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    E0410 Search Results

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    E0410 Price and Stock

    TE Connectivity RE04-106P

    CONN RCPT HSG
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    DigiKey RE04-106P Bulk 31 1
    • 1 $312.98
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    Avnet Americas RE04-106P Bulk 17 Weeks, 5 Days 26
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    Mouser Electronics RE04-106P 18
    • 1 $420.29
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    Newark RE04-106P Bulk 26
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    TTI RE04-106P Each 375 1
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    Interstate Connecting Components RE04-106P 19
    • 1 $272.14
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    FDH Electronics RE04-106P 115 1
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    Master Electronics RE04-106P 90
    • 1 $261.57
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    Labfacility Limited XE-0410-001

    IEC PFA 1/0.315MM PLUG T 2M
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    DigiKey XE-0410-001 Bag 25 1
    • 1 $11.15
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    TE Connectivity RE04-106S

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    DigiKey RE04-106S Bulk 10
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    Avnet Americas RE04-106S Bulk 10
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    Mouser Electronics RE04-106S
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    • 10 $880.26
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    TTI RE04-106S Each 9 1
    • 1 $1067.58
    • 10 $1006
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    RE04-106S Each 10
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    • 10 $935.19
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    Interstate Connecting Components RE04-106S
    • 1 $1207.2
    • 10 $1086.48
    • 100 $719.8278
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    Master Electronics RE04-106S 4
    • 1 $1838.38
    • 10 $724.62
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    L-com Inc TSPE04-10M

    SPE BULK, SF/TP 16STR, PUR, GRN,
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    DigiKey TSPE04-10M Bulk 1
    • 1 $77.53
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    Telemechanique Sensors SM390AE0410

    ULTRASONIC PROXIMITY SENSOR
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    DigiKey SM390AE0410 Bulk 1
    • 1 $269.55
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    E0410 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking code 12W SOT-23

    Abstract: No abstract text available
    Text: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		LND150 LND150 DSFP-LND150 C041114 transistor marking code 12W SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		VN4012 DSFP-VN4012 B082013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		VP0104 DSFP-VP0104 C082313 PDF

    B0728

    Abstract: 125OC TN2640 TN2640ND sitn 620
    Text: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TN2640 DSFP-TN2640 B072809 B0728 125OC TN2640 TN2640ND sitn 620 PDF

    TP0620

    Abstract: TP2520ND VF25 6 PIN case mos fet p-channel sitp0
    Text: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input


    Original     		TP0620 DSFP-TP0620 B031411 TP0620 TP2520ND VF25 6 PIN case mos fet p-channel sitp0 PDF

    VN10K

    Abstract: VN0106N3 VN10KN3-G sivn
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input


    Original     		VN10K DSFP-VN10K B031411 VN10K VN0106N3 VN10KN3-G sivn PDF

    SiTN

    Abstract: TN0106 TN0106N3-G TN1506NW VF15
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,


    Original     		TN0106 DSFP-TN0106 B030411 SiTN TN0106 TN0106N3-G TN1506NW VF15 PDF

    sitn

    Abstract: TN0702N3-G
    Text: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical)


    Original     		TN0702 130pF DSFP-TN0702 B031411 sitn TN0702N3-G PDF

    b0613

    Abstract: No abstract text available
    Text: Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		VP0106 VP0106 DSFP-VP0106 B061311 b0613 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


    Original     		VP0104 VP0104 DSFP-VP0104 B062211 PDF

    TN1L

    Abstract: No abstract text available
    Text: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		TN0104 DSFP-TN0104 C071411 TN1L PDF

    b0705

    Abstract: No abstract text available
    Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance


    Original     		TN0604 DSFP-TN0604 B070511 b0705 PDF

    siemens fet to92

    Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
    Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		DN3545 DSFP-DN3545 B052009 siemens fet to92 dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G PDF

    CL520

    Abstract: CL520N3-G
    Text: CL520 Linear, Fixed Constant Current LED Driver Features General Description ► ► ► ► ► The CL520 is a fixed, linear current regulator designed for driving LEDs at 20mA. With a maximum rating of 90V, it is able to withstand transients without the need for additional transient


    Original     		CL520 CL520 O-252 DSFP-CL520 A112009 CL520N3-G PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance


    Original     		TN0702 130pF DSFP-TN0702 B031411 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities


    Original     		VN1206 DSFP-VN1206 A041309 PDF

    CL520

    Abstract: marking n3 CL520N3-G
    Text: CL520 Linear, Fixed Constant Current LED Driver Features General Description ► ► ► ► ► The CL520 is a fixed, linear current regulator designed for driving LEDs at 20mA. With a maximum rating of 90V, it is able to withstand transients without the need for additional


    Original     		CL520 CL520 O-252 DSFP-CL520 A072909 marking n3 CL520N3-G PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 128M bits SDRAM EDS1216AABH, EDS1216CABH 8M words x 16 bits Pin Configurations • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: 54-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V


    Original     		EDS1216AABH, EDS1216CABH 54-ball 133MHz cycles/64ms M01E0107 E0410E50 PDF

    P2640

    Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel PDF

    sivn

    Abstract: VN4E seimens MARKING CODE BV sot-89 125OC VN2450
    Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original     		VN2450 DSFP-VN2450 A052209 sivn VN4E seimens MARKING CODE BV sot-89 125OC VN2450 PDF

    sivn

    Abstract: sivn fet marking n3 VN0109N3-G VN0109
    Text: VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN0109 DSFP-VN0109 A041409 sivn sivn fet marking n3 VN0109N3-G VN0109 PDF

    4012L

    Abstract: 125OC VN4012 VN4012L-G
    Text: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN4012 DSFP-VN4012 A041309 4012L 125OC VN4012 VN4012L-G PDF

    2406L

    Abstract: VN2406
    Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN2406 DSFP-VN2406 A041309 2406L VN2406 PDF

    saa 1900

    Abstract: No abstract text available
    Text: EUROPEAN POWER SUPPLIES © ® CB—CERTIFICATE INPUT: 220-230 VAC/50 Hz DC OUTPUT AC OUTPUT MODEL NO. OUTPUT VOLTAGE VDC CURRENT OUTPUT mA UNIT SIZE MODEL NO. E0330BO E0360BO * E0410BT E0430BO E0460BO * E0610BT E0630BL E0650BL E0660BO E061ABT E0612ABO


    OCR Scan     		VAC/50 E0330BO E0360BO E0410BT E0430BO E0460BO E0610BT E0630BL E0650BL E0660BO saa 1900 PDF