ku-band 15 watt SSPA
Abstract: RF Prime micro-d 15 pin connectors "ku band" amplifier micro-d connectors Scans-0021413 WR-62 waveguide SSPA C Band mmic A amplifier 250W
Text: Ku-Band Hiqh Performance P o w e r/^ Q ifie r 25 Watt This amplifier is a 25W linear Ku-band SSPA that is based on wideband driver modules and a balanced Ku-band MMIC output stage. This 14.40-15.4 GHz amplifier includes a T IL enable / disable function, a temperature compensation
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20VDC
33VDC.
AS9100
98dBm
-60dBc
50msec
500nsec
65degC
20VDC
33VDC
ku-band 15 watt SSPA
RF Prime
micro-d 15 pin connectors
"ku band" amplifier
micro-d connectors
Scans-0021413
WR-62 waveguide
SSPA C Band
mmic A
amplifier 250W
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Untitled
Abstract: No abstract text available
Text: Data Sheet E f e D h D O AKD12030 Ku-Band DBS MMIC Downconverter G Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated Monolithic Downconverter • 6 dB Noise Figure • 35 dB Conversion Gain • Small Size • Low Cost • High Reliability • Covers Japanese BS Band
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AKD12030
AKD12030
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Untitled
Abstract: No abstract text available
Text: Data Sheet v E w W j G I Ç v ; ' : " " 1 Ku-Band DBS MMIC Downconverter S Your GaAs 1C Source Prellmi“ ^ The ANADIGICS Ku-Band MMIC Downconverter is a low-cost, high volume GaAs MMIC which is suitable for use in Ku-Band DBS systems, where low power consumption is required. The AKD2401 covers all Astra
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AKD2401
AKD2401
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Untitled
Abstract: No abstract text available
Text: •I QÔ14S77 00DDLÜ3 321 E mBOGO* AKD2806 Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs IC Source REV 2 FEATURES FUNCTIONAL BLOCK DIAGRAM Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability Surface Mount Package
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14S77
00DDLÃ
AKD2806
AKD2806
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High
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MGFC5212
MGFC5212
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High
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MGFC5211
MGFC5211
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High
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MGFC5213
MGFC5213
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ku-band lnb block diagram
Abstract: No abstract text available
Text: . - E • 0Ö14577 □□DG77Ö m m oc ” lüfl AKD2806 Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION REV 3 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability
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AKD2806
D814S77
AKD2806,
ku-band lnb block diagram
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MMIC cross
Abstract: No abstract text available
Text: SILICON MMIC NEC UPC1685B/G PRELIMINARY Wide-Band Mixer/Oscillator MMIC FE A TU R E S P H Y S IC A L D IM E N S IO N S Units in mm • WIDE-BAND OPERATION: DC to 890 MHz UPC1685B • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation
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UPC1685B/G
UPC1685B
UPC1685
UPC1685B/G,
34-6393/FAX
NQTICE-509
5M-5/88
MMIC cross
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Untitled
Abstract: No abstract text available
Text: HITTITE MICROWAVE CORPORATION GaAs MMIC Buffered C-Band VCO HMC131 PR E LIM IN AR Y DATA SHEET, M AY 1992 Features 1 GHz TUNING RANGE SINGLE +5V SUPPLY OPERATION NO EXTERNAL VARACTOR REQUIRED General Description The HMC131 chip is a C-Band VCO with on-chip
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HMC131
HMC131
18dBm
100MHz
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Untitled
Abstract: No abstract text available
Text: f i . Ki V HMC131C8 MICROWAVE CORPORATION I GaAS MMIC SMT BUFFERED C-BAND VC F E B R U A R Y 1998 Features General Description 1 GHz T U N IN G RAN G E The HMC131C8 is a SM T C-Band VCO S IN G L E + 5 V S U P P LY O P ER ATIO N with on-chip buffering for improved load iso
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HMC131C8
HMC131C8
NICKEL100
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TQP7M4002
Abstract: LB514
Text: TQP7M4002 Advance Datasheet 3V Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC Description: Package Outline : The TQP7M4002 is a quad-band capable 3V power amplifier MMIC for GSM applications. Fabricated with a high-reliability InGaP GaAs HBT technology, the MMIC supports GPRS Class12 operation. By virtue of advanced design techniques,
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TQP7M4002
E-GSM/GSM850/DCS/PCS
TQP7M4002
Class12
LB514
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01058B GaAs IC with built-in ferroelectric Dual band-capable Low Noise Amplifier LNA for PDC unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 M Di ain sc te on na tin nc ue e/ d 6 0.5 –0.05 ● Dual band-capable
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GN01058B
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TAG-1035
Abstract: tag103
Text: Product Information ISO 9001 CERTIFIED TA G - 1 0 3 5 5.8 to 6.4 GHz GaAs MMIC VSA T C-BAND Power Amplifier AT F e a t u rre es ♦ ♦ ♦ ♦ 26 dBm Minimum Linear Output Power 18 dB Small Signal Gain Thermally Efficient Moly-Copper Package C-Band VSAT Application
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TAG-1035
tag103
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AKD2705
Abstract: ku-band lnb block diagram
Text: Da ta S h e e t E ftTMiqg Ku-Band DBS MMIC Downconvtrter Advanced Product Information Your G aAs IC Source REV. 0 ÜÜ FEATURES FUNCTfONAL BLOCK DIAGRAM Integrated Monolithic Downconverter Surface Mount Package 6 dB Noise Figure 34 dB Conversion Gain Single + 6 Volt Supply
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AKD2705
ku-band lnb block diagram
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AKD12000
Abstract: No abstract text available
Text: Data S h e e t E hMhDIGICS AKD12000 Ku-Band DBS MMIC D ow nconverter Your G aA s I C Source FEATURES FUNCTIONAL BLOCK DIAGRAM • Integrated M onolithic D ownconverter • 6 dB Noise Figure • 35 dB Conversion Gain • Small Size • Low Cost • High R eliability
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AKD12000
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7176C N o tic e : T h is is n o t a fin a l s p e c ific a tio n S o m e p a ra m e tric lim its a re s u b je c t to ch a n g e . 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION
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MGF7176C
MGF7176C
28dBm
78GHz
-46dBc
25MHz
87GHz
-60dBc
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7175C N o tic e : T h is is n o t a fin a l s p e c ific a tio n S o m e p a ra m e tric lim its a re s u b je c t to ch a n g e . 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION
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MGF7175C
MGF7175C
28dBm
-46dBc
25MHz
99GHz
-60dBc
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TAE-1030
Abstract: No abstract text available
Text: Product Information ISO 9001 CERTIFIED TA E - 1 0 3 0 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ +28.5dBm Output Power @1dBm Gain Compression ♦ 25 dB Minimum Small Signal Gain ♦ Surface Mount, Thermally Efficient Moly-Copper Package
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TAE-1030
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Untitled
Abstract: No abstract text available
Text: SILICON MMIC NEC UPC1677B/C PRELIMINARY 1.7 GHz Medium Power Wide-Band Amplifier FEATURES PHYSICAL DIMENSIONS • H IG H P O W E R O U T P U T : + 19.5 dBm Units in mm UPC1677B • EXCELLENT FR E Q U E N C Y RESPONSE: 1 27 ± 0 1 1.27±0 1 1.7GHz TYP at 3 dB Down
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UPC1677B/C
UPC1677B
UPC1677
UPC1677C
UPC1677B/C,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5218 is a GaAs MMIC chip especially
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MGFC5218
MGFC5218
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2.45 Ghz power amplifier
Abstract: TAE-1010AB tae1010 1010a rf power amplifier with s parameters Power Amplifier MMIC 2.6 GHz Teledyne Wireless TAE-1010
Text: Product Information ISO 9001 CERTIFIED TA E - 1 0 1 0 A B 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +24dBm Output Power @ 1dB Gain Compression 25 dB Gain Low V oltage Operation Voltage Surface Mount Molly-Copper Package Product Description
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24dBm
TAE-1010AB
2.45 Ghz power amplifier
tae1010
1010a
rf power amplifier with s parameters
Power Amplifier MMIC 2.6 GHz
Teledyne Wireless
TAE-1010
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AKD2400
Abstract: No abstract text available
Text: E èÎËQGÇS AKD2400 Ku-Band DBS MMIC Downconverter P R E LIM IN AR Y REV. 5 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated M onolithic D ow nconverter Surface M ount Package 6 dB Noise Figure 34 dB C onversion Gain Single + 6 Volt Supply
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AKD2400
AKD2400,
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2.45 Ghz power amplifier
Abstract: TAE-1010AB RF MESFET S parameters 1010a tae1010
Text: Product Information ISO 9001 CERTIFIED TA E - 1 0 1 0 A B 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +24dBm Output Power @ 1dB Gain Compression 25 dB Gain Low V oltage Operation Voltage Surface Mount Molly-Copper Package Product Description
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24dBm
TAE-1010AB
2.45 Ghz power amplifier
RF MESFET S parameters
1010a
tae1010
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