO -SW ITCHIN G A P P LIC A TIO N S D ES IG N ED F O R C O M P LE M EN T A R Y USE WITH 2N3713 T H R U 2N3716 • 150 Watts at 25 C Case Temperature
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2N3789,
2N3790,
2N3791,
2N3792
2N3713
2N3716
2N3790
2N3789
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q2t2905
Abstract: No abstract text available
Text: TYPE Q2T2905 QUAD P-N-P SILICON TRANSISTOR B U L L E T I N N O . D L -S 7 3 1 1 7 0 2 , A P R I L 1 9 7 2 - R E V I S E D M A R C H 1 97 3 D ESIGN ED FOR MEDIUM-POWER SWITCHING AND G E N E R A L PURPOSE A M P LIFIER APPLICATIONS • High Breakdown Voltage Combined
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Q2T2905
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2N4906
Abstract: 2N4904 2N4905
Text: TYPES 2N4904, 2N4905, 2N4906 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS F O R P O W ER -A M P LIFIER AND H IGH -SPEED -SW ITCH IN G A P P LIC A T IO N S D ES IG N ED F O R C O M P LE M EN T A R Y U SE W ITH 2N4913, 2N4914, 2N4915 Z Ä z • 87.5 W at 25°C Case Temperature
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2N4904,
2N4905,
2N4906
2N4913,
2N4914,
2N4915
P0SSI81E.
2N4904
2N4905
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2N4398
Abstract: 2n4399 4398m
Text: TYPES 2N4398, 2N4399 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS CD H F O R P O W ER -A M P LIFIER AND HIGH -SPEED -SW ITCHING A P P LIC A T IO N S D ES IG N ED FO R C O M P LE M EN T A R Y USE WITH 2N5301, 2N5302 c < r "D r m m H to • 200 Watts at 25° C Case Temperature
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2N4398,
2N4399
2N5301,
2N5302
2N4398
4398m
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2N2537
Abstract: 2n2540 2N2537 texas 2M253 2N2538 2n2539
Text: TYPES 2N2537 THRU 2N2540 N-P-N SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 9 4 1 3 0 , A U G U S T 1 9 6 3 -R E V IS E D J A N U A R Y 1969 D ESIG N ED FOR MEDIUM-POWER SWITCHING AND G EN ERA L PURPOSE A M P LIF IER APPLICATIONS • Total Switching Time . 80 nsec max at 150 ma
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2N2537
2N2540
2N2538
2N2537 texas
2M253
2N2538
2n2539
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SN72710
Abstract: SN72720 SN52711
Text: LIN EA R IN T EG R A T ED CIRCUITS CIRCUIT TY P E SN72720 D U A L D IF FE R E N T IA L C O M PA R A TO R S Fast Response Times • 00 o Low Offset Characteristics r -2 m£ rj h ZH Output Compatible with Most T T L and D T L Circuits Pm N D U A L -IN -L IN E PACKAG E TO P V IE W
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SN72720
SN72710
100-mV
SN52711/SN7Z711
SN72720.
SN52711
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2920A
Abstract: NS2N A2JA 2N2920A 2N2913 2N2920
Text: mmm types 2N2813 t h r u 2N29?o mZSMA 2N2972 THRU 2N2979 DUAL N P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 . M A R C H 1969 A BR O A D F A M IL Y OF D U A L T R A N S IS T O R S R ECO M M EN D ED FO R Differential Amplifiers High-Gain, Low-Noise, Audio Amplifiers
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2N2813
2N2972
2N2979
2920A
NS2N
A2JA
2N2920A
2N2913
2N2920
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2n341
Abstract: No abstract text available
Text: TYPES 2N339 THRU 2N343 N-P-N GROWN-JUNCTION SILICON TRANSISTORS BU LL ET IN NO. DL-S 733955, JUNE 1 9 6 3 -R E V lS E D M ARCH 1973 1 Watt at 25°C Case Temperature Designed for Audio and Servo Amplifier Applications m e ch a n ical d a ta The transistor is in an w eld ed p a c k a g e with glass-to-m etal hermetic seal betw een case a n d leads. Unit
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2N339
2N343
2N341
2n341
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2N5241
Abstract: No abstract text available
Text: T Y P E 2N5241 N-P-N SIL ICO N P O W E R T R A N S I S T O R TYPE 2N 5241 BULLETIN NO. D L -S 7111482, MAY HIG H V O L T A G E , H IG H FO R W A RD A N D REVERSE ENERGY DESIG N ED FOR IN D U S T R IA L A N D M IL IT A R Y APPLICATIO N S • 125 W at 62.5°C Case Temperature
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2N5241
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Q2T2222
Abstract: No abstract text available
Text: TYPE Q2T2222 QUAD N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 1 7 0 3 , A P R IL 1 9 7 2 - R E V IS E D M A R C H 1 9 7 3 D E SIG N ED FOR M EDIUM -PO W ER SW ITCH IN G A N D G E N E R A L PURPOSE A M P L IF IE R APPLICATIO N S High Breakdown Voltage Combined
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Q2T2222
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3n128
Abstract: No abstract text available
Text: T Y P E 3N128 N -C H A N N E L IN S U LA T ED -G A T E D E P LE T IO N -T Y P E F IE LD -E FF E C T TR A N S IS TO R B U L L E T IN N O . D L S 7 3 1 2 0 0 6 . M A R C H 1973 DEPLETION-TYPE MOS SILICON TRANSISTOR For Use in VHF Amplifier Applications to 300 MHz
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3N128
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3N153
Abstract: No abstract text available
Text: TY P E 3N153 N -C H A N N EL D EP LET IO N -T Y P E IN S U LA TED -G A TE FIELO -EFFEC T TR A N S IS TO R B U L L E T IN N O . D L -S 7 3 1 1 9 8 5 , M A R C H 1 9 7 3 D EPLETIO N -TYPE MOS SILIC O N TR A N SISTO R DESIG N ED FOR CHOPPER A N D SW ITCH IN G APPLICATIO N S
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3N153
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2N2102A
Abstract: No abstract text available
Text: TYPES 2N2102, 2N2102A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 4 6 , M A R C H 1 9 7 3 FO R M ED IU M -PO W ER , G E N E R A L PU R PO SE A P P L IC A T IO N S • High Breakdown Voltage Combined with Low Saturation Voltage • hFE • ■ ■ Guaranteed from 10 m A to 1 A
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2N2102,
2N2102A
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2N5883
Abstract: 2N 5883 2N588
Text: T Y P E S 2N5883. 2N588 4 P- N - P S I N G L E - D I F F U S E D S I L I C O N P O W E R T R A N S I S T O R S c < FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING APPLICATIO N S D ESIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5885, 2N 5886 •
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2N5883.
2N588
90-mJ
2N5883
2N 5883
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TDA 7277
Abstract: TDA 8345 TDA 7988 tda 9580 TDA 8344 TDA 9394 TDA 8659 AN tda 8945 j tda 7840 ic tda 9361
Text: Tem ic S e m i c o n d u c t o r s Addresses Europe France T E M IC F rance L es Q u a d ra n ts 3. av en u e du centre B.P. 309 7 8 0 5 4 S t.-Q u e n tin -e n -Y v e lin e s C ed ex Tel: 33 1 3 0 6 0 7 0 0 0 Fax: 33 1 3 0 6 0 7111 Germany T E M IC T E L E F U N K E N
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a5t2222
Abstract: No abstract text available
Text: TYPES TIS109.TIS110.TISm N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 3 1 7 , M A Y 1 9 7 0 - R E V I S E D M A R C H 1 9 7 3 S IL E C T t T R A N S IS T O R S t DESIG N ED FOR HIGH-SPEED, M EDIUM -PO W ER SW ITCHING A N D G EN ER A L PURPOSE A M P L IF IE R APPLICATIO N S
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TIS109
TIS110
5T2222
a5t2222
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16 level Priority Encoder
Abstract: No abstract text available
Text: MOS LSI T M S 2801 JC , T M S 2801 NC EIGHT-LEVEL PRIORITY ENCODER featu es a 3J c 1024-bit capacity > 3 -< static operation maximum access time under 1 microsecond open-drain output buffers T T L compatible description T h e T M S 2 80 1 J C / N C is a p ro g ram m ed T M S 2 8 0 0 J C / N C . A l l e le c tric a l an d m e ch a n ica l c h a ra c te ris tic s o f th e T M S 2 8 0 0
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1024-bit
16 level Priority Encoder
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TP401A
Abstract: CD4051A CD4052A 40S3A TP4053
Text: r T Y P E S TF4 Q 5 1A , TF4 0 5 2 A . TF4 0 5 3 A. TP 4 0 5 1A , T P 4 0 5 2 A , TP 4 0 5 3 A A N A L O G M U L T IP L E X E R S / D E M U L T IP L E X E R S ICM OS L O G IC C IR C U IT S p-r •M«r. R 19T“> D e sim ed to be Interchangeable w ith R C A C D 4 0 5 1 A , C D 4 0 5 2 A , and C D 4 0 5 3 A
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tf4q51a,
tf4052a.
tf4053a.
tp4051a,
tp4052a,
tp4053a
CD4051A,
CD4052A,
CD4053A
TP4063A
TP401A
CD4051A
CD4052A
40S3A
TP4053
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