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    EA TRANSISTOR TRANSISTOR Search Results

    EA TRANSISTOR TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    EA TRANSISTOR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCW65A

    Abstract: BCW65B BCW65C transistor 556 smd
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA


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    PDF OT-23 BCW65A, BCW65B BCW65C BCW65A C-120 BCW65A BCW65B BCW65C transistor 556 smd

    marking 65B

    Abstract: BCW65A BCW65B BCW65C SMD TRANSISTOR MARKING bw
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    PDF OT-23 BCW65A, BCW65B BCW65C BCW65A C-120 marking 65B BCW65A BCW65B BCW65C SMD TRANSISTOR MARKING bw

    BC pnp 200mA

    Abstract: 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 2SA1213 RN5RG30A RN5RG50A RN5RG50AA-TR
    Text: VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR NO. EA-020-0204 RN5RG SERIES OUTLINE The RN5RG Series are CMOS-based voltage regulator ICs with an external power transistor with high output voltage accuracy and lowest supply current. Each of these voltage regulator ICs consists of a voltage reference


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    PDF EA-020-0204 OT-23-5 RN5RG50A 100mA 2SA1213 BC pnp 200mA 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 2SA1213 RN5RG30A RN5RG50AA-TR

    Untitled

    Abstract: No abstract text available
    Text: VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR NO. EA-020-130521 RN5RG SERIES OUTLINE The RN5RG Series are CMOS-based voltage regulator ICs with an external power transistor with high output voltage accuracy and lowest supply current. Each of these voltage regulator ICs consists of a voltage reference


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    PDF EA-020-130521 OT-23-5 Room403, Room109, 10F-1,

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se


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    PDF XN04390 UNR212X UN212X) UNR2223 UN2223)

    Untitled

    Abstract: No abstract text available
    Text: R5527K SERIES 3A Load Switch IC NO. EA-312-130122 OUTLINE The R5527K Series are N-channel load switch ICs with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state


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    PDF R5527K EA-312-130122 1612-4D Room403, Room109,

    12-CE 519

    Abstract: 2569s
    Text: R5540K SERIES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state


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    PDF R5540K EA-268-111028 R5540 1010-4F, Room403, Room109, 12-CE 519 2569s

    Untitled

    Abstract: No abstract text available
    Text: R5527K SERIES 3A Load Switch IC NO. EA-312-140124 OUTLINE The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state are realized.


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    PDF R5527K EA-312-140124 1612-4D Room403, Room109, 10F-1,

    2sa198

    Abstract: 2SC5344S 2SA1981S
    Text: 2SA1981S Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S Ordering Information Type NO. Marking 2SA1981S Package Code SOT-23 EA : hFE rank Outline Dimensions


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    PDF 2SA1981S 2SC5344S OT-23 KST-2005-001 -500mA, -20mA -100mA 2sa198 2SC5344S 2SA1981S

    2SA1981SF

    Abstract: Transistor 2SC5344SF
    Text: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions


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    PDF 2SA1981SF 2SC5344SF OT-23F KST-2067-001 2SA1981SF Transistor 2SC5344SF

    2SA1981SF

    Abstract: 2SC5344SF
    Text: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions


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    PDF 2SA1981SF 2SC5344SF OT-23F KST-2067-001 -500mA, -20mA -100mA 2SA1981SF 2SC5344SF

    STA1298

    Abstract: STC3265
    Text: STA1298 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with STC3265 Ordering Information Type NO. Marking STA1298 Package Code SOT-23 EA : hFE rank Outline Dimensions


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    PDF STA1298 STC3265 OT-23 KST-2020-000 -500mA, -20mA -100mA STA1298 STC3265

    2SA1981SF

    Abstract: 2SC5344SF
    Text: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power amplifier application 3 Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF 1 2 Ordering Information Type NO. 2SA1981SF Marking SOT-23F Package Code EA □ □


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    PDF 2SA1981SF 2SC5344SF OT-23F KSD-T5C082-000 2SA1981SF 2SC5344SF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS


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    PDF OT-23 BCW65A, BCW65B BCW65C BCW65A C-120

    Untitled

    Abstract: No abstract text available
    Text: R5 5 4 0 K SERI ES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state


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    PDF EA-268-111028 R5540 1010-4F, Room403, Room109, 10F-1,

    EA SOT-23

    Abstract: 2SA1981S 2SC5344S
    Text: 2SA1981S PNP Silicon Transistor Description PIN Connection • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S C B E Ordering Information Type No. 2SA1981S SOT-23 Marking Package Code EA □ □ ① ②


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    PDF 2SA1981S 2SC5344S OT-23 KSD-T5C021-000 EA SOT-23 2SA1981S 2SC5344S

    max6032

    Abstract: BCW65B BCW65C BCW65A
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 . 02 _ 0.89


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    PDF BCW65A, BCW65B BCW65C BCW65A BCW65B BCW65A 35-Vce max6032 BCW65C

    marking 65B

    Abstract: BCW65B BCW65A BCW65C
    Text: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _


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    PDF BCW65A, BCW65B BCW65C BCW65A BCW65B marking 65B BCW65A BCW65C

    BCW65A

    Abstract: BCW65B BCW65C
    Text: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor M arking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _


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    PDF BCW65A, BCW65B BCW65C BCW65A BCW65A BCW65B BCW65C

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 2.6 Pin configuration 1.4 1.2 2.4 R0.1 ÔômT 1 = BASE 2 = EMITTER


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    PDF BCW65A, BCW65B BCW65C BCW65A BCW65B

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C •IL GENERAL PURPOSE TRANSISTOR N -P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking BCW65A = EA BCW65B = EB BCW65C = EC 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR I J 1.02


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    PDF BCW65A, BCW65B BCW65C BCW65A

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR


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    PDF BCW65A, BCW65B BCW65C BCW65A

    transistor IRG4BC10UD

    Abstract: IRG4BC10UD
    Text: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4BC10UD transistor IRG4BC10UD IRG4BC10UD

    dionics

    Abstract: MO chip Transistor Monolithic Transistor Pair NPN Monolithic Transistor Pair
    Text: Detailed S pecifications on Reverás Sido, Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 •4880 Dl 4045-1 □IONICS INC. ea flufiHMOlif St. wf fiifiuar. n.y. 11360 3iB-i9TT74f< NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100*. PROBED


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