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    Text: AVG Semiconductors DDi Technical Data Quad AND/OR Gates DV4019B 4019B This device gate is constructed with MOS P-Channel and N-Channel enhancement mode devices in a single monolithic structure. It is recommended for use where low power dissiĀ­ pation and/or high noise immunity is desired.


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    PDF DV4019B 4019B AVG-003 AVG-004 1-800-AVG-SEMI