FIP6C13
Abstract: FIP7B13 NEC FIP FIP5B15 FIP6F13 FIP6A13 FIP20X2AC FIP6D15 FIP11F10 FIP5D8
Text: FIP Products Selection Guide August 1994 1994 NEC Electronics Inc. All rights reserved. Printed in U.S.A. FIP is a registered trademark of NEC Corporation. 1 NEC’s FIP Panels Perform the Crucial Role of Conveying Accurate Information 2 Features •
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S 1040 smd
Abstract: 8239 Diode IR 8294 TEMT1000 TEMT1020 TEMT1030 TEMT1040 TSML1000 EC 1030
Text: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight
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TEMT1000
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
2002/95/EC
2002/96/EC
D-74025
S 1040 smd
8239
Diode IR 8294
TEMT1020
TEMT1030
TEMT1040
TSML1000
EC 1030
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Untitled
Abstract: No abstract text available
Text: TEMD1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
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TEMD1000
TEMD1000
TEMD1020
TEMD1030
TEMD1040
TSMF1000
TSML1000
2002/95/EC
2002/96/EC
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M2D068-BF
Abstract: M4S068-BF W4D200-CI14 W2D200-CI18 A2D200-AI18 068-BF ak38 M4D068-BF a4s 43 A2D200-AK18
Text: Information AC axial fans AC centrifugal S-Range, Ø 200 *4D 200 1 M4D068-BF 3 *4S 200 M4S068-BF 4 2650 3000 2650 3000 1450 1700 1370 1600 65 60 60 75 22 20 30 26 0,19 0,12 0,28 0,31 0,08 0,06 0,21 0,18 -1,5/ 400 1,5/ 400 - 140 140 150 150 70 90
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M4S068-BF
A2D200-AK18
A2D200-AI18
200-AK38
200-AI38
A4D200-AK14
A4D200-AI14
200-AK04
200-AI04
S2D200-BK18
M2D068-BF
M4S068-BF
W4D200-CI14
W2D200-CI18
A2D200-AI18
068-BF
ak38
M4D068-BF
a4s 43
A2D200-AK18
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Untitled
Abstract: No abstract text available
Text: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight
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TEMT1000
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
2002/95/EC
2002/96/EC
D-74025
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Untitled
Abstract: No abstract text available
Text: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight
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TEMT1000
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
2002/95/EC
2002/96/EC
08-Apr-05
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TEMD1000
Abstract: TEMD1040 TEMD1020 TEMD1030 TSMF1000 TSML1000
Text: TEMD1000/1020/1030/1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
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TEMD1000/1020/1030/1040
TEMD1000
TEMD1000
TEMD1020
TEMD1030
TEMD1040
TSMF1000
TSML1000
2002/95/EC
2002/96/EC
TEMD1040
TEMD1020
TEMD1030
TSML1000
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Untitled
Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
08-Mar-05
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Untitled
Abstract: No abstract text available
Text: TEMD1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
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TEMD1000
TEMD1000
TEMD1020
TEMD1030
TEMD1040
TSMF1000
TSML1000
2002/95/EC
2002/96/EC
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TEMT1000
Abstract: TEMT1020 TEMT1030 TEMT1040 TSML1000 vishay 1030
Text: TEMT1000/1020/1030/1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
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TEMT1000/1020/1030/1040
TEMT1000
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
2002/95/EC
2002/96/EC
08-Apr-05
TEMT1020
TEMT1030
TEMT1040
TSML1000
vishay 1030
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S 1040 smd
Abstract: TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
D-74025
08-Mar-05
S 1040 smd
TSML1020
TEMT1000
TSML1030
TSML1040
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TSML1020
Abstract: TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000/1020/1030/1040
TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
08-Apr-05
TSML1020
TEMT1000
TSML1030
TSML1040
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S 1040 smd
Abstract: No abstract text available
Text: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight
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TEMT1000
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
2002/95/EC
2002/96/EC
08-Apr-05
S 1040 smd
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Untitled
Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TEMT1000/1020/1030/1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
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TEMT1000/1020/1030/1040
TEMT1000
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
2002/95/EC
2002/96/EC
18-Jul-08
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TEMD1000
Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Text: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
08-Apr-05
TEMD1000
TSMF1020
TSMF1030
TSMF1040
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S 1040 smd
Abstract: 1030 mhz TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
08-Apr-05
S 1040 smd
1030 mhz
TSML1020
TEMT1000
TSML1030
TSML1040
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Untitled
Abstract: No abstract text available
Text: Submin-Röhre indirekt geheizt Submin-tube indirectly heated TELEFUNKEN EC 1030 EC 1031 UHF-Triode Vorläufige technische Daten • Tentative data Zwischenschichtfreie Spezialkathod e D ie S p e z ia lk a th o d e d ie se r R öhre schließt d a s Entstehen eine r störenden Zwischenschicht selbst
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C2705
Abstract: rehm aircell 21945
Text: www.teleqaertner.com 125-120 12.5 í to •ai Mechanical characteristics Mechanische Eigenschaften cable group Kabelgruppe © 1030 A F- FR N C -B LOW LOSS, 58CRT7 LOW LOSS, AIRCELL 5, EC 200, SPEEDF0AM 200 HFJ, WCX200 interfac e dim ensions acc. to assem b ly code
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58CRT7
R-200,
WCX200
C2705
J01150A
r/EWA10061-00
rehm
aircell
21945
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EC1030
Abstract: 1501a RK 100 TELEFUNKEN
Text: Submin-Röhre indirekt geheizt Submin-tube indirectly heated TELEFUNKEN EC 1030 EC 1031 U H F -T rio de Vorläufige technische Daten • Tentative data Zwischenschichtfreie Sp ezialkathode D ie S p e z ia lk a th o d e d ie se r R öhre schließt d a s Entstehen eine r störenden Zwischenschicht selbst
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-1W59
EC1030
1501a
RK 100
TELEFUNKEN
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MIL-STD-883C
Abstract: marking jh mil-std-202 204
Text: Quadrature Hybrids Space Qualified JH-Series Electrical S p ec ific a tio n s JH-709 JH-708 P a r t# Frequency Range 4-21 MHz 900-1030 MHz Insertion Loss 1 dB Max 0.5 dB Max Isolation 18 dB Min 18 dB Min Amplitude Balance 3 dB Max 1.2 dB Max VSWR All Ports
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JH-708
JH-709
JH-S5000
JH-S5001
Mil-Std-202
Mil-Std-883C
marking jh
mil-std-202 204
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C2705
Abstract: J01150A0641 aircell5
Text: www.teleqoertner.com 125-120 7157 Fax: +49 125-0 Mechanische Eigenschaften cable group Kabelgruppe interface dimensions acc. to assembly code centre conductor outer conductor mating life coupling torque Steckgesicht nach Montageanleitung Innenleiter Außenleiter
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58CRT7
LMR-200,
WCX200
C2705
J01150A0641
J01150A0641
aircell5
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FIP16J5R
Abstract: FIP20D6R FIP16B13AR FIP4E8BS FIP16J5AR FIP16B13 FIP4Y8S FIP4Q8S FIP4A8DS FIP6A
Text: Table 1 For Data Terminal and Others 2 A lpha-N um eric type ►Dimisèswôns Type No. No. of Digits Fig. No. e.H C.W (mm) (mm) N/l Mi/ ay FIP6A8BR W few TOTOW W TO TO TO TO TO TO ft. w, m, 4s, w, yj. tu. «y. tw, * , P.H (mm) P.L (mm) P.T (mm) L.P (mm)
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FIP10A6CR
FIP16J5R
FIP16J5AR
FIP16B13AR
FIP20D6R
FIP4E8BS
FIP16B13
FIP4Y8S
FIP4Q8S
FIP4A8DS
FIP6A
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Untitled
Abstract: No abstract text available
Text: R EV ECN. NO. A EDIQÄO INICIAL B NOVO CÓDIGO APP DATE Unit: mm. Tolerances: ±0.05 mm Reference dimension for PCB layout HOW TO ORDER: ICC4296CDR T E C H N IC A L C H A R A C T R IS T IC S 3. Electrical Characteristics 5. Environmental Characteristics Number of contacts: 6 pins
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ICC4296CDR
4296C
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