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    EB SOT23 Search Results

    EB SOT23 Result Highlights (1)

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    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
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    EB SOT23 Price and Stock

    Analog Devices Inc EVAL-6SOT23EBZ

    Switch IC Development Tools Evaluation board i.c.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVAL-6SOT23EBZ
    • 1 $123.77
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    EB SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA2051

    Abstract: TP2051 transistor j147 RES0805 EB-TK2051 50w audio amplifier diagram TC2000 TRIPATH AW600-06-40T-24 CLASS-T DIGITAL AUDIO AMPLIFIER
    Text: Tr i path Technol ogy, I nc. - Technical Information EB-TK2051 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2051 EVALUATION BOARD Technical Information – Board Rev. 1.3 Revision 1.0 – April 2002 GENERAL DESCRIPTION The EB-TK2051 Revision 1.3 is a stereo 50W per channel audio amplifier designed to


    Original     		PDF EB-TK2051 TK2051 EB-TK2051 TK2051, TK2051 CAP0805 CAP200W CAPE\300\700 TA2051 TP2051 transistor j147 RES0805 50w audio amplifier diagram TC2000 TRIPATH AW600-06-40T-24 CLASS-T DIGITAL AUDIO AMPLIFIER

    2.1 home theater circuit diagram

    Abstract: TP2050 TK2050 TC2000 P002B CON2 2pin connector audio amplifier 50w 50v J147 100V rca 3001 transistor AES17
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TK2050 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2050 EVALUATION BOARD Technical Information – Board Rev. 2.1 Revision 1.0 – September 2002 GENERAL DESCRIPTION The EB-TK2050 Revision 2.1 is a stereo 50W per channel audio amplifier designed to


    Original     		PDF EB-TK2050 TK2050 EB-TK2050 TK2050, TK2050 RES0805 P002B 2.1 home theater circuit diagram TP2050 TC2000 CON2 2pin connector audio amplifier 50w 50v J147 100V rca 3001 transistor AES17

    TRIPATH TECHNOLOGY

    Abstract: 400w audio amplifier circuit diagram TAA4100 EB-TAA4100 400w audio amplifier diagram 80w audio amplifier schematic circuit diagram TRIPATH power supply driver led 80W schematic CAP3216 TRIPATH 400W
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TAA4100 CLASS-T DIGITAL AUDIO AMPLIFIER 4 CHANNEL TAA4100 EVALUATION BOARD Technical Information – Board Revision 1.0 Revision 1.1 – October 2004 GENERAL DESCRIPTION The EB-TAA4100 is a 4-channel evaluation board based on the TAA4100 digital audio


    Original     		PDF EB-TAA4100 TAA4100 EB-TAA4100 TAA4100 TAA4100, BSS84CT-ND 67-1342-1-ND TRIPATH TECHNOLOGY 400w audio amplifier circuit diagram 400w audio amplifier diagram 80w audio amplifier schematic circuit diagram TRIPATH power supply driver led 80W schematic CAP3216 TRIPATH 400W

    1J23A

    Abstract: TRIPATH TECHNOLOGY 7G09B-100M TRIPATH 7G09B ECJ-3VB1H104K tripath audio amp circuit T1EX335R ET01SD1CBE TA2041
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TA2041A CLASS-T DIGITAL AUDIO AMPLIFIER 4 CHANNEL TA2041A EVALUATION BOARD Technical Information – Board Revision 3.0 Revision 3.0 – September 2004 GENERAL DESCRIPTION The EB-TA2041A Revision 3.0 is a 4-channel evaluation board based on the TA2041A


    Original     		PDF EB-TA2041A TA2041A EB-TA2041A TA2041A, TA2041A TA2041 1J23A TRIPATH TECHNOLOGY 7G09B-100M TRIPATH 7G09B ECJ-3VB1H104K tripath audio amp circuit T1EX335R ET01SD1CBE

    BSS84CT-ND

    Abstract: CAP3216 IC 7428 datasheet 108-0740-001 TRIPATH TECHNOLOGY PCC104bct-nd cap3528 ET01SD1CBE EB-TA2041 1n4148ws T/R
    Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm at ion EB-TA2041 CLASS-T DIGITAL AUDIO AMPLIFIER 4 CHANNEL TA2041 EVALUATION BOARD Technical Information – Board Revision 2.1 Revision 1.1 – January 2003 GENERAL DESCRIPTION The EB-TA2041 Revision 2.0 is a 4-channel evaluation board based on the TA2041


    Original     		PDF EB-TA2041 TA2041 EB-TA2041 TA2041, TA2041 BSS84CT-ND CAP3216 IC 7428 datasheet 108-0740-001 TRIPATH TECHNOLOGY PCC104bct-nd cap3528 ET01SD1CBE 1n4148ws T/R

    BCW65A

    Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
    Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -


    Original     		PDF BCW65 BCW66 BCW65A13 BCW65B BCW65BR BCW65CR BCW65C BCW65A BCW66F BCW66FR BCW66H BCW65 BCW66G

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 BCW65A, BCW65B BCW65C BCW65A C-120

    TAA2009

    Abstract: TRIPATH EB-TAA2009 rca jacks footprint TRIPATH TECHNOLOGY Tripath Amplifier RC0603JR-0710KL 5015KCT-ND CLASS-T DIGITAL AUDIO AMPLIFIER LED 0805 green
    Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm a ti on EB-TAA2009 2x9W Class-T Digital Audio Amplifier Evaluation Board using Digital Power Processing T M Technology Technical Information- board Rev. 1.7 Revision 1.0- June 2006 GENERAL DESCRIPTION


    Original     		PDF EB-TAA2009 EB-TAA2009 TAA2009, TAA2009. TAA2009 which301-1055 RCJ-012-SMT RCJ-013-SMT J147-ND DS86C TRIPATH rca jacks footprint TRIPATH TECHNOLOGY Tripath Amplifier RC0603JR-0710KL 5015KCT-ND CLASS-T DIGITAL AUDIO AMPLIFIER LED 0805 green

    marking 65B

    Abstract: BCW65A BCW65B BCW65C SMD TRANSISTOR MARKING bw
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 BCW65A, BCW65B BCW65C BCW65A C-120 marking 65B BCW65A BCW65B BCW65C SMD TRANSISTOR MARKING bw

    Untitled

    Abstract: No abstract text available
    Text: BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 65A EA BCW 65B EB BCW 65C EC BCW66F EF BCW 66G EG BCW 66H EH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION


    Original     		PDF BCW65 BCW66 BCW66F BCW67 BCW68 OT-23

    1W 12V ZENER DIODE 1206

    Abstract: resistor 100 Ohm 12V, 1W zener diode 2n7000 smd 1W 10V ZENER DIODE 1N4148 1206 1W 12V ZENER DIODE ZENER DIODES DZ 7 L147uH ZENER DIODES DZ 10
    Text: SP6137 LED EB Schematic for Automotive Application VIN: 12V 10~40V OverVoltage Protection R5 249 1/4W 1206 R3 2.49k 0603 Q3 MMBT2907A 7 5 R2 100 0603 C4 1uF 10V 0603 4 UVIN VCC 6 SS COMP VFB R4 1k 0603 SLIDE-DPST Switch For Independent Control of each Lamp


    Original     		PDF SP6137 MMBT2907A SP6137 BZX84C51 OD-323 1N4148 2N7000 LQH32CN4R7M11 1W 12V ZENER DIODE 1206 resistor 100 Ohm 12V, 1W zener diode 2n7000 smd 1W 10V ZENER DIODE 1N4148 1206 1W 12V ZENER DIODE ZENER DIODES DZ 7 L147uH ZENER DIODES DZ 10

    HG1930

    Abstract: lg s12 MAX2392E MAX2393 max2390 vga balun
    Text: 19-2754; Rev 2; 11/05 KIT ATION EVALU E L B A AVAIL W-CDMA/W-TDD/TD-SCDMA Zero-IF Receivers ♦ Fully Monolithic Direct-Conversion Receivers ♦ Eliminate External IF SAW + IF AGC + I/Q Demod ♦ Meet all 3GPP Receiver’s Standard Requirements with at Least 3dB Margin on Eb/No


    Original     		PDF MAX2393, MAX2401 200kHz-- 20kHz. 60MHz HG1930 lg s12 MAX2392E MAX2393 max2390 vga balun

    2N3904S

    Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 2N3904 ph-13 transistor 1N916 20MS
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES : ICEx=50nA Max. , IBL=50nA(M ax.) V eb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, lB=5mA.


    OCR Scan     		PDF 2N3904S 2N3906S. 60TTER 2N3904S 2N3906S 2N3904S SOT-23 2N3906S SOT-23 2N3904 ph-13 transistor 1N916 20MS

    BFT25

    Abstract: No abstract text available
    Text: Philips Semiconductor! •§ 7 1 1 D fl 5 b 0 0 bT3 Eb 4T3 H PHI N Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 e PINNING 2 NPN transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF low power amplifiers, such as in


    OCR Scan     		PDF 711002b BFT25

    sot-23 MARKING 25J

    Abstract: sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222S KTN2222AS SOT-23
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=10nA M ax. ; V ce=60V, V eb <o f f )=3 V . • Low Saturation Voltage


    OCR Scan     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 sot-23 MARKING 25J sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222AS SOT-23

    KTN2222AS

    Abstract: KTN2222S KTN2222AS SOT-23
    Text: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.


    OCR Scan     		PDF KTN2222S/AS 15QmA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 KTN2222AS KTN2222AS SOT-23

    KN3903S

    Abstract: KN3905S
    Text: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current : ICEx=50nA Max. , @ VCe =30V, V eb =3V. • Low Saturation Voltage


    OCR Scan     		PDF KN3903S KN3905S. KN3903S KN3905S

    KN3904S

    Abstract: KN3906S
    Text: SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J K L M N P • Low Leakage Current : IcE x=-50nA M ax. @ VCe =-30V , V eb = -3V . • Low Saturation Voltage


    OCR Scan     		PDF KN3906S -50nA -50mA, KN3904S. KN3904S KN3906S

    ZAA SOT-23

    Abstract: KN3904S KN3906S zaa 04 ZAA SOT23
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current A B C D E G H J K L M N P : IcEx=-50nA Max. @ VCe =-30V , V eb =-3V .


    OCR Scan     		PDF KN3906S -50mA, KN3904S. ZAA SOT-23 KN3904S KN3906S zaa 04 ZAA SOT23

    ECG2406

    Abstract: ECG399 resistor 47k mp sot 23 ECG2364 ECG2368 resistor 4.7k SP SOT23 ECG2363 ECG2366
    Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Basa Volts bvcbo Collector To Emitter Volts bv C eo Basa to Emitter Volts Max. Collector Current I j Amps b v eb o Max. Device Diss. PD


    OCR Scan     		PDF ECG2363 ECG2364) O-92M ECG2364 ECG2363) ECG2386 T48-2 ECG2366 ECG399) ECG2406 ECG399 resistor 47k mp sot 23 ECG2368 resistor 4.7k SP SOT23

    MMBTH11

    Abstract: MMBTH24 MMBT5179 MMBT918 MMBTH10 MMBTH20 MMBTH34
    Text: This Surface Mount Transistors Material IT a fc-> In b-> ÜÜ □ Surface Mount Transistors NPN RF Amplifiers and Oscillators Case Style ^CBO V CEO ^ EB O V (V) (V) Min Min Min *CBO V <nA)@ “ Max 'v' h FE @ ‘c & .- . Device No. (SOT-23 Mark) ^ JJ


    OCR Scan     		PDF OT-23 MMBT5179 O-236 MMBTH10 MMBT918 MMBTH11 650mA) MMBTH11 MMBTH24 MMBT5179 MMBT918 MMBTH10 MMBTH20 MMBTH34

    2N3906S SOT-23

    Abstract: 2N3904S 2N3904S SOT-23 2N3906S 1N916
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J • Low Leakage Current : IcEx=-50nA Max. , lBL=~50nA(Max.) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.


    OCR Scan     		PDF 2N3906S -50nA -50mA, 2N3904S. 300ns 1N916 20/xs 300//S, 2N3906S SOT-23 2N3904S 2N3904S SOT-23 2N3906S 1N916

    KN3903S

    Abstract: KN3905S
    Text: SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V . • Low Saturation Voltage : V cE (sat)=0.3V (M ax.)


    OCR Scan     		PDF KN3903S KN3905S. KN3903S KN3905S

    CW65

    Abstract: No abstract text available
    Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -


    OCR Scan     		PDF BCW65 BCW66 CW65