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    FPD3000SOT89

    Abstract: 9421
    Text: EB3000SOT89BC FPD3000SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.0 2.2 29.5 29.0 12.0 11.5 0.9 0.9 43.5 43.0 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		PDF EB3000SOT89BC FPD3000SOT89 400mA FPD3000SOT89; 3000m 30mil 31mil 9421

    FPD3000SOT89E

    Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
    Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE EB3000SOT89-BC FPD3000SOT89E FPD3000SOT89CE micro transistor 1203 EB3000SOT89-BC

    FPD3000SOT89

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 30dBm 45dBm FPD3000SOT89CE 25mx1500m FPD3000SOT89CE: FPD3000SOT89CECE EB3000SOT89-BC FPD3000SOT89