EA30QS03L
Abstract: No abstract text available
Text: 3A Avg. 30 Volts SBD EA30QS03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 実
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EA30QS03L
Tc126
EA30QS03L/EA30QS03L-F
EA30QS03L
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Untitled
Abstract: No abstract text available
Text: SBD Type：EA30QS03L EA30QS03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings
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TypeEA30QS03L
EA30QS03L
20x20mm)
EA30QS03L/EA30QS03L-F
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 30 Volts SBD EA30QS03L-F •OUTLINE DRAWING mm ■最大定格 Maximum Ratings Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 実
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EA30QS03L-F
EA30QS03L/EA30QS03L-F
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EA30QS03L
Abstract: No abstract text available
Text: SBD Type : EA30QS03L EA30QS03L OUTLINE DRAWING FEATURES * TO-251AA Case * Extremely Low Forward Voltage drop * Low Power Loss, High Ecciciency * High Surge Capability Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current
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EA30QS03L
O-251AA
20x20mm)
EA30QS03L/EA30QS03L-F
EA30QS03L
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 30 Volts SBD EA30QS03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 IO 実 効 順 電 流 R.M.S. Forward Current サ ー ジ 順 電
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EA30QS03L
EA30QS03L/EA30QS03L-F
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Untitled
Abstract: No abstract text available
Text: SBD Type：EA30QS03L EA30QS03L30QS03L-F •OUTLINE DRAWING 構造 ：表面実装型ショットキバリアダイオード S B D Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification
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TypeEA30QS03L
EA30QS03L30QS03L-F
EA30QS03LF
20x20mm)
EA30QS03L/EA30QS03L-F
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EA30QS03L-F
Abstract: No abstract text available
Text: 3A Avg. 30 Volts SBD EA30QS03L-F •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 実
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EA30QS03L-F
Ta126
EA30QS03L/EA30QS03L-F
EA30QS03L-F
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Untitled
Abstract: No abstract text available
Text: SBD Type : EA30QS03L EA30QS03L30QS03L-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mounting Device * Extremely Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * Packaged in 16mm Tape and Reel Maximum Ratings Rating
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EA30QS03L
EA30QS03L30QS03L-F
O-252AA
EA30QS03L-F
20x20mm)
EA30QS03L/EA30QS03L-F
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Untitled
Abstract: No abstract text available
Text: SBD Type：EA30QS03L EA30QS03L30QS03L-F •OUTLINE DRAWING 構造 ：表面実装型ショットキバリアダイオード S B D Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification
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TypeEA30QS03L
EA30QS03L30QS03L-F
EA30QS03LF
20x20mm)
EA30QS03L/EA30QS03L-F
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 30 Volts SBD EA30QS03L-F •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 実
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EA30QS03L-F
EA30QS03L/EA30QS03L-F
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Untitled
Abstract: No abstract text available
Text: SBD Type：EA30QS03L EA30QS03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings
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TypeEA30QS03L
EA30QS03L
20x20mm)
EA30QS03L/EA30QS03L-F
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Untitled
Abstract: No abstract text available
Text: SBD Type : EA30QS03L EA30QS03L OUTLINE DRAWING FEATURES * TO-251AA Case * Extremely Low Forward Voltage drop * Low Power Loss, High Ecciciency * High Surge Capability Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current
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EA30QS03L
EA30QS03L
O-251AA
20x20mm)
EA30QS03L/EA30QS03L-F
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EA30QS03L-F
Abstract: EA30QS03L
Text: SBD Type : EA30QS03L EA30QS03L30QS03L-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mounting Device * Extremely Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * Packaged in 16mm Tape and Reel Maximum Ratings Rating
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EA30QS03LEA30QS03L-F
30QS03L
O-252AA
EA30QS03L-F
20x20mm)
EA30QS03L/EA30QS03L-F
EA30QS03L-F
EA30QS03L
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tc122 20 5 3
Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85
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O-251
EA20QS04
EA20QS06
EA20QS09
EA20QS10
ESL03B03
EA30QS03L
EA30QS04
EA30QS06
EA30QS09
tc122 20 5 3
tc 122 25 5
tc122 25
TC-138
tc122
tc122 25 4
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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