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    press-pack igbt

    Abstract: T0240NB45E T2400GB45E E0800QC25C E0280YH25C snubber IGCT T1200TB25A westcode igbt IGBT 5kV T1500TB25E
    Text: PRODUCT BRIEF d e v o V r Imp nd 4.5k a V s k t 5 e . s 2 chip Press-Pack IGBTs Features and Benefits May 2010 Issue 2 Featuring the improved 2.5kV and 4.5 kV chipsets with typically 25% reduced Vce sat With a track record spanning more than 10 years as a leading


    Original     		PDF D-68623 press-pack igbt T0240NB45E T2400GB45E E0800QC25C E0280YH25C snubber IGCT T1200TB25A westcode igbt IGBT 5kV T1500TB25E

    T0510VB45E

    Abstract: No abstract text available
    Text: Date:- 1 October, 2012 Data Sheet Issue:- P1 Insulated Gate Bi-Polar Transistor Type T0510VB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0510VB45E T0510VB45E