60QC03
Abstract: 60QC03L EA60QC03L EA60QC03L-F EA60QC03 0-30G
Text: SBD Type : EA60QC03 EA60QC03L 60QC03L-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mount Device * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available * Packaged in 16mm Tape and Reel
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EA60QC03L
EA60QC03L-F
60QC03
O-252AA
20x20
EA60QC03L-F
60QC03
60QC03L
EA60QC03L
EA60QC03
0-30G
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60qc03l
Abstract: EA60QC03L
Text: SBD Type : EA60QC03L EA60QC03L OUTLINE DRAWING FEATURES * TO-251AA Case * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available Maximum Ratings Approx Net Weight:0.35g Rating
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EA60QC03L
O-251AA
20x20
EA60QC03L
60qc03l
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EA60QC03L
Abstract: No abstract text available
Text: SBD Type : EA60QC03L EA60QC03L OUTLINE DRAWING FEATURES * TO-251AA Case * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available Maximum Ratings Approx Net Weight:0.35g Rating
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EA60QC03L
O-251AA
20x20mm)
EA60QC03L/EA60QC03L-F
EA60QC03L
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60QC03L
Abstract: EA60QC03L EA60QC03 EA60QC03L-F
Text: SBD Type : EA60QC03 EA60QC03L 60QC03L-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mount Device * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available * Packaged in 16mm Tape and Reel
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EA60QC03L
EA60QC03L-F
60QC03
O-252AA
20x20mm)
EA60QC03L/EA60QC03L-F
60QC03L
EA60QC03L
EA60QC03
EA60QC03L-F
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V30010
Abstract: EA60QC03L
Text: 6A Avg. 30 Volts SBD EA60QC03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage P.C.Board 平 均 整 流 電 流 mounted＊ Average Rectified Forward Current
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EA60QC03L
Tc111
EA60QC03L/EA60QC03L-F
V30010
EA60QC03L
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60QC03L
Abstract: No abstract text available
Text: SBD Type : EA60QC03 EA60QC03L 60QC03L-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mount Device * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available * Packaged in 16mm Tape and Reel
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EA60QC03
EA60QC03L
60QC03L-F
O-252AA
EA60QC03L-F
20x20mm)
EA60QC03L/EA60QC03L-F
60QC03L
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Untitled
Abstract: No abstract text available
Text: SBD Type : EA60QC03L EA60QC03L OUTLINE DRAWING FEATURES * TO-251AA Case * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available Maximum Ratings Approx Net Weight:0.35g Rating
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EA60QC03L
EA60QC03L
O-251AA
20x20mm)
EA60QC03L/EA60QC03L-F
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Untitled
Abstract: No abstract text available
Text: 6A Avg. 30 Volts SBD EA60QC03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage P.C.Board 平 均 整 流 電 流 mounted＊ Average Rectified Forward Current
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EA60QC03L
EA60QC03L/EA60QC03L-F
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Untitled
Abstract: No abstract text available
Text: 6A Avg. 30 Volts SBD EA60QC03L-F •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage P.C.Board 平 均 整 流 電 流 mounted＊ Average Rectified Forward Current
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EA60QC03L-F
EA60QC03L/EA60QC03L-F
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EA60QC03L-F
Abstract: No abstract text available
Text: 6A Avg. 30 Volts SBD EA60QC03L-F •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage P.C.Board 平 均 整 流 電 流 mounted＊ Average Rectified Forward Current
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EA60QC03L-F
Tc111
EA60QC03L/EA60QC03L-F
EA60QC03L-F
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60QC03L
Abstract: plint
Text: SBD Type：EA60Q EA60QC 60QC03L •OUTLINE DRAWING 構造 ： ショットキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings
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TypeEA60Q
EA60QC
60QC03L
EA60QC03L
20x20mm)
EA60QC03L/EA60QC03L-F
60QC03L
plint
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60qc03l
Abstract: No abstract text available
Text: SBD Type：EA60Q EA60QC 60QC03L03L-F •OUTLINE DRAWING 構造 ：表面実装型ショットキバリアダイオード S B D Construction: Surface Mounting, Schottky Barrie Diode 用途 ：高周波整流用 Application : High Frequency Rectification
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TypeEA60Q
EA60QC
60QC03L03L-F
EA60QC03LF
20x20mm)
EA60QC03L/EA60QC03L-F
60qc03l
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60qc03l
Abstract: No abstract text available
Text: SBD Type：EA60Q EA60QC 60QC03L •OUTLINE DRAWING 構造 ： ショットキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings
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TypeEA60Q
EA60QC
60QC03L
EA60QC03L
20x20mm)
EA60QC03L/EA60QC03L-F
60qc03l
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tc122 20 5 3
Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85
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O-251
EA20QS04
EA20QS06
EA20QS09
EA20QS10
ESL03B03
EA30QS03L
EA30QS04
EA30QS06
EA30QS09
tc122 20 5 3
tc 122 25 5
tc122 25
TC-138
tc122
tc122 25 4
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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sony flyback transformer
Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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60qc03l
Abstract: No abstract text available
Text: SBD Type：EA60Q EA60QC 60QC03L03L-F •OUTLINE DRAWING 構造 ：表面実装型ショットキバリアダイオード S B D Construction: Surface Mounting, Schottky Barrie Diode 用途 ：高周波整流用 Application : High Frequency Rectification
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TypeEA60Q
EA60QC
60QC03L03L-F
EA60QC03LF
60qc03l
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60qc03l
Abstract: No abstract text available
Text: SBD Type：EA60Q EA60QC 60QC03L •OUTLINE DRAWING 構造 ： ショットキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings
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TypeEA60Q
EA60QC
60QC03L
EA60QC03L
60qc03l
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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C8816
Abstract: pj999 C8813 c8980 C8815 C8850 C8819 C8817 IC8900 D8822
Text: Engineer INVENTEC Engr_Name Drawn by Drawer_Name R&D CHK FMNPS1-[CS] DOC CTRL CHK MFG ENGR CHK Changed by TSB1 Date Changed Thursday, January 10, 2002 Time Changed 3:00:37 pm QA CHK Size TITLE [PS] SPEC SHEET VER 000 Model Number Model_No Sheet 200 of A3 PVDC
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G36010116202
Q8901
G36410121028
C8802
R8821
C8805
G36030029056
220nF
G36030109109
G36010116103
C8816
pj999
C8813
c8980
C8815
C8850
C8819
C8817
IC8900
D8822
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L9150
Abstract: L9101 L9100 c9015 D9150 ic905 C9013 S3V 83 IC-9002 INVENTEC FMNSY2-VP
Text: Engineer INVENTEC Engr_Name Drawn by Drawer_Name R&D CHK MFG ENGR CHK Changed by Date Changed Friday, February 22, 2002 Time Changed 3:26:25 pm QA CHK A3 FMNSY2-VP DOC CTRL CHK TSB1 Size TITLE BLOCK DIAGRAM VER 110 Model Number Model_No Sheet of P3V 1/16W
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1/16W
950805BGT
G36010116158
G36010119012
G36010116097
GDM010000035
G36030029124
G36030011099
L9150
L9101
L9100
c9015
D9150
ic905
C9013
S3V 83
IC-9002
INVENTEC FMNSY2-VP
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EIAJ ED-4701 B-121
Abstract: 200V 50A mos fet 1N538 ICF-SW77 31DF2 sony icf FCF10A20 FCH10A15 FSF10A60 LM317
Text: 목차 다이오드 — 노이즈와 전원 효율 참고 정류 노이즈 3 시리즈 SBD SBD 와 열폭주 1 고속 다이오드란 2 FRD 와 SBD 3 응용 회로와 니혼인터 SBD/FRD 4 역회복 특성 4-1 역회복 특성의 파형 상의 정의 4-2 역회복 특성 측정 회로
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1N538
O-220
O-247
Sn-37Pb
1030s
EIAJ ED-4701 B-121
200V 50A mos fet
ICF-SW77
31DF2
sony icf
FCF10A20
FCH10A15
FSF10A60
LM317
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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