DT 1040 027
Abstract: EB1734 RD91
Text: TODV 640 -> 1240 ALTERNISTORS . . FEATURES HIGH COMMUTATION : > 142 A/ms 400Hz INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 640 -> 1240 use a high performance passivated glass alternistor technology. Featuring
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DT 1040 027
EB1734
RD91
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Enumeration SI Units
Abstract: iso 7811 16X16 1E38 IEEE754 1E-38
Text: Order this document by EB173/D EB173 The SNVT Master List and Programmer’s Guide Overview Echelon Corporation provides a predefined set of Standard Network Variable Types SNVTs in order to promote interoperability among LONWORKS–based products. SNVTs facilitate interoperability by
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EB173/D
EB173
EB173/D*
Enumeration SI Units
iso 7811
16X16
1E38
IEEE754
1E-38
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rd91 grease
Abstract: EB1734 RD91
Text: TODV 640 -> 1240 ALTERNISTORS . . FEATURES HIGH COMMUTATION : > 142 A/ms 400Hz INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 640 -> 1240 use a high performance passivated glass alternistor technology. Featuring
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EB1734)
rd91 grease
EB1734
RD91
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EB1734
Abstract: RD91
Text: TODV 625 -> 1225 ALTERNISTORS . . FEATURES HIGH COMMUTATION : > 88 A/ms 400Hz INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 625 -> 1225 use high performance passivated glass alternistor technology. Featuring
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EB1734)
EB1734
RD91
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EB1734
Abstract: RD91
Text: TODV 625 -> 1225 ALTERNISTORS . . FEATURES HIGH COMMUTATION : > 88 A/ms 400Hz INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 625 -> 1225 use high performance passivated glass alternistor technology. Featuring
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EB1734)
EB1734
RD91
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M143206EVK
Abstract: M143150EVK MC143120E2DW M143120EVK MC143150 MC143120B1DW Electronics Workbench guide M143213EVK5 MOTOROLA neuron 3120 M143215EVK5
Text: LONWORKSNEURON IC Products In Brief . . . CHIP processors are Motorola’s NEURON sophisticated VLSI devices that make it possible to implement low–cost Local Operating Network applications. The unique combination of hardware and firmware provides
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c142a
Abstract: No abstract text available
Text: 3DE D m 7^2^237 QQ31ÔHQ a m S G S - THHOOMMSSOO N [L iC T IiM O ig S Y fi T O D V 1 4 0 —> 1 2 4 0 S-TH0MS0N ALTERNISTORS • di/dt c < 142 A/ms (400 Hz) ■ INSULATING VOLTAGE : 2500 V rms (t < 1 mn - F = 50 Hz) ■ UL RECOGNIZED (EB1734) a2 APPLICATIONS
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c142a
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N TODV 640 — > 1240 ALTERNISTORS FEATURES . HIGH COMMUTATION : > 142 A/ms 400Hz . INSULATING VOLTAGE = 2500V(r m s ) (UL RECOGNIZED : EB1734) . HIGH VOLTAGE CAPABILITY : V D r m = 1200 V DESCRIPTION The TODV 640 —> 1240 use a high performance
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EB1734)
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a3s marking
Abstract: EB1734 T25-17 RD-91 weight 20asp
Text: 3QE ]> V# • 7TSTB37 003103b b ■ SCS TH O M SO N [^DOœiLEKgTr^OIMDOi 1 '¿ S = > -\ TODV 125 / 1225 S 6 S-THOMSON ALTERNISTORS ■ di/dt c > 88 A/ms (400 Hz) ■ INSULATING VOLTAGE : 2500 (t < 1 mn - F = 50 Hz) ■ UL RECOGNIZED (EB1734) V rms a APPLICATIO N S
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003103b
EB1734)
a3s marking
EB1734
T25-17
RD-91 weight
20asp
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alternistors
Abstract: TP 1225 EB1734 SGS 265
Text: SGS-TtiOMSON TO D V 625 — > 1225 ALTERNISTORS FEA TU R ES • HIGH COMMUTATION : > 88 A/ms 400Hz ■ INSULATING VOLTAGE = 2500V(rm S) (UL RECOGNIZED : EB1734) ■ HIGH VOLTAGE CAPABILITY : VDrm = 1200 V DESCRIPTION The TODV 625 —> 1225 use high performance
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400Hz)
EB1734)
alternistors
TP 1225
EB1734
SGS 265
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10MSA
Abstract: TA 555
Text: 3QE ]> • 7^1237 Q031ô3b b ■ 1 / £ Z 7 SGSTHO M SON ^ 7# S s 6 I L iO T M O ig i T O D V 1 2 5 — > 1 2 2 5 S-THOMSON ALTERNISTORS > 88 A/ms 400 Hz ■ INSULATING VOLTAGE : 2500 (t < 1 mn - F = 50 Hz) ■ UL RECOGNIZED (EB1734) ■ ( d i/ d t) c V rms
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EB1734)
10MSA
TA 555
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LM 1240
Abstract: No abstract text available
Text: [Z J S G S -T H O M S O N If f lM ilU lt ê T O W S TO D V 640 — > 1240 ALTERNISTORS FEATURES • HIGH COMMUTATION : > 142 A/ms 400Hz ■ INSULATING VOLTAGE = 2500V(r m s ) (UL RECOGNIZED : EB1734) ■ HIGH VOLTAGE CAPABILITY : VDrm = 1200 V DESCRIPTION
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400Hz)
EB1734)
LM 1240
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TODV1040
Abstract: No abstract text available
Text: S G S -T H O M S O N [L tE ig ra W i T O D V 640 — > 1240 ALTERNISTORS FEATURES • HIGH COMMUTATION : > 142 A/ms 400Hz • INSULATING VOLTAGE = 2500V(rmS) (UL RECOGNIZED : EB1734) . HIGH VOLTAGE CAPABILITY : V Dr m = 1200 V DESCRIPTION The TODV 640 —> 1240 use a high performance
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400Hz)
EB1734)
GD7b033
TODV1040
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Untitled
Abstract: No abstract text available
Text: / = T S G S -T H O M S O N * 7 M, TO DV 625 — > 1225 ALTERNISTORS FEATURES • HIGH COMMUTATION : > 88 A/ms 400Hz ■ INSULATING VOLTAGE = 2500V(rm S) (UL RECOGNIZED : EB1734) . HIGH VOLTAGE CAPABILITY : V DRM = 1200 V DESCRIPTION The TODV 625 —> 1225 use high performance
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400Hz)
EB1734)
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