frw-14
Abstract: F12 scr 120 63C09 SCR based power factor improvement circuit diagram SVR03 16V100UF electrolytic capacitor smd code marking marking code HY SMD Transistor smd code marking WV 750H
Text: HENYWELL HY-CON Aluminum solid electrolytic capacitor INDEX Products Guide Page Series List 1 System Diagram 2 Feature & Major Application 3 Marking & Part Number 4 Precaution 5-10 Products Specification 11-28 Characteristic Curve Table 29-31 Application Note
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295x230x130
480x310x300
500pcs
400pcs
1000pcs
frw-14
F12 scr 120
63C09
SCR based power factor improvement circuit diagram
SVR03
16V100UF
electrolytic capacitor smd code marking
marking code HY SMD Transistor
smd code marking WV
750H
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2431A
Abstract: TSC 2431A TS2431 shunt regulator negative TS2431A General Electric scr SOT-23 SCR TRIAC 2431B ka 70 05 marking diagram 65 regulator
Text: TS2431 Adjustable Precision Shunt Regulator TO-92 SOT-89 Pin Definition: 1. Reference 2. Anode 3. Cathode SOT-23 Pin Definition: 1. Cathode 2. Reference 3. Anode SOP-8 Pin Definition: 1. Cathode 8. Reference 2. Anode 7. Anode 3. Anode 6. Anode 4. N/C 5. N/C
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TS2431
OT-89
OT-23
TS2431
100mA
2431A
TSC 2431A
shunt regulator negative
TS2431A
General Electric scr SOT-23
SCR TRIAC
2431B
ka 70 05
marking diagram 65 regulator
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TS5213CX550
Abstract: computer smps circuit diagram TS5213
Text: TS5213 80mA Low Noise LDO Voltage Regulator with Enable Function SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. N/C 5. Output SOT-353 Pin Definition: 1. Enable 2. N/C or Ground 3. Ground 4. Output 5. Input General Description TS5213 is an efficient linear voltage regulator with ultra low noise output, very low dropout voltage typically 50mV at
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TS5213
OT-25
OT-353
TS5213
320mV
225uA
TS5213CX550
computer smps circuit diagram
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4800 N-channel mosfet
Abstract: MOSFET TSSOP-8 dual n-channel esd protect mosfet mosfet 4800 4800 mosfet MOSFET TSSOP-8 TSM6968SD TSM6968SDCA y parameter of mosfet
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V
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TSM6968SD
TSM6968SDCA
4800 N-channel mosfet
MOSFET TSSOP-8 dual n-channel
esd protect mosfet
mosfet 4800
4800 mosfet
MOSFET TSSOP-8
TSM6968SD
y parameter of mosfet
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Untitled
Abstract: No abstract text available
Text: TS13003 High Voltage NPN Transistor TO-92 Pin Definition: TO-126 1. Emitter 2. Collector 3. Base Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram ●
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TS13003
O-126
TS13003CT
TS13003CK
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Untitled
Abstract: No abstract text available
Text: TS9011 250mA Low Quiescent Current CMOS LDO SOT-23 Pin Definition: 1. Ground 2. Output 3. Input SOT-89 Pin Definition: 1. Ground 2. Input 3. Output TO-92 Pin Definition: 1. Ground 2. Input 3. Output General Description TS9011 is a positive voltage regulator developed utilizing CMOS technology featured very low power consumption,
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TS9011
250mA
OT-23
OT-89
TS9011
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RF transistor marking IN SOT-89
Abstract: marking 43 sot-89 A1 marking code sot-89 TS9011 TS9011A marking CODE A3 SOT89 LDO SOT89 vin 30v SOT89 MARKING CODE A1 system reset sot-89 e07 mARking
Text: TS9011 250mA Low Quiescent Current CMOS LDO SOT-23 Pin Definition: 1. Ground 2. Output 3. Input SOT-89 Pin Definition: 1. Ground 2. Input 3. Output TO-92 Pin Definition: 1. Ground 2. Input 3. Output General Description TS9011 is a positive voltage regulator developed utilizing CMOS technology featured very low power consumption,
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TS9011
250mA
OT-23
OT-89
TS9011
RF transistor marking IN SOT-89
marking 43 sot-89
A1 marking code sot-89
TS9011A
marking CODE A3 SOT89
LDO SOT89 vin 30v
SOT89 MARKING CODE A1
system reset sot-89
e07 mARking
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Untitled
Abstract: No abstract text available
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V
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TSM6968SD
TSM6968SDCA
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npn transistors 400V 0.1A
Abstract: npn switching transistor Ic 100mA MARKING CODE 24 TRANSISTOR TS13002ACT TRANSISTOR TS13002A TS13002ACT ts13002
Text: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13002A
200mA
TS13002ACT
npn transistors 400V 0.1A
npn switching transistor Ic 100mA
MARKING CODE 24 TRANSISTOR
TS13002ACT TRANSISTOR
TS13002A
ts13002
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NPN Transistor 1A 400V to - 92
Abstract: NPN Transistor 1.5A 700V
Text: TS13003B High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13003B
TS13003BCT
NPN Transistor 1A 400V to - 92
NPN Transistor 1.5A 700V
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NPN Transistor 1A 400V
Abstract: e07 mARking NPN transistor NPN TO92 400V transistor case To 92 "NPN Transistor"
Text: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5301D
TSC5301DCT
NPN Transistor 1A 400V
e07 mARking
NPN transistor
NPN TO92 400V
transistor case To 92
"NPN Transistor"
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marking 43 sot-89
Abstract: "PNP Transistor" O A B C sot-89 TSB772S TSD772SCT TSD772SCY TSD882S PNP TRANSISTOR SOT89 tsd882
Text: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)
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TSB772S
OT-89
200mA
TSD882S
TSD772SCT
TSD772SCY
marking 43 sot-89
"PNP Transistor"
O A B C sot-89
TSB772S
TSD882S
PNP TRANSISTOR SOT89
tsd882
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Untitled
Abstract: No abstract text available
Text: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5301D
TSC5301DCT
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Untitled
Abstract: No abstract text available
Text: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type
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TS13002A
200mA
TS13002ACT
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computer smps circuit diagram
Abstract: RF transistor marking IN SOT-89 27BSC TS5214 voltage regulator sot 223 voltage regulator sot 89
Text: TS5214 300mA Low Noise LDO Voltage Regulator SOT-23 Pin Definition: SOT-89 SOT-223 1. Output 2. Input 3. Ground Pin Definition: TS5214 TS5214A 1. Output 1. Ground 2. Ground 2. Input 3. Input 3. Output SOP-8 Pin Definition: 1. Input 8. Output 2. Ground 7. Ground
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TS5214
300mA
OT-23
OT-89
OT-223
TS5214A
TS5214
350mV
computer smps circuit diagram
RF transistor marking IN SOT-89
27BSC
voltage regulator sot 223
voltage regulator sot 89
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Untitled
Abstract: No abstract text available
Text: BL8504 High-Precision Low Voltage Detector DESCRIPTION FEATURES BL8504 is a series of high precision voltage detector with ultra low current consumption 500nA typ. at Vdd=3.0V . It can work at very low voltage, which makes it perfect for system reset. •
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BL8504
BL8504
500nA
500nA
50E-02
00E-02
00E-03
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3 Marking Symbol : 1.2 1.6 Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant
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TT4-EA-14570
FC694308ER
UL-94
FK330308
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3 Marking Symbol : 1.2 1.6 Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant
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TT4-EA-14570
FC694308ER
UL-94
FK330308
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3 Marking Symbol : 1.2 1.6 Low drive voltage : 1.5 V drive Halogen-free / RoHS compliant
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TT4-EA-14543
FC694309ER
UL-94
FK330309
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semiconductor body marking
Abstract: No abstract text available
Text: NB2780A Low Power, Reduced EMI Clock Synthesizer The NB2780A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2780A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent
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NB2780A
NB2780A/D
semiconductor body marking
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7320 ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features • • Package Dimensions Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321 [ESGD100]
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ENN7320
ESGD100
ESGD100]
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14513 Revision. 1 Product Standards MOS FET FC6B22090L FC6B22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features Low source-source ON resistance:Rss on typ. = 8.5 m （VGS = 4.5 V)
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TT4-EA-14513
FC6B22090L
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NB2780A
Abstract: No abstract text available
Text: NB2780A Low Power, Reduced EMI Clock Synthesizer The NB2780A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2780A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent
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NB2780A
NB2780A/D
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view
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ENN7320A
ESGD100
ESGD100]
ECSP1006-2
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