transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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Untitled
Abstract: No abstract text available
Text: E l e c t r i c a l S a f e t y P ro g r a m W o r k i n g T o g e t h e r F o r A S af e r W o r k p l a c e Checklist This audit checklist is designed to help you perform an electrical safety audit of your facility. Though there Audit may be multiple Woodhead solutions to a particular non-compliant condition, only basic Woodhead part numbers are listed in this document.
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13005
Abstract: E 13009 L 13001 dip40 package 13001 datasheet 13005 2 SSO24 transistor 13009 D-16 D-20
Text: IC Packaging Information Package Information Ceramic DIP, 8-16 Leads E 1 E1 2 D S A1 A L L2 b e L1 C b1 Q e1 Dim Millimeters Min Max Inches Min Max A A1 b b1 C D-8 D-14 D-16 E E1 e e1 L L1 L2 S-8 S-14 S-16 4.06 5.08 1.27 2.16 1.14 1.65 0.38 0.51 0.20 0.30
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SSO28
SSO24
SSO24
SSO44
Aug-96
SSO64
13005
E 13009 L
13001
dip40 package
13001 datasheet
13005 2
transistor 13009
D-16
D-20
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Untitled
Abstract: No abstract text available
Text: 4 T H IS DRAW ING IS U N P U B L IS H E D . 3 RELEASED BY TYCO ELECTRON ICS CORPORATION. COPYRIGHT FO R PU BLICATIO N 2 LOC - A L L R IG H T S R E S E R V E D . G DIST R E V IS IO N S 02 P LTR D D E S C R IP T IO N REV PER ECR 0 5 -0 0 9 5 9 9 D WIRE S I Z E
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04mm2-2
62mm2)
06DEC05
U30098
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bta1b
Abstract: ANI 1015 1N3064 1N916 binary multiplier
Text: f MI L - M- 3 8 5 1 0 / 3 1 8 A 9 August 1983 SUPERSEDI NG MI L - M- 3 8 5 1 0 / 3 1 8 USAF 20 A p r i l 1979 MI L I T ARY S P E C I F I C A T I O N MI C R OC I R C U I T S , D I G I T A L , LOW POWER SCHOTTKY T T L , BI NARY MU L T I P L I E R , MONOLI THI C S I L I C ON
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MIL-M-38510/318A
MIL-M-38510/318
MIL-M-38510,
bta1b
ANI 1015
1N3064
1N916
binary multiplier
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pht 094
Abstract: IH5341EPD N5352
Text: tS-Zsht ftHi- JH. y k i y j x i / k i D u al/Q u ad R F/V kteo S w itch es G t n t r t/ DvicWptfo/i T h t IH B 3 41 t n d r « HH5 3 5 E d u l l e n d q u n d S in g le p o le a- ng-fl th ro w fSPST} aw rtclraa d ff lig n e d &p a c ific a lly fo r aiwllchJng f l F a rid v id e o s i g n a l . M a i n e 's |K £341
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IHB341
HH535E
IHKS41
N5352
IH5341
tH53K
940BB
37-76W
pht 094
IH5341EPD
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D 13009 K
Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
Text: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:
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500mA
VCB-10V
D 13009 K
e 13009 f
E 13009 2
J 13009 - 2
13009
D 13009
j 13009
13009 H
npn 13009
13009 applications
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transistor E 13009
Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
Text: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 MJE 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS
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bfci53T31
f-33-13
T0-220
MJE13008
june1988
T-33-13
transistor E 13009
transistor d 13009
D 13009 K
E 13009 L
transistor 13009
e 13009 f
J 13009 - 2
tr 13009
transistor MJE 13009
13008 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - - R E V IS IO N S RESERVED. G - LTR K2 D D E S C R IP T IO N R EVISED PER DATE DWN 21 M AR 12 KH E C O - 12 - 0 0 5 5 0 7 A PVD DR D
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10JAN
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54HC08
Abstract: SR 13003 E 13007-1 54hc32 J006 13003 sd 9lc marking E 13007 E 13009 z EN 13009
Text: MIL-M-38510/652A 15 Ma* 1987 5 U P L K 3 E Ü I N G -MIL-M-38510/652 31 Ma r c h 1986 M I LI TARY S PECI FI CAT I ON »„ n „ . M I C R O C I R C U I T S , D I G I T A L , HIGH SPEED, CMOS, AND GATES, OR GATES, MONOLITHIC S I L I C O N , P O S I T I V E LOGIC
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MIL-M-38510/652A
MIL-M-38510/652
Sha11
MIL-M-38510,
54HC32
54HC86
54HC08
54HC11
MIL-M-38510/652A
60VERMENT
SR 13003
E 13007-1
J006
13003 sd
9lc marking
E 13007
E 13009 z
EN 13009
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transistor E 13009
Abstract: transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l
Text: MOTOROLA SC XSTRS/R 1 S E 0 I ti3ti725M 0 G Ö 5 4 0 3 F r - MOTOROLA TECHNICAL DATA e s i g n e r s 3 * - / 3 MJE13008 MJE13009 SEMICONDUCTOR D 3 | D a t a . S h e e t 12 A M P E R E NPN SILICON POWER TRANSISTORS 3 0 0 and 4 0 0 V O L T S 100 W A T T S SWITCHMODE SE R IE S
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ti3ti725M
MJE13008
MJE13009
transistor E 13009
transistor d 13009
n752
E13009
E 13009
J 13009 - 2
E 13009 TRANSISTOR motorola
e 13009 p
D 13009 K
e 13009 l
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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Untitled
Abstract: No abstract text available
Text: N o t e iT h is n u m e ric a l in d e x lists all cataloged parts by base noonly. Complete part nos. with prefixes and / or suffixes are shown on the page(s) indicated. Numerical Index Part No. 31818 31902 31906 31907 32050 32051 32053 32054 32055 32060
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 3 U N P U B L IS H E D . RELEASED FO R ALL P U B L IC A T IO N RIG H TS LOC REVISIO NS G RESERVED. 4 D E S C R IP T IO N K1 D RE VISED PER DWN E C O -1 1 -0 0 4 9 1 7 1 1MAR11 APVD RK HMR D BODY SLEEVE 1\ STAMP AMP 5.26 + 0.08 [.2 0 7 + .003]
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1MAR11
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Untitled
Abstract: No abstract text available
Text: 12 13 10 P A R T NO. ENGINEERING NO. C A B LE RANGE T H R E A D SIZE ’A ' HEX 'L 1 LENG TH L / 2 LENG TH 1300970250 364-90 .1 9 -,2 5 / 4 .8 -6 .4 3 /8 .88 / 22.4 4 .25 / 108.0 2.13 / 5 4.0 1300970225 364-30 .2 5 -,3 1 / 6 .4 -7 .9 ISO VIEW NPT S C A LE : F U LL
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SD-130097-004
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j 13009
Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
Text: ± 0 N m ü re ID Is- ; / l \ t * *4 CUL a. O * id OQ z -D z ^ Í7-* ; : * ' ^ <? 94V -0) ^ & 7 b * 'J ^ V ' S> 3 C IR C U IT *7 6 6 -^- - f a -fe . J» . : . ^ ^ IT : » H l . N O .1) A * * ^ ^7 ^ ^ e in . 3 /aml¿X _L<iO — 'V =*c t ^ » Ä i S I 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8*P*|$1 p.miiX J^ co * ¥ - æ ^
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J-12583
30-JAN
j 13009
J 13009 - 2
e 13009 f
mj 13009
E 13009 L
p 13009
D 13009 K
13009R
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transistor E 13009
Abstract: transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l
Text: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008
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KSE13008/13009
O-220
KSE13009
KSE13008
transistor E 13009
transistor d 13009
transistor 13009
D 13009 K
13009 TRANSISTOR
E 13009 L
p 13009
e 13009 f
e13009
transistor E 13009 l
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e 13009 d
Abstract: transistor E 13009 transistor E 13009 l E 13009 2
Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:
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KSE13008/13009
KSE13008
KSE13009
e 13009 d
transistor E 13009
transistor E 13009 l
E 13009 2
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transistor E 13009
Abstract: D 13009 K E13009 transistor 13009 transistor b 595 transistor d 13009 E 13009 L e 13009 f J 13009 - 2 E 13009 2
Text: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Rating Symbol Unit : K S E 1 3008 VcBO
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KSE13008/13009
KSE13009
KSE13008
transistor E 13009
D 13009 K
E13009
transistor 13009
transistor b 595
transistor d 13009
E 13009 L
e 13009 f
J 13009 - 2
E 13009 2
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E 13009 2
Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Text: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use
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aS3T31
O-220
MJE13008
bb53131
E 13009 2
transistor E 13009
EB 13009 D
e 13009 l
p 13009
D 13009 K
transistor mje
EB 13009
e 13009 d
transistor E 13009 l
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e13009
Abstract: transistor 13009 transistor switch 13009 13009 TRANSISTOR 13009 H 13009 NPN Transistor power switching transistor 13009 13009 13009* transistor npn 13009
Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : KSE13008 : KSE13009 Rating Unit
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KSE13008/13009
KSE13008
KSE13009
KSE13008
KSE13009
O-220
e13009
transistor 13009
transistor switch 13009
13009 TRANSISTOR
13009 H
13009 NPN Transistor
power switching transistor 13009
13009
13009* transistor
npn 13009
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PIDG
Abstract: No abstract text available
Text: DO N O T SCALE DIMENSIONS IN 14 I NCH INCH QTY P R O J ECTION 21 20 19 PARTITION 131419-2 13 2526-1 16 3179-1 9-160463-2 9-160313-2 165034-0 130171-0 35108-0 320862-0 130094-0 320565-0 320619-0 165142-0 35559-0 326861-0 31890-0 36150-0 31880-0 34072-0 34071-0
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EH00-0259-01
EH-0921-96
eh005666
/home/sh005666/edmmod
PIDG
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PHE13009
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The P H E 13009 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,
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PHE13009
PHE13009
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DO-213AA
Abstract: TA 8270 H D 13009 K j 13009 Siemens+MTT+95+A+12+N
Text: Zener Regulator Diodes ZEN Microsemi Package Division I Outline SM SM SM STD STD STD STD STD STD STD STD STD STD STD SM STD STD SM STD STD SM SM SM STD STD STD STD STD STD STD STD STD STD STD SM STD STD SM STD STD SM SM SM STD STD STD 11487 13008 13009 3819
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DO-213AA
DO-35
TA 8270 H
D 13009 K
j 13009
Siemens+MTT+95+A+12+N
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