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    EAS 46 Search Results

    EAS 46 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HMC871LC5 Analog Devices EA Optical Mod Driver SMT, DC Visit Analog Devices Buy
    HMC871LC5TR-R5 Analog Devices EA Optical Mod Driver SMT, DC Visit Analog Devices Buy
    HMC871LC5TR Analog Devices EA Optical Mod Driver SMT, DC Visit Analog Devices Buy
    LTC2487IDE#PBF Analog Devices 16-B 2-/4-Ch DS ADC w/ PGA, Ea Visit Analog Devices Buy
    LTC2487CDE#TRPBF Analog Devices 16-B 2-/4-Ch DS ADC w/ PGA, Ea Visit Analog Devices Buy
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    EAS 46 Price and Stock

    Analog Devices Inc MAX33046EASA+

    RS-422/RS-485 Interface IC 20Mbps, Half-Duplex RS-485/RS-422 Transceivers with 40kV ESD Protection
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MAX33046EASA+ 9,393
    • 1 $4.3
    • 10 $3.29
    • 100 $2.75
    • 1000 $2.2
    • 10000 $2.07
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    Analog Devices Inc MAX33046EASA+T

    RS-422/RS-485 Interface IC 20Mbps, Half-Duplex RS-485/RS-422 Transceivers with 40kV ESD Protection
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MAX33046EASA+T 993
    • 1 $4.61
    • 10 $3.3
    • 100 $2.76
    • 1000 $2.21
    • 10000 $2.06
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    pico Technology PicoSource AS108

    Datalogging & Acquisition PicoSource AS108 8GHz Agile Synthesizer
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PicoSource AS108 2
    • 1 $6465
    • 10 $6465
    • 100 $6465
    • 1000 $6465
    • 10000 $6465
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    NMB Technologies Corporation 11925SA-24N-EA-D0

    Tubeaxial Fan - 24VDC - Square 119mm L x 119mm H - Ball Bearing - 91.0 CFM (2.55m³/min) - 37.0dB - 2.64 W - 2500 RPM - 2 Wire Leads.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 11925SA-24N-EA-D0 46
    • 1 -
    • 10 $16.15
    • 100 $13.55
    • 1000 $12.52
    • 10000 $11.83
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    ASSMANN WSW components GmbH A-BL200-EA-G13D

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com A-BL200-EA-G13D
    • 1 -
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    • 1000 $0.969
    • 10000 $0.949
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    Find more EAS 46 price and stock on Findchips.com

    EAS 46 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6ES5 441-7LA11

    Abstract: 451-7LA11 6ES5 420-7LA11 441-7LA11 6ES5 451-7LA11 siemens s5 S5-115U 420-7LA11 6ES5 430-7LA11 6ES5 siemens
    Text: Interface System passive interfaces passive interfaces for S5-115U Digital I/O Dimensions mm : W x H x D 128.5 x 80 x 61 Approvals: Description Digital I/O with LED Digital I/O without LED Type EAS-UE/D-L-115 EAS-UE/D-115 Wiring diagrams, dimensions See page 571


    Original     		PDF S5-115U EAS-UE/D-L-115 EAS-UE/D-115 8191E 6ES5 441-7LA11 451-7LA11 6ES5 420-7LA11 441-7LA11 6ES5 451-7LA11 siemens s5 S5-115U 420-7LA11 6ES5 430-7LA11 6ES5 siemens

    OM55N10NK

    Abstract: OM60N10NK OM75N05NK OM75N06NK
    Text: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRHM7054, IRHM8054 Devices Pre-Irradiation  Repetitive Rating; Pulse width limited by … Total Dose Irradiation with VGS Bias. maximum junction temperature. Refer to current HEXFET reliability report. ‚ @ VDD = 25V, Starting TJ = 25°C, EAS = [0.5 * L * IL2 ]


    Original     		PDF O-254AA O-254AA MIL-PRF-19500

    mur 460 data

    Abstract: MUR460 BL MUR405 MUR460 mur 600
    Text: BL GALAXY ELECTRICAL MUR405 - - - MUR460 VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A SUPER FAST RECT IFIER FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents


    Original     		PDF MUR405 MUR460 DO--27 STD-202 mur 460 data MUR460 BL MUR460 mur 600

    MUR460 BL

    Abstract: mur 460 data mur 600 MUR450 MUR 460 MUR405 MUR460 MUR420-MUR450
    Text: BL GALAXY ELECTRICAL MUR405 - MUR460 VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A SUPER FAST RECT IFIER FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents


    Original     		PDF MUR405 MUR460 DO--27 STD-202 MUR405-MUR415 MUR460 BL mur 460 data mur 600 MUR450 MUR 460 MUR460 MUR420-MUR450

    a1s package

    Abstract: 182T2 block diagram of VCD block diagram of VCD and its functions cyclic redundancy check LRI512 ISO15693 1 out of 4 inventory request CRC16 ISO15693 LRI512 ISO10373-7
    Text: LRI512 ISO 15693 standard compliant, 13.56 MHz, 512 bit, high-endurance EEPROM TAG IC with EAS Not For New Design Features • ISO 15693 standard: fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■ To the LRI512: – 10% or 100% ASK modulation using:


    Original     		PDF LRI512 LRI512: 64-bit a1s package 182T2 block diagram of VCD block diagram of VCD and its functions cyclic redundancy check LRI512 ISO15693 1 out of 4 inventory request CRC16 ISO15693 LRI512 ISO10373-7

    182T2

    Abstract: CRC16 ISO15693 LRI512 ISO103
    Text: LRI512 ISO 15693 standard compliant, 13.56 MHz, 512 bit, high-endurance EEPROM TAG IC with EAS Not For New Design Features • ISO 15693 standard: fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■ To the LRI512: – 10% or 100% ASK modulation using:


    Original     		PDF LRI512 LRI512: 64-bit 32-bit 182T2 CRC16 ISO15693 LRI512 ISO103

    Amphenol ecomate Assembly instructions

    Abstract: DIN EN 60999-1 circular connector C016 C16-1 EN 60352 c01610d003
    Text: Amphenol Amphenol-Tuchel Electronics GmbH Circular Connectors ier eas an se m o as t r e uick dq |mate by Amphenol bl e The Company Amphenol-Tuchel Electronics GmbH is a member of the USA based Amphenol Corporation. With our own global presence we offer our customers exceptional


    Original     		PDF D-74080 Amphenol ecomate Assembly instructions DIN EN 60999-1 circular connector C016 C16-1 EN 60352 c01610d003

    UC 493

    Abstract: IFP50N06
    Text: IFP50N06 N-Channel MOSFET Features • RDS on (Max 0.023 Ω)@VGS=10V • Gate Charge (Typical 25nC) • Maximum Junction Temperature Range (175 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)


    Original     		PDF IFP50N06 300us, IFP50N06-TSe UC 493 IFP50N06

    mur 460 data

    Abstract: MURS405-MURS460 mur 600 mur 1250 Mur 460
    Text: MURS405-MURS460 Surface Mount Rectifiers VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A SMC DO-214AB Features 7.5± 0.25 Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents 5.8± 0.3 3.0± 0.15 Low cos t


    Original     		PDF MURS405-MURS460 DO-214AB) load100 430-MUR 405-MUR mur 460 data MURS405-MURS460 mur 600 mur 1250 Mur 460

    FKv550n

    Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)


    Original     		PDF 2SK2701A 2SK2778 2SK2779 2SK2803 O-220S 95MAX FKv550n FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711

    fkp*253

    Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS


    Original     		PDF 2SK1179 2SK1183 2SK1188 2SK2419 2SK2420 2SK2701 2SK2702* 2SK2704 2SK2707* 2SK2709 fkp*253 fkv550n FKV550T FKP280 2SK2710a fkv550

    IFP2N60

    Abstract: No abstract text available
    Text: IFP/IFD/IFU2N60 N-Channel MOSFET Features • RDS on (Max 5.0 Ω)@VGS=10 V • Gate Charge (Typical 9.5 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG TJ Notes Parameter Drain to Source Voltage


    Original     		PDF IFP/IFD/IFU2N60 300us, IFP2N60-TSe IFP2N60

    2SK2701A

    Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)


    Original     		PDF 2SK2420 2SK2701A 2SK2803 2SK2848 2SK2943 2SK3003 2SK3004 2SK3199 2SK3710 2SK3711 FKv550n 2SK3801 fkv575

    2sk30

    Abstract: FKv550n 2SK3003 2SK3199 2SK2778
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)


    Original     		PDF 2SK2420 2SK2701A 2SK2778 2SK2779 2SK2803 2SK2848 2SK2943 2SK3003 2SK3004 2SK3199 2sk30 FKv550n

    diode code v3c

    Abstract: No abstract text available
    Text: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ


    Original     		PDF VS-30BQ015PbF J-STD-020, 2002/95/EC VS-30BQ015PbF 11-Mar-11 diode code v3c

    Untitled

    Abstract: No abstract text available
    Text: POW ER Y TO US EAS E BL E Advanced Multi-GNSS Simulator FUTURE PROOF L FU GSG-6 Series AFF O R D A Upgradable to all constellations and signals • Multi-GNSS, Multi-Frequency Simulator • GPS standard, new L2C, L5 GLONASS, Galileo, and BeiDou • Simultaneous multi-frequency P-code


    Original     		PDF MIL-PRF-28800F,

    IFP75N08-TSe

    Abstract: IFP75N08
    Text: IFP75N08 N-Channel MOSFET Features • RDS on (Max 0.015 Ω)@VGS=10V • Gate Charge (Typical 80 nC) • Maximum Junction Temperature Range (175 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)


    Original     		PDF IFP75N08 300us, IFP75N08-TSe IFP75N08

    TRANSISTOR 187

    Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
    Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60


    Original     		PDF 2SJ424 2SJ425 2SK1177 2SK1179 2SK1180 2SK1181 2SK1183 2SK1184 2SK1185 2SK1186 TRANSISTOR 187 fkv550 2sk2943 2SK3460 2SK2710a 2SK3724

    diode v3c

    Abstract: marking v3c
    Text: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ


    Original     		PDF VS-30BQ015PbF J-STD-020, 2002/95/EC VS-30BQ015PbF 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 diode v3c marking v3c

    Untitled

    Abstract: No abstract text available
    Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G  D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS


    Original     		PDF 85N60C O-264 E72873 ID100 20100315c

    Untitled

    Abstract: No abstract text available
    Text: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ


    Original     		PDF VS-30BQ015PbF J-STD-020, 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode code v3c

    Abstract: marking v3c
    Text: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ


    Original     		PDF VS-30BQ015PbF J-STD-020, 2002/95/EC VS-30BQ015PbF 11-Mar-11 diode code v3c marking v3c

    mur 460 data

    Abstract: MUR460 DO-27 mur 600
    Text: MUR405-MUR460 Super Fast Rectifiers VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A Features DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0


    Original     		PDF MUR405-MUR460 DO--27 STD-202 430-MUR460 MUR405-MUR420 mur 460 data MUR460 DO-27 mur 600