secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
|
Original
|
PDF
|
SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
|
secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
|
Original
|
PDF
|
SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
|
Untitled
Abstract: No abstract text available
Text: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 s) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05LC
2002/95/EC
2002/96/EC
D-74025
29-Apr-05
|
GMF05C
Abstract: GMF05C-GS08
Text: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05C
D-74025
02-Mar-05
GMF05C
GMF05C-GS08
|
GMF05C
Abstract: GMF05C-GS08
Text: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 s) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05C
2002/95/EC
2002/96/EC
D-74025
29-Apr-05
GMF05C
GMF05C-GS08
|
GMF05LC
Abstract: GMF05LC-GS08
Text: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 s) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05LC
2002/95/EC
2002/96/EC
08-Apr-05
GMF05LC
GMF05LC-GS08
|
Untitled
Abstract: No abstract text available
Text: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 µs) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05LC
OT-363
D-74025
02-Mar-05
|
GMF05C
Abstract: GMF05C-GS08
Text: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 s) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05C
2002/95/EC
2002/96/EC
08-Apr-05
GMF05C
GMF05C-GS08
|
Untitled
Abstract: No abstract text available
Text: GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 s) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05MC
2002/95/EC
2002/96/EC
D-74025
29-Apr-05
|
GMF05MC
Abstract: GMF05MC-GS08
Text: GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 µs) • Small package for use in portable electronics
|
Original
|
PDF
|
GMF05MC
D-74025
02-Mar-05
GMF05MC
GMF05MC-GS08
|
Untitled
Abstract: No abstract text available
Text: MMBD4148TW / BAS16TW SURFACE MOUNT FAST SWITCHING DIODE ARRAY Features Mechanical Data • Fast Switching Speed • • Ultra-Small Surface Mount Package • • For General Purpose Switching Applications Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.
|
Original
|
PDF
|
MMBD4148TW
BAS16TW
OT363
J-STD-020D
MIL-STD-202,
DS30154
|
Untitled
Abstract: No abstract text available
Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, “Green” Molding Compound, Ultra-Small Surface Mount Package
|
Original
|
PDF
|
MMDT3904
OT363
J-STD-020
AEC-Q101
MIL-STD202,
DS30088
|
Untitled
Abstract: No abstract text available
Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020
|
Original
|
PDF
|
MMDT3904
OT363
J-STD-020
MIL-STD202,
AEC-Q101
DS30088
|
Untitled
Abstract: No abstract text available
Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
|
Original
|
PDF
|
DMN66D0LDW
OT363
AEC-Q101
DS31232
|
|
|
Untitled
Abstract: No abstract text available
Text: DMMT3906W 40V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > -40V • • IC = -200mA High Collector Current • • • Pair of PNP Transistors That Are Intrinsically Matched Note 1 2% Matching on Current Gain (hFE)
|
Original
|
PDF
|
DMMT3906W
OT363
-200mA
J-STD-020
MIL-STD-202,
DS30312
|
Untitled
Abstract: No abstract text available
Text: DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • BVceo > 40V IC = 200mA high Collector Current • • • Pair of NPN transistors that are intrinsically matched Note 1 2% Matching on Current Gain (hFE) •
|
Original
|
PDF
|
DMMT3904W
OT363
200mA
J-STD-020
MIL-STD-202,
DS30311
|
Untitled
Abstract: No abstract text available
Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the
|
Original
|
PDF
|
DMN65D8LDW
OT363
170mA
200mA
AEC-Q101
DS35500
|
Untitled
Abstract: No abstract text available
Text: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V Case: SOT363 IC = 1A high Continuous Collector Current ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.
|
Original
|
PDF
|
DSS8110Y
OT363
J-STD-020
200mV
DSS9110Y)
MIL-STD-202,
DS31679
|
Untitled
Abstract: No abstract text available
Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the
|
Original
|
PDF
|
DMN65D8LDW
170mA
OT363
200mA
DS35500
|
BC847PN
Abstract: No abstract text available
Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Case: SOT363
|
Original
|
PDF
|
BC847PN
OT363
J-STD-020
MIL-STD-202,
DS30278
BC847PN
|
BC847B
Abstract: No abstract text available
Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Case: SOT363
|
Original
|
PDF
|
BC847PN
OT363
J-STD-020
MIL-STD-202,
DS30278
BC847B
|
DMN65D
Abstract: DMN65D8LDW DMN65D8LDW-7
Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the
|
Original
|
PDF
|
DMN65D8LDW
OT363
170mA
200mA
AEC-Q101
DS35500
DMN65D
DMN65D8LDW
DMN65D8LDW-7
|
Transistor 3904 Datasheet
Abstract: No abstract text available
Text: MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • Complementary Pair One 3904-Type NPN One 3906-Type PNP Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
|
Original
|
PDF
|
MMDT3946
OT363
3904-Type
3906-Type
AEC-Q101
J-STD-020
MIL-STD-202,
DS30123
Transistor 3904 Datasheet
|
Untitled
Abstract: No abstract text available
Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
|
Original
|
PDF
|
DMN65D8LDW
OT363
170mA
200mA
DS35500
|