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    EC MARKING NPN Search Results

    EC MARKING NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    EC MARKING NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package • Code SSSMini3-F2 • Marking Symbol: 9N • Pin Name 1: Base 2: Emitter


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    2002/95/EC) 2SC5946G PDF

    2SC5946

    Abstract: 2SC5946G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 9N • Pin Name 1: Base


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    2002/95/EC) 2SC5946G 2SC5946 2SC5946G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y • Pin Name 1: Base


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    2002/95/EC) 2SD2216G 2SB1462G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter


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    2002/95/EC) 2SD2620G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector


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    2002/95/EC) 2SD2623G PDF

    VEBO-15V

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter


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    2002/95/EC) 2SD2620G VEBO-15V PDF

    2SD2623G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector


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    2002/95/EC) 2SD2623G 2SD2623G PDF

    2SC3936G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name 1. Base 2. Emitter 3. Collector


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    2002/95/EC) 2SC3936G 2SC3936G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter 3: Collector


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    2002/95/EC) 2SD2620G PDF

    UNR32A5G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A5G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HC • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32A5G UNR32A5G PDF

    UNR32A8G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A8G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HF • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32A8G UNR32A8G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter


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    2002/95/EC) 2SC4805G PDF

    UNR32A1G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A1G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: FK • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32A1G UNR32A1G PDF

    UNR32A2G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A2G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: FL • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32A2G UNR32A2G PDF

    UNR32A6G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A6G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HD • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32A6G UNR32A6G PDF

    UNR32ANG

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KL • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32ANG UNR32ANG PDF

    UNR32AMG

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AMG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KH • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32AMG UNR32AMG PDF

    UNR32A0G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A0G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KT • Pin Name 1: Base 2: Emitter


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    2002/95/EC) UNR32A0G UNR32A0G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter


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    2002/95/EC) 2SC4805G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y


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    2002/95/EC) 2SD2216G 2SB1462G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S


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    2002/95/EC) 2SC4805G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name


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    2002/95/EC) 2SC3936G PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 65A EA BCW 65B EB BCW 65C EC BCW66F EF BCW 66G EG BCW 66H EH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION


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    BCW65 BCW66 BCW66F BCW67 BCW68 OT-23 PDF

    marking 65B

    Abstract: BCW65B BCW65A BCW65C
    Text: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _


    OCR Scan
    BCW65A, BCW65B BCW65C BCW65A BCW65B marking 65B BCW65A BCW65C PDF