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    EC2612 Price and Stock

    United Monolithic Semiconductors EC2612-99F

    RF SMALL SIGNAL TRANSISTOR PHEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD EC2612-99F 100
    • 1 -
    • 10 -
    • 100 $14.4
    • 1000 $14.4
    • 10000 $14.4
    		Buy Now

    United Monolithic Semiconductors EC2612-99S

    RF SMALL SIGNAL TRANSISTOR PHEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD EC2612-99S 1
    • 1 -
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    Panasonic Electronic Components ERA-2AEC2612X

    RES.(1005) 0402 26.1K Ohms 0.25% 1/16W 25ppm AECQ2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik ERA-2AEC2612X
    • 1 -
    • 10 $0.08967
    • 100 $0.08967
    • 1000 $0.08967
    • 10000 $0.0735
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    Panasonic Electronic Components ERA-3AEC2612V

    RES.(1608) 0603 26.1K Ohms 0.25% 1/10W 25ppm AECQ2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik ERA-3AEC2612V
    • 1 -
    • 10 $0.08869
    • 100 $0.08869
    • 1000 $0.08869
    • 10000 $0.0727
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    Panasonic Electronic Components ERA-8AEC2612V

    RES.(3216) 1206 26.1K Ohms 0.25% 1/4W 25ppm AECQ2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik ERA-8AEC2612V
    • 1 -
    • 10 $0.26588
    • 100 $0.26588
    • 1000 $0.26588
    • 10000 $0.2312
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    Find more EC2612 price and stock on Findchips.com

    EC2612 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EC2612 United Monolithic Semiconductors 40GHz Super Low Noise PHEMT Original PDF
    EC2612-99F/00 United Monolithic Semiconductors 40GHz Super Low Noise PHEMT Original PDF
    EC2612-99F/00 United Monolithic Semiconductors 40GHz superlow noise PHEMT Original PDF
    EC2612-99X/00 United Monolithic Semiconductors 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Original PDF

    EC2612 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ec2612 phemt

    Abstract: EC2612
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 ec2612 phemt

    ec2612 phemt

    Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 phemt pHEMT transistor 30GHz MAR 618 transistor LS 9814

    Untitled

    Abstract: No abstract text available
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00

    pHEMT transistor 30GHz

    Abstract: EC2612 ec2612 pHEMT 158467
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 pHEMT transistor 30GHz ec2612 pHEMT 158467

    EC2612

    Abstract: ec2612 pHEMT MAR 618 transistor
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 pHEMT MAR 618 transistor

    ec2612 pHEMT

    Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26128099 ec2612 pHEMT pHEMT transistor 30GHz TRANSISTOR 30GHZ

    PPH25X

    Abstract: No abstract text available
    Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original     		PDF