transistor zo 607
Abstract: ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109
Text: EC3H02BA Ordering number : ENA1064A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
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EC3H02BA
ENA1064A
S21e2
1006size)
A1064-5/5
transistor zo 607
ZO 607 MA
zo 607
equivalent ZO 607
3308 TOP MARK IC
890 f 562 ic pdf datasheet
ic 565 application
zo 103 ma
zo 103 ma 75 607
ZO 109
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PDF
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EC3A02T
Abstract: No abstract text available
Text: 注文コード No. N 7 6 2 1 EC3A02T N7621 33004 新 EC3A02T 特長 N チャネル接合型シリコン電界効果トランジスタ コンデンサマイクロホン用 ・超小型（1006 サイズ） 薄型（0.35mm）リードレスパッケージ。
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EC3A02T
N7621
IT04751
IT04752
IT04753
ITR02650
EC3A02T
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A1947
Abstract: No abstract text available
Text: VS105E2 Ordering number : ENA1947 SANYO Semiconductors DATA SHEET VS105E2 ESD Protection Device for High-speed signal Line typ. 0.3pF Features • • • • Low capacitance (0.3pF) & high ESD immunity (18kV@IEC61000-4-2 contact discharge) Bidirectional characteristic Best suited for antenna (One Seg / GPS / FM) ESD protection
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ENA1947
VS105E2
IEC61000-4-2
ECSP1006-2-055)
A1947-3/3
A1947
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EC3A01B
Abstract: TA-3160
Text: Ordering number : ENN6612 EC3A01B N-Channel Silicon Junction FET EC3A01B Capacitor Microphone Applications Features • 0.15 0.15 0.05 1 2 0.25 0.4 0.65 0.25 • [EC3A01B] 0.35 0.2 3 0.5 1.0 • Ultrasmall 1006 size , thin (0.5mm) leadless package. unit : mm
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ENN6612
EC3A01B
EC3A01B]
E-CSP1006
EC3A01B
TA-3160
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IC 7107
Abstract: 5252 F 1006 C 5763 transistor PT 4962 marking 5241 CRE 6203 ECSP1006-3 EC3H10B current 5241 10419
Text: Ordering number : ENN7324 EC3H10B NPN Epitaxial Planar Silicon Transistor EC3H10B UHF to S Band Low-Noise Amplifier and OSC Applications Features 1 3 2 0.15 1 1.0 0.05 0.25 Top View 0.05 • [EC3H10B] Bottom View 0.5 0.65 • unit : mm 2183A Marking 2 0.05
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ENN7324
EC3H10B
EC3H10B]
S21e2
ECSP1006-3
IC 7107
5252 F 1006
C 5763 transistor
PT 4962
marking 5241
CRE 6203
ECSP1006-3
EC3H10B
current 5241
10419
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TF246
Abstract: TF252TH TF208TH TF222B condenser microphone ecm 30
Text: T OP I C S ニュースリリース製品トピックス 2008年6月4日リリース ECM 用ジャンクションFET 「TF246」 ※1 業界最小 パッケージ 業界採用率 トップシェア53% 達成！ 更に1億5千万個/月 増産！ ポータブル機器の小型化を実現
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TF246
-108dB
EC4A01TF
ECSP10061
TF222B
TF252TH
ECSP1006
TF246
TF252TH
TF208TH
TF222B
condenser microphone ecm 30
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PDF
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A1064
Abstract: EC3H02BA ECSP1006-3 A1064-1 7039a
Text: EC3H02BA 注文コード No. N A 1 0 6 4 B 三洋半導体データシート 半導体データシート No. N1064A をさしかえてください。 EC3H02BA NPN エピタキシァルプレーナ型シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用
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EC3H02BA
N1064A
S21e2
A1064-5/5
A1064
EC3H02BA
ECSP1006-3
A1064-1
7039a
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5252 f 0916
Abstract: 7453 ic ic 7924 5252 F 1006 an 17832 D2502 EC3H11B 7325 5252 0916 transistor t/51511d150/fw/a/buy/5252 f 0916
Text: Ordering number : ENN7325 EC3H11B NPN Epitaxial Planar Silicon Transistor EC3H11B High-Frequency Low-Noise Amplifier and OSC Applications 0.15 0.15 0.05 1 2 0.25 0.4 0.65 • [EC3H11B] 0.35 0.2 3 0.5 1.0 • Low noise : NF=1.5dB typ f=2GHz . unit : mm High cutoff frequency : fT=6.0GHz typ (VCE=1V). 2183
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ENN7325
EC3H11B
EC3H11B]
E-CSP1006-3
5252 f 0916
7453 ic
ic 7924
5252 F 1006
an 17832
D2502
EC3H11B
7325
5252 0916 transistor
t/51511d150/fw/a/buy/5252 f 0916
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4935N
Abstract: cbc 547 transistor Bf 966 cbc 639 SBFP405B TRANSISTOR cBC 415 mm2214 IC pc 0839 IB 6407
Text: Ordering number : ENN7456 SBFP405B NPN Epitaxial Planar Silicon Transistor SBFP405B UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • Package Dimensions Low noise : NF=1.25dB typ f=1.8GHz . High cutoff frequency : fT=25GHz typ (VCE=3V).
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ENN7456
SBFP405B
25GHz
S21e2
SBFP405B]
ECSP1006-4
4935N
cbc 547
transistor Bf 966
cbc 639
SBFP405B
TRANSISTOR cBC 415
mm2214
IC pc 0839
IB 6407
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EC3H06B
Abstract: TA248
Text: Ordering number:ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions unit:mm 2183 [EC3H06B] 0.15 0.15 0.05 1 2 0.05 3 0.5 1.0 0.4 0.05 0.25 0.35 0.2 0.25 • Low noise : NF=0.9dB typ f=1GHz .
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ENN6524
EC3H06B
EC3H06B]
S21e2
11GHz
1006size)
E-CSP1006-3
EC3H06B
TA248
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EC3H03B
Abstract: No abstract text available
Text: Ordering number : ENN6576 EC3H03B NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H03B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • 0.05 • unit : mm 2183 0.25 •
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ENN6576
EC3H03B
EC3H03B]
S21e2
E-CSP1006-3
EC3H03B
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sanyo 103 490 0220
Abstract: 74345 74346 cbc 639 7434 ic data sheet SBFP420B cbc 5468 CBC 548 ic 74347 74344
Text: Ordering number : ENN7434 SBFP420B NPN Epitaxial Planar Silicon Transistor SBFP420B UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • Low noise : NF=1.1dB typ f=1.8GHz . unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V).
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ENN7434
SBFP420B
20GHz
25GHz
S21e2
SBFP420B]
sanyo 103 490 0220
74345
74346
cbc 639
7434 ic data sheet
SBFP420B
cbc 5468
CBC 548
ic 74347
74344
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EC3A01T
Abstract: ECSP1006-3
Text: Ordering number : ENN7617 EC3A01T N-Channel Silicon Junction FET EC3A01T Electret Condenser Microphone Applications Features Bottom View Top View 1 1.0 1 0.05 • [EC3A01T] 0.05 0.65 • unit : mm 2223 0.25 • Ultrasmall 1006 size and thin (0.35mm) leadless
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ENN7617
EC3A01T
EC3A01T]
ECSP1006-3
EC3A01T
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EC2D01B
Abstract: ECSP1006-2 marking DA
Text: EC2D01B Ordering number : EN7646A SANYO Semiconductors DATA SHEET Shottky Barrier Diode EC2D01B 30V, 70mA Rectifier Applications • High frequency rectification switching regulators, converters and choppers . Features • • • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure.
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EC2D01B
EN7646A
EC2D01B
ECSP1006-2
marking DA
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EC4A01TF
Abstract: No abstract text available
Text: EC4A01TF 注文コード No. N 8 7 1 5 三洋半導体データシート N EC4A01TF N チャネル接合型シリコン電界効果トランジスタ コンデンサマイクロホン用 特長 ・超小型 （1006 サイズ） 薄型 （0.35mm） リードレスパッケージ。
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EC4A01TF
IT09955
IT02323
IT09956
IT02325
EC4A01TF
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EC3H05B
Abstract: No abstract text available
Text: 注文コード No. N 6 5 7 4 EC3H05B 三洋半導体データシート N EC3H05B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.2dB typ（f=1GHz） 。 。
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EC3H05B
S21e2
S21e2
EC3H05B
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EC3H08B
Abstract: No abstract text available
Text: Ordering number : 0000000 EC3H08B NPN Epitaxial Planar Silicon Transistor EC3H08B High-Frequency Amp Applications, Osc. Applications Preliminary • [EC3H08B] 0.15 0.15 0.05 1 2 0.25 0.4 0.65 • 0.35 0.2 3 0.5 1.0 • Low noise : NF=1.6dB typ f=2GHz . unit : mm
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EC3H08B
EC3H08B]
S21e2
EC3H08B
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transistor 1.8GHz 18dB
Abstract: No abstract text available
Text: Ordering number : 0000000 SBFP405B NPN Epitaxial Planar Silicon Transistor SBFP405B UHF to C Band Low-Noise Amplifier Osc. Applications • [SBFP405B] 0.35 0.2 0.15 0.15 0.05 3 4 0.25 0.4 0.65 • unit : mm 0000 1 2 0.05 1.0 • Low noise : NF=1.25dB typ f=1.8GHz .
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SBFP405B
SBFP405B]
25GHz
S21e2
ECSP1006
transistor 1.8GHz 18dB
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zo 607 MA
Abstract: equivalent ZO 607 transistor zo 607 EC3H04B
Text: Ordering number : ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H04B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • unit : mm 2183 0.05 • Low noise : NF=1.7dB typ f=2GHz .
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ENN6577
EC3H04B
EC3H04B]
E-CSP1006-3
zo 607 MA
equivalent ZO 607
transistor zo 607
EC3H04B
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PDF
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4935N
Abstract: SBFP405B ua 722 fc
Text: Ordering number : ENN7456 SBFP405B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP405B UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • Low noise : NF=1.25dB typ f=1.8GHz . High cutoff frequency : fT=25GHz typ (VCE=3V).
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ENN7456
SBFP405B
25GHz
S21e2
4935N
SBFP405B
ua 722 fc
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74368
Abstract: 7436 ic data sheet circuit diagram of 7436 ic ENN7436 SBFP540B 74367 9853 1331 br 8550 NPN
Text: Ordering number : ENN7436 SBFP540B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP540B UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cut-off frequency : fT=20GHz typ (VCE=1V).
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ENN7436
SBFP540B
20GHz
29GHz
S21e2
74368
7436 ic data sheet
circuit diagram of 7436 ic
ENN7436
SBFP540B
74367
9853 1331
br 8550 NPN
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PDF
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9746
Abstract: of ic 7808 ic 7808 D2502 EC3H08B ECSP1006-3 OF IC 7421 transistor c 6073 8948
Text: Ordering number : ENN7329 EC3H08B NPN Epitaxial Planar Silicon Transistor EC3H08B UHF to S Band Low-Noise Amplifier and OSC Applications • 0.15 0.15 0.05 1 2 0.25 0.4 0.65 • [EC3H08B] 0.35 0.2 3 0.5 0.05 0.5 Bottom view Specifications 0.6 1.0 • Low noise
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ENN7329
EC3H08B
EC3H08B]
S21e2
ECSP1006-3
9746
of ic 7808
ic 7808
D2502
EC3H08B
ECSP1006-3
OF IC 7421
transistor c 6073
8948
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PDF
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EC2D02B
Abstract: ECSP1006-2 MAA30
Text: EC2D02B 注文コード No. N 7 5 0 3 A 三洋半導体データシート 半導体データシート No.N7503 をさしかえてください。 EC2D02B ショットキバリアダイオード 30V, 100mA 整流素子 用途 ・スイッチングレギュレータ・コンバータ・チョッパ等の高周波回路整流用。
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EC2D02B
N7503
100mA
100mA,
21209SB
TC-00001845
TA-3593
EC2D02B
ECSP1006-2
MAA30
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PDF
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Untitled
Abstract: No abstract text available
Text: I Ordering number : ENN6578 NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions Features unit : mm • Low noise : NF=1.5dB typ f=2GHz . • High cut-off frequency : fx=10G H z typ (V cE =l V). 2 1 8 3
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OCR Scan
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ENN6578
EC3H07B
E-CSP1006-3
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