Untitled
Abstract: No abstract text available
Text: 3JH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. U n i t in m m . R e p e t i t i v e P e a k R e v e r s e V o l t a g e : V rrh =600¥ . Average Forward Current : If AV =3.0A . V e r y F a s t R e v e r s e - R e c o v e r y T i m e : tr r = 2 0 0 n s ( M a x . )
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3JH45
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Untitled
Abstract: No abstract text available
Text: R e v is e d M a y 199 9 SEMICONDUCTOR TM FSTU3384 10-Bit Bus Switch with Undershoot Protection General Description n e c te d to P o rt B. W h e n O E is H IG H , th e s w itc h is O P E N a n d a h ig h -im p e d a n c e s ta te e x is ts b e tw e e n th e tw o p o rts .
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FSTU3384
10-Bit
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL , 1N4938R SEMICONDUCTOR INC. REVERSE POLARITY SWITCHING DIODE D IFFU S E D S ILIC O N PLANA R 1 ABSOLUTE MAXIMUM RATINGS \ C H A R A C T E R IS T IC SYM BOL VALUE U N IT vR R e v e rs e V o lta g e 175 V VRM P e a k R e v e rs e V o lta g e 200
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1N4938R
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Untitled
Abstract: No abstract text available
Text: Ranger Selectors D e c - R a n g e r TM D e c a d e R e s i s ta n c e S e l e c t o r F e at u r e s • Rotary tap switches operate in either direction • Direct digital readout A precision, ±0.1% accuracy, decade resistance box. The unit has a sturdy
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1-866-9-OHMITE
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Untitled
Abstract: No abstract text available
Text: Product specification BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e
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BAW100
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HPE-200
Abstract: No abstract text available
Text: SILIC O N NPN EPITAXIAL TYPE 2SC4213 U n i t i n mm FOR MUTING AND SWITCHING APPLICATIONS. • High E k n itte r-B a s e V o l t a g e : 21 ± 0.1 1.25 ±0.1 VEB0=25V Min. oo • High R e v e r s e hpE : R e v e r s e h p E = 1 5 0 ( T y p . ) ( V c e = - 2V , Ic=-2mA)
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2SC4213
SC-70
HPE-200
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Untitled
Abstract: No abstract text available
Text: SWITCHING DIODES, SURFACE MOUNT, MELF PACKAGE M a x im u m i i i i l i s P a rt N um ber P ow er D is s ip a tio n Pea* R e v e rs e V o lta g e M a x im u m A v e ra g e Fwct C u rre n t M a x im u m R e v e rs e V o lta g e D rop a t 1, M a x im u m R e v e rs e
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LL4148
LL4149
LL41S0
L14152
LL41S4
LL4447
LL4448
DO-35
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2CMA167888R1000
Abstract: 2CMA167842R1000
Text: Switched interlocked socket-outlet IP67 16-32 A Enclosure : Thermoplastic Cable entry : Knock-out Ø25mm Cable area for 16A : 1.5 - 4 mm2 Cable area for 32A : 2.5 - 10 mm2 Terminals/ Poles 2P+E 2P+E 3P+E 3P+N+E 2P+E 2P+E 3P+E 3P+N+E Type 216MVS4W 216MVS6W
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216MVS4W
216MVS6W
316MVS6W
416MVS6W
232MVS4W
232MVS6W
332MVS6W
432MVS6W
2CMA167823R1000
2CMA167824R1000
2CMA167888R1000
2CMA167842R1000
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siemens EM 235
Abstract: sfh siemens 900-3 SFH900 Q62702-P935 sfh diode
Text: SIEMENS SFH 900 Miniatur-Reflexlichtschranken Miniature Light Reflection Switches P la s tic f la s h b e tw e e n _,1'9 jri?.! t ^ o d i k -I'll- 1. 0.8 2. •^ , , p oi i T - S » * 3. E m itt e r onode E m itt e r c a th o d e / d e te c to r e m it te r
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Untitled
Abstract: No abstract text available
Text: C in a v SP791 •HW * Low Power Microprocessor Supervisory ] with Battery Switch-Over | ■ P recision 4 .6 5 V V o lta g e M onitoring ■ 2 0 0 m s P o w e r-O K /R e s e t T im e D e la y ■ In d e p e n d e n t W a tch d o g T im e -P re s e t or A d justab le
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SP791
SP791
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DS24V
Abstract: No abstract text available
Text: SEM ICONDUCTOR KMB6D0NS30QA TECHNI CAL DATA N-Ch M O SF E T +SB D G E N E R A L D E S C R IP T IO N This trench MOSFET has better characteristics, such as fast switching tim e, low on re sista n c e , low g ate c h arg e and e x c e lle n t a v a la n ch e
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KMB6D0NS30QA
20NS30QA
S30QA
DS24V
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Untitled
Abstract: No abstract text available
Text: I I TYPE 1N643 SILICON SWITCHING DIODE I BU LL E T IN NO. DL-S 739459, N O V E M B E R 1 9 6 6 -R E V IS E D M AR C H 1973 I M E D IU M -S P E E D SW IT C H IN G D IO D E • Rugged Double-Plug Construction
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1N643
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smd JSs diode
Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
Text: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e
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BAW100
smd JSs diode
smd JSs
smd JSs 75
marking JSs
BAW100
smd JS
smd JSs 85
smd JS p
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MMBF4119
Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
Text: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for
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PN4117
PN4118
PN4119
MMBF4117
MMBF4118
MMBF4119
OT-23
G1A/61C/61E
S01130
MMBF4119
PN4119
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613SS2
Abstract: change over switch circuit diagram 3ma5 613SS4 202216
Text: MAGNETIC CHARACTERISTICS CENTER OF SENSING AREA T SWITCH SYMBOL .2 0 0 CASE DIM .2 4 0 MAX OVER FLASH - 4 0 ° C T O 150 ° C 495 40 33 600 50 40 T E M P RANGE O P E R A T E MAX R E L E A S E M IN D I F F M IN O P E R A T E MAX R E L E A S E M IN D I F F M IN
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DR-1212-3
613SS4
PR-4415
613SS2
10/iA
613SS2
change over switch circuit diagram
3ma5
613SS4
202216
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Untitled
Abstract: No abstract text available
Text: Transistors Interfaces and switching 60V, 115mA RK7002 • F e a tu re s • E x te r n a l d im e n s io n s (U nits: m m ) 1) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) L o w -v o lta g e d riv e (4V). 4) E asily d e s ig n e d d riv e circu its.
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115mA)
RK7002
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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1000LT1
Abstract: marking AB SOD123
Text: M O TO R O LA Order this docum ent by MMBD1000LT1/D SEMICONDUCTOR TECHNICAL DATA G r e e n v J L i ne MMBD1OOOLT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode P a rt o f th e G re e n L in e 1“ P o rtfo lio o f d e v ic e s w ith e n e rg y - c o n s e r v in g tra its .
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MMBD1000LT1/D
MMBD2000T1
MMBD3000T1
MMSD1000T1
X34S94F
1000LT1
marking AB SOD123
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Untitled
Abstract: No abstract text available
Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s • E x t e r n a l d im e n s io n s (U nits: m m ) 1) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) L o w -v o lta g e d riv e (4V). 4) E a sily d e s ig n e d d rive circu its.
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200mA)
2SK2731
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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PDF
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PN4258
Abstract: 2N5771 MMBT5771
Text: 2N5771 I MMBT5771 & Discrete P O W E R & S ig n a l Technologies _ National S e m i c o n d u c to r” MMBT5771 2N5771 PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e r y h ig h s p e e d s a tu ra te sw itc h in g at c o lle c t o r c u r r e n ts to 1 0 0 m A . S o u r c e d fro m P r o c e s s 6 5 . S e e
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2N5771
MMBT5771
PN4258
S01130
0GMG717
2N5771
MMBT5771
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buf420
Abstract: BUF420M
Text: m SGS-THOMSON BUF420 BUF420M HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SG S-T H O M S O N P R E F E R R E D S A L E S T Y P E S NPN TRAN SISTO R HIGH V O LT A G E CAPABILITY V E R Y HIGH SW ITCHING S P E E D MINIMUM LOT-TO-LOT S P R E A D FO R
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BUF420
BUF420M
BUF420M
SC-43S4
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PDF
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7536-1 voltage regulator
Abstract: 52485-1D E375-3C8 FPQ-26 AN-952A BPQ26 M7473 H7C1PQ LMTC
Text: A PPLIC A T IO N N O T E 9 52A A Multiple Output, Off-e Switching Power Supply Using HEXFETs H E X F E T is t h e t r a d e m a r k f o r I n t e r n a t i o n a l R e c t i f i e r P o w e r M O S F E T s By P E TER W O O D Introduction T h e recen t in tro d u c tio n o f H E X
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E-375-3C8
AN-952A
7536-1 voltage regulator
52485-1D
E375-3C8
FPQ-26
AN-952A
BPQ26
M7473
H7C1PQ
LMTC
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KA1L0365R
Abstract: No abstract text available
Text: SMART POWER SWITCH KA1L0365R SMART POWER SWITCH T h e S P S p ro d u ct fa m ily is sp e c ia lly d e sig n e d fo r an o ff-lin e S M P S w ith m inim al e xte rn a l co m p o n e n ts. T h e S P S c o n s is t of high v o lta g e p o w e r S e n s e F E T a nd c u rre n t m ode PW M IC.
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KA1L0365R
KA1L0365R
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103SR18-1
Abstract: No abstract text available
Text: 4 . 5 TO 2 4 . 0 VDC L A T C H I N G D E V I C E I 5_ FIG. 2 OPERATE S E N S O R W I L L BE LOCATED ANYWHERE WITHIN 0 . 0 2 5 X X + Vs SWITCH SYMBOL FIG. NOT E S A f l u x e n t e r i n g t h e s o u t h p o l e o f t h e m a g n e t wi l l o p e r a t e t h e se n s o r
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23AUG88
00Ozh
103SR18-1
103SR18-1
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PIC625
Abstract: pic 625
Text: SM 625 Switching R T he I n f i n i t e P o w e r I f n n o v a t i \ o N R ot egulator P ecommended DESCRIPTION T h e S M 62 5 /S M 6 2 6 /S M 6 2 7 s e r ie s o f P o w e r O u tp u t S ta g e s a r e e s p e c ia lly d e s ig n e d to b e d r iv e n w ith s ta n d a r d
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300ns
SM625R
SM626R
SM627R
SM625HRR
SM626HRR
SM627HRR
PIC625
pic 625
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