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    EA TRANSISTOR TRANSISTOR Search Results

    EA TRANSISTOR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3127MZ Rochester Electronics CA3127 - Transistor Array Visit Rochester Electronics Buy

    EA TRANSISTOR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCW65A

    Abstract: BCW65B BCW65C transistor 556 smd
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA


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    OT-23 BCW65A, BCW65B BCW65C BCW65A C-120 BCW65A BCW65B BCW65C transistor 556 smd PDF

    marking 65B

    Abstract: BCW65A BCW65B BCW65C SMD TRANSISTOR MARKING bw
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    OT-23 BCW65A, BCW65B BCW65C BCW65A C-120 marking 65B BCW65A BCW65B BCW65C SMD TRANSISTOR MARKING bw PDF

    BC pnp 200mA

    Abstract: 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 2SA1213 RN5RG30A RN5RG50A RN5RG50AA-TR
    Text: VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR NO. EA-020-0204 RN5RG SERIES OUTLINE The RN5RG Series are CMOS-based voltage regulator ICs with an external power transistor with high output voltage accuracy and lowest supply current. Each of these voltage regulator ICs consists of a voltage reference


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    EA-020-0204 OT-23-5 RN5RG50A 100mA 2SA1213 BC pnp 200mA 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 2SA1213 RN5RG30A RN5RG50AA-TR PDF

    Untitled

    Abstract: No abstract text available
    Text: VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR NO. EA-020-130521 RN5RG SERIES OUTLINE The RN5RG Series are CMOS-based voltage regulator ICs with an external power transistor with high output voltage accuracy and lowest supply current. Each of these voltage regulator ICs consists of a voltage reference


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    EA-020-130521 OT-23-5 Room403, Room109, 10F-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se


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    XN04390 UNR212X UN212X) UNR2223 UN2223) PDF

    Untitled

    Abstract: No abstract text available
    Text: R5527K SERIES 3A Load Switch IC NO. EA-312-130122 OUTLINE The R5527K Series are N-channel load switch ICs with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state


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    R5527K EA-312-130122 1612-4D Room403, Room109, PDF

    12-CE 519

    Abstract: 2569s
    Text: R5540K SERIES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state


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    R5540K EA-268-111028 R5540 1010-4F, Room403, Room109, 12-CE 519 2569s PDF

    Untitled

    Abstract: No abstract text available
    Text: R5527K SERIES 3A Load Switch IC NO. EA-312-140124 OUTLINE The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state are realized.


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    R5527K EA-312-140124 1612-4D Room403, Room109, 10F-1, PDF

    2sa198

    Abstract: 2SC5344S 2SA1981S
    Text: 2SA1981S Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S Ordering Information Type NO. Marking 2SA1981S Package Code SOT-23 EA : hFE rank Outline Dimensions


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    2SA1981S 2SC5344S OT-23 KST-2005-001 -500mA, -20mA -100mA 2sa198 2SC5344S 2SA1981S PDF

    2SA1981SF

    Abstract: Transistor 2SC5344SF
    Text: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions


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    2SA1981SF 2SC5344SF OT-23F KST-2067-001 2SA1981SF Transistor 2SC5344SF PDF

    2SA1981SF

    Abstract: 2SC5344SF
    Text: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions


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    2SA1981SF 2SC5344SF OT-23F KST-2067-001 -500mA, -20mA -100mA 2SA1981SF 2SC5344SF PDF

    STA1298

    Abstract: STC3265
    Text: STA1298 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with STC3265 Ordering Information Type NO. Marking STA1298 Package Code SOT-23 EA : hFE rank Outline Dimensions


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    STA1298 STC3265 OT-23 KST-2020-000 -500mA, -20mA -100mA STA1298 STC3265 PDF

    2SA1981SF

    Abstract: 2SC5344SF
    Text: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power amplifier application 3 Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF 1 2 Ordering Information Type NO. 2SA1981SF Marking SOT-23F Package Code EA □ □


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    2SA1981SF 2SC5344SF OT-23F KSD-T5C082-000 2SA1981SF 2SC5344SF PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS


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    OT-23 BCW65A, BCW65B BCW65C BCW65A C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: R5 5 4 0 K SERI ES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state


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    EA-268-111028 R5540 1010-4F, Room403, Room109, 10F-1, PDF

    EA SOT-23

    Abstract: 2SA1981S 2SC5344S
    Text: 2SA1981S PNP Silicon Transistor Description PIN Connection • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S C B E Ordering Information Type No. 2SA1981S SOT-23 Marking Package Code EA □ □ ① ②


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    2SA1981S 2SC5344S OT-23 KSD-T5C021-000 EA SOT-23 2SA1981S 2SC5344S PDF

    max6032

    Abstract: BCW65B BCW65C BCW65A
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 . 02 _ 0.89


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    BCW65A, BCW65B BCW65C BCW65A BCW65B BCW65A 35-Vce max6032 BCW65C PDF

    marking 65B

    Abstract: BCW65B BCW65A BCW65C
    Text: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _


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    BCW65A, BCW65B BCW65C BCW65A BCW65B marking 65B BCW65A BCW65C PDF

    BCW65A

    Abstract: BCW65B BCW65C
    Text: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor M arking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _


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    BCW65A, BCW65B BCW65C BCW65A BCW65A BCW65B BCW65C PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 2.6 Pin configuration 1.4 1.2 2.4 R0.1 ÔômT 1 = BASE 2 = EMITTER


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    BCW65A, BCW65B BCW65C BCW65A BCW65B PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C •IL GENERAL PURPOSE TRANSISTOR N -P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking BCW65A = EA BCW65B = EB BCW65C = EC 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR I J 1.02


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    BCW65A, BCW65B BCW65C BCW65A PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR


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    BCW65A, BCW65B BCW65C BCW65A PDF

    transistor IRG4BC10UD

    Abstract: IRG4BC10UD
    Text: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode


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    IRG4BC10UD transistor IRG4BC10UD IRG4BC10UD PDF

    dionics

    Abstract: MO chip Transistor Monolithic Transistor Pair NPN Monolithic Transistor Pair
    Text: Detailed S pecifications on Reverás Sido, Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 •4880 Dl 4045-1 □IONICS INC. ea flufiHMOlif St. wf fiifiuar. n.y. 11360 3iB-i9TT74f< NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100*. PROBED


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