Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE • ObE D i i_ bb53=131 0014=163 4 ■ LUE2003S LU E2009S -K-1Z-OS MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich
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OCR Scan
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LUE2003S
E2009S
FO-163
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization
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2003S
2009S
LBE2003S
LBE2009S
LCE2003S
LCE2009S
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bel 187 transistor
Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.
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LBE/LCE2003S
LBE/LCE2009S
LBE2Q03S
LBE2009S
LCE2003S
LCE2009S
LBE/LCE200Striplines
bel 187 transistor
RTC406
LBE2003S
BEL 187 npn
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CEE 32A
Abstract: LUE2003S LUE2009S
Text: _1_L N AMER PH IL I P S/ D I SC RE T E DbE 1^53=131 G0m*ìfl3 4 D LUE2003S E2009S L -K - 2 ,1 - O S MICROWAVE LINEAR POWER TRAN SISTO RS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a seif-aligned process entirely ion implanted and gold sandwich
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OCR Scan
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LUE2003S
LUE2009S
FO-163
LUE2009S
CEE 32A
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LBE2003S
Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
Text: LBE/LCE2003S LBE/E2009S LBE/E2009SA PHILIPS I N T E RNATIONAL 5bE D • 711QA2b ODMblflS ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN transistors fo r use in a co m m o n -e m itte r class-A linear p o w e r a m p lifie r up to 4 GHz. D iffused e m itte r ballasting resistors, self-aligned process e n tire ly ion im planted and gold m e ta lliza tio n
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OCR Scan
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LBE/LCE2003S
LBE/LCE2009S
LBE/LCE2009SA
7110fl2b
LBE2003S
LBE2009S
LCE2003S
LCE2009S
LBE2009SA
LCE2009SA
sfe 5,5 ma
46 MARKING CODE
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LUE2003S
Abstract: LUE2009S
Text: ^33'05 LUE2003S E2009S J^ PHILIPS INTERNATIONAL SbE ]> • 711Qfl5b 004fc,250 2S3 ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich
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OCR Scan
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LUE2003S
LUE2009S
71lQfl2b
FO-163
LUE2003S
LUE2009S
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IC BL 176A
Abstract: No abstract text available
Text: LBE/LCE2003S LBE/E2009S LBE/E2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.
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OCR Scan
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LBE/LCE2003S
LBE/LCE2009S
LBE/LCE2009SA
LBE2003S
LBE2009S
LCE2003S
LCE2009S
LBE2009SA
LCE2009SA
IC BL 176A
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