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    E2 W SMD TRANSISTOR Search Results

    E2 W SMD TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    E2 W SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUD620

    Abstract: E2 p SMD Transistor ic 9114 FE2A INTERNATIONAL RECTIFIER 9125 smd transistor 015 G 2a1100
    Text: BUD620 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage


    Original     		PDF BUD620 D-74025 18-Jul-97 BUD620 E2 p SMD Transistor ic 9114 FE2A INTERNATIONAL RECTIFIER 9125 smd transistor 015 G 2a1100

    AN1294

    Abstract: PD60015 PD60015S
    Text: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power


    Original     		PDF PD60015 PD60015S IS-97 PD60015 PowerSO-10RF. AN1294 PD60015S

    pd55035

    Abstract: smd transistor code A4
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55035 PD55035S PowerSO-10RF. smd transistor code A4

    smd transistor code A4

    Abstract: AN1294 PD60004 PD60004S
    Text: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power


    Original     		PDF PD60004 PD60004S IS-97 PD60004 PowerSO-10RF. smd transistor code A4 AN1294 PD60004S

    AN1294

    Abstract: PD60030 PD60030S
    Text: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power


    Original     		PDF PD60030 PD60030S IS-97 PD60030 PowerSO-10RF. AN1294 PD60030S

    AN1294

    Abstract: LET20015 LET90015
    Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION


    Original     		PDF LET20015 IS-97 PowerSO-10RF LET90015 LET20015 AN1294 LET90015

    AN1294

    Abstract: LET20015 LET90015
    Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION


    Original     		PDF LET20015 IS-97 PowerSO-10RF LET90015 LET20015 AN1294 LET90015

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN general purpose double transistor BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF BCV61 BCV61A BCV61C BCV61B

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF BCV62 BCV62A BCV62C BCV62B BCV61 BCV61A BCV61B BCV61C

    Untitled

    Abstract: No abstract text available
    Text: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF BCV62 BCV62B BCV61 BCV61A BCV61B BCV61C

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30


    Original     		PDF BCV61 BCV61C BCV61B BCV61A

    Untitled

    Abstract: No abstract text available
    Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55025 PD55025S PowerSO-10RF PD55025

    4267 G

    Abstract: E2 SMD Transistor
    Text: 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms


    Original     		PDF Q67000-A9153 Q67006-A9169 Q67000-A9246 P-TO220-7-3 P-TO220-7-180 P-TO220-7-230 P-DSO-14-8 P-TO220-7-3 O-220 E3180) 4267 G E2 SMD Transistor

    smd code ND e3

    Abstract: No abstract text available
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55035 PD55035S PowerSO-10RF. smd code ND e3

    smd code ND e3

    Abstract: No abstract text available
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55035 PD55035S PowerSO-10RF. smd code ND e3

    smd dual transistor G 9

    Abstract: E2 SMD Transistor E3180 P-TO220-7-230 Q67000-A9153 Q67000-A9246 Q67006-A9169 TLE4267GM marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE 712
    Text: 5-V Low Drop Voltage Regulator TLE 4267 Features • • • • • • • • • • • • • • • Output voltage tolerance ≤ ±2% 400 mA output current capability Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms


    Original     		PDF P-TO220-7-3 O-220 E3180) P-TO220-7 P-DSO-14-8 smd dual transistor G 9 E2 SMD Transistor E3180 P-TO220-7-230 Q67000-A9153 Q67000-A9246 Q67006-A9169 TLE4267GM marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE 712

    E3180

    Abstract: smd code book e6 diode smd E6 E2 SMD Transistor P-TO220-7-230 Q67000-A9153 Q67000-A9246 Q67006-A9169 P-DSO-14-8 smd code book transistor
    Text: 5-V Low-Drop Voltage Regulator TLE 4267 Bipolar IC Features                Output voltage tolerance £ ± 2 % 400 mA output current capability Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V £ 400 ms


    Original     		PDF Q67000-A9153 O-220 E3180) P-TO220-7-4 P-TO220-7-3 P-TO220-7-11 Q67006-A9169 E3180 smd code book e6 diode smd E6 E2 SMD Transistor P-TO220-7-230 Q67000-A9153 Q67000-A9246 Q67006-A9169 P-DSO-14-8 smd code book transistor

    smd transistor marking A4

    Abstract: PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking
    Text: LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package


    Original     		PDF LET9060 PowerSO-10RF LET9060 PowerSO-10RF. smd transistor marking A4 PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking

    Untitled

    Abstract: No abstract text available
    Text: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable


    Original     		PDF Q67000-A8339 Q67000-A8340 GPD05583 GPS05121

    E2 SMD Transistor

    Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883
    Text: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100|oA Low Operating Supply C urrent.


    OCR Scan     		PDF HM-65642 HM-65642 80C86 80C88 E2 SMD Transistor SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883

    transistor kA2 smd

    Abstract: AEP01481
    Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms


    OCR Scan     		PDF Q67000-A9153 P-T0220-7-3 67006-A P-T0220-7-180 Q67000-A9246 P-T0220-7-230 GPT05887 transistor kA2 smd AEP01481

    BUD620

    Abstract: E2 p SMD Transistor
    Text: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate


    OCR Scan     		PDF BUD620 BUD620 D-74025 18-Jul-97 E2 p SMD Transistor

    smd code marking v8 sot23

    Abstract: SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13
    Text: BROADBAND SMD TRANSISTORS DESCRIPTION • Philips Components broadband transistors are the result of leading-edge technology dedicated to expanding performance and selection in the wideband arena. The devices are ideal amplifiers for VHF, UHF, and microwave


    OCR Scan     		PDF OT-223 BFG135 BFG197 BFG198 BFQ17 BFQ18A BFQ19 BFQ67 BFQ149 BFR53 smd code marking v8 sot23 SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13

    P1M marking code sot 223

    Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
    Text: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions


    OCR Scan     		PDF PXTA14 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 P1M marking code sot 223 marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223