W15NA
Abstract: No abstract text available
Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14
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E3fl33T4
BC849
BC850
BC849B
BC849C
BC850B
8C850C
W15NA
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Untitled
Abstract: No abstract text available
Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90
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BD949,
BD951,
BD953,
BD955
BD950,
BD952,
BD954,
BD956
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Untitled
Abstract: No abstract text available
Text: CSD880 CSD880 NPN PLASTIC POWER TRANSISTOR Audio frequency Power Amplifier Applications Complementary CSB834 DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90 1.15 1.40 3.75 3,66 2.29 2.79 2.54 3.43 0,56 12.70 14.73 6.35 2,03 2.92 31.24 7 DEC 14.42
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CSD880
CSB834
E3fl33T4
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BZX84-3V3
Abstract: BZX84C BZX84-C3V3 BZX84 BZX84-C18 BZX84-C27 BZX84-C43 BZX84-C7V5 bzx843v3
Text: BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes PACKAG E O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0_ 2.8 0.48 0.38 4* 0.14 3 2.6 2.4 _1.02 0.89" 2.00
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BZX84C
BZX84-C3V3
BZX84-C7V5
BZX84-C18
BZX84-C43
BZX84-C27
E3A33T4
BZX84-3V3
BZX84-C3V3
BZX84
BZX84-C18
BZX84-C43
BZX84-C7V5
bzx843v3
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33T4
Abstract: CSB834 CSD880
Text: CSD880 CSD880 NPN PLASTIC POWER TRANSISTOR Audio frequency Power Amplifier Applications Complementary CSB834 j|f j ! ! I J * DIM MIN MAX A 14.42 16.51 B 9,63 10.67 C 3,56 4.83 0.90 E 1,15 1.40 F 3.75 3,66 G 2.29 2.79 H 2.54 3.43 J 0,56 K 12.70 14.73 L 6.35
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CSD880
CSD880
CSB834
000115b
33T4
CSB834
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Untitled
Abstract: No abstract text available
Text: BD135, BD137, BD139 BDI3 5 ,137,139 NPN PLASTIC POWER TRANSISTORS Complementary BD136,138,140 Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2 .25 TYP.
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BD135,
BD137,
BD139
BD136
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BCW70
Abstract: BCW69 ic 353 hz
Text: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW69 = £ri BCW70 = H2 PACKAGE O UTLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.4« 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.89* 0.60
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BCW69
BCW70
BCW69
23fl33Â
BCW70
ic 353 hz
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Untitled
Abstract: No abstract text available
Text: T IP I30, T IP I31, T IP I32 T IP I35, T IP I36, T IP I37 TIP130,131, 132 TIP135,136, 137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15
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TIP130
TIP135
E3fl33T4
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