E4241
Abstract: E424EDT E424GDT E424IDT E424SRDT E424YDT E424-3
Text: www.eLED.com T-1 3mm CYLINDRICAL LED Package Dimensions LAMPS E424IDT E424EDT E424GDT E424YDT HIGH EFFICIENCY RED E424SRDT SUPER BRIGHT RED ORANGE GREEN YELLOW Features 1.CYLINDRICAL TYPE, TOP DIFFUSED. 2.LOW POWER CONSUMPTION. 3.I.C. COMPATIBLE. 4.RELIABLE AND RUGGED.
|
Original
|
E424IDT
E424EDT
E424GDT
E424YDT
E424SRDT
EA0110
AUG/29/2001
E424-2/4
E4241
E424EDT
E424GDT
E424IDT
E424SRDT
E424YDT
E424-3
|
PDF
|
flash jedec dip 32-pin
Abstract: MSM28F101
Text: SÛE D b?E424G O K I GOlBMbl SEMICONDUCTOR X IO K I J GROUP O K I semiconductor MSM 28 F 101 1 M BIT 128K 4T7 T - W J É , - \3>~ZQ> : 8 C M O S FLASH M EM ORY GENERAL DESCRIPTION T h e M S M 2 8 F 101 is a high speed 12 8 K x 8-bit Flash erasable and electrically reprogram m able
|
OCR Scan
|
E424G
MSM28F101
MSM28F101
TheMSM28F101
32-Pin
flash jedec dip 32-pin
|
PDF
|
32-PIN
Abstract: A10E MSM51V16900-70 MSM51V16900-80
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V16900_
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
A10E
MSM51V16900-70
MSM51V16900-80
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM514280
144-Word
18-Bit
MSM514280/SL
18-bit
cycles/128ms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C
|
OCR Scan
|
E2D0017-27-42
6652/53/54/55/56-xxx,
652A/53A/
4A/55A/56A/58A-xxx,
MSM66P54-XX,
MSM66P56-xx
MSM6650
MSM6650
MSM6375
theMSM6650familymembersoffer
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM534021B 524,288-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM534021B is a high-speed silicon gate CMOS Mask ROM with 524,288-word x 8-bit capacity. The MSM534021B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro
|
OCR Scan
|
MSM534021B
288-Word
MSM534021B
b724240
|
PDF
|
001704 711 02
Abstract: 88I9 VOICE RECORDER IC SHARP IC 701 I X11 MSM6595 MSM6688 MSM6788 MSM6791 PJ 909 pj 939
Text: OKI Semiconductor MSM6788 SBC SOLID-STATE RECORDER LSI GENERAL DESCRIPTION The M S M 6788 is a solid-state-recorder developed using the Sub Band Coding SBC m ethod. By externally connecting a m icrophone, a speaker, a speaker drive am plifier, and dedicated DRAM
|
OCR Scan
|
MSM6788
MSM6788
MSM6791
88Z9WSW
H30H003H
31V1S-QI10S
001704 711 02
88I9
VOICE RECORDER IC
SHARP IC 701 I X11
MSM6595
MSM6688
PJ 909
pj 939
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OKI electronic components OC800_ Reflector-Type Photo Interrupter GENERAL DESCRIPTION The OC8OOis a reflector-type photo interrupter that contains a high-output infrared light-emitting diode and high-sensitivity phototransistor. FEATURES • High output current
|
OCR Scan
|
OC800_
E424G
OC800
2424D
2424G
|
PDF
|
SIGMA as 226
Abstract: MSM7540 MSM7540GS MSM7560 MSM7560GS One-chip telephone IC
Text: O K I Semiconductor MSM7540 / MSM7560 5V Single-Rail ADPCM/PCM CODECs D E S C R IP TIO N The MSM 7540 and M SM 7560 are single-rail, low-voltage, full-duplex ADPCM CODECs which perform voice digitization using presampling and reconstruction filters for transm it and receive operation in PCM
|
OCR Scan
|
MSM7540
MSM7560
MSM7560
MSM7540
b72ME4D
L724E40
SIGMA as 226
MSM7540GS
MSM7560GS
One-chip telephone IC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is
|
OCR Scan
|
MSM51V16160A
576-Word
16-Bit
MSM51V16160A
42-pin
50/44-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V16900
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23CV232A-XXBS4 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23CV232A-xxBS4 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random Access Memory Module composed of four 16-Mb DRAMs 2M x 8 in TSOP packages
|
OCR Scan
|
MSC23CV232A-XXBS4
152-Word
32-Bit
MSC23CV232A-xxBS4
16-Mb
72-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Sem iconductor M SM6650 External ROM Drive Speech Synthesis LSI GENERAL DESCRIPTION MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the
|
OCR Scan
|
SM6650
MSM6650,
MSM6376
12-bit
MSM6650
MSM6650
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17170_ 1,048,576-Word x 16-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V17170 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17170 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V17170_
576-Word
16-Bit
MSM51V17170
16-bit
cycles/32ms
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V17400
304-Word
MSM51V17400
cycles/32ms
b724240
G017425
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low-power
|
OCR Scan
|
MSM5116160
576-Word
16-Bit
MSM5116160
42-pin
50/44-pin
|
PDF
|
oki m6650
Abstract: m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC MSM6650
Text: O K I Sem iconductor MSM6650 External ROM Drive Speech Synthesis LSI GENERAL D ESCR IPTIO N MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the
|
OCR Scan
|
MSM6650
MSM6650,
MSM6376
12-bit
MSM6650
00MHz,
AR76-202
b724240
M6650
MSM27C101
oki m6650
m6650
oki msm6376
zd 3.1v
CD T3 32 F11 HEM
BTU 10/400
AR76
QFP64-P-1420-V1K
PRBC
|
PDF
|
MSM511664-10
Abstract: MSM511664-80
Text: SflE D • b724240 0012=111 5 ^ O K I ■ OKIJ SEMICONDUCTOR GROUP : O K I semiconductor_—r-qfe-z*»MSM 511664 _ 65,536-WORD X ~ h 16-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511664 is a new generation dynamic RAM organized as 65,536 words x 16 bits. Thé
|
OCR Scan
|
b724240
MSM511664
536-WORD
16-BIT
MSM511664
DH-DQ15
b72424U
MSM511664---
b724H4D
MSM511664-10
MSM511664-80
|
PDF
|
