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    DV 414 Price and Stock

    Microchip Technology Inc DV244140

    Emulators / Simulators MPLAB ICE 4 In-Circuit Emulator, Programmer and Debugger
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DV244140 4
    • 1 $2068.85
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    Microchip Technology Inc DV164140-2

    Sub-GHz Development Tools LoRa(R) Technology Eval Kit - 900
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DV164140-2 1
    • 1 $741.92
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    Renesas Electronics Corporation DA14592MOD-01DEVKT-P

    Bluetooth Development Tools - 802.15.1 Bluetooth Low Energy Development Kit Pro for DA14592 modele: Includes motherboard, daughterboard and cables; Primary usage is SW application development and power measurements
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DA14592MOD-01DEVKT-P
    • 1 $143.78
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    Honeywell Sensing and Control LDVS-5414V

    Limit Switches Limit Switch
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    Mouser Electronics LDVS-5414V
    • 1 $1151.85
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    Samtec Inc FTSH-104-14-F-DV

    Headers & Wire Housings High Reliability Header Strips, .050" pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FTSH-104-14-F-DV
    • 1 $1.69
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    • 100 $1.46
    • 1000 $1.08
    • 10000 $0.56
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    DV 414 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    99218

    Abstract: POM7-256C Fluke 54200 HLE-115
    Text: JULY 14, 1999 TEST REPORT #99218 QUALIFICATION TESTING HLE-115-Ol-L-DV TSM-115-04-L-DV SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. L REVISION LEVEL DATE DESCRIPTION REVISION NO. - r INITIAL ISSUE


    Original     		PDF HLE-115-Ol-L-DV TSM-115-04-L-DV 992180C 99218 POM7-256C Fluke 54200 HLE-115

    74HC00

    Abstract: ixdp630 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414
    Text: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


    Original     		PDF EVBD4400 IXDP630 IXDP631 74HC00 74HC04 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414

    TX02-4400PI

    Abstract: No abstract text available
    Text: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


    Original     		PDF EVBD4400 IXDP630 74HC00 74HC04 IXFK90N20Q TX02-4400PI

    HP70311A

    Abstract: HP3610A HP54754A FOA1251B1 hp70841b FOA1252B1 G957 OC48 STM-16 TSSOP-16
    Text: n io at rm fo In ce an ICs for Communications 2.5 Gbit/s, 3.3 V Transimpedance Amplifier Device Version 1.0 dv FOA1251B1, FOA1252B1 A High Gain 3.3 V Transimpedance Amplifier with Postamplifier for Tele- and Datacom Receiver Applications Advance Datasheet


    Original     		PDF FOA1251B1, FOA1252B1 10June1999 HP70311A HP3610A HP54754A FOA1251B1 hp70841b FOA1252B1 G957 OC48 STM-16 TSSOP-16

    EMC Filters

    Abstract: No abstract text available
    Text: EMC FILTERS Single-Phase Filters, Three-Phase Filters, Three-Phase + Neutral Line Filters, DC Filters, Screened Room Filters 3Ph+N , Output Ferrites, dV/dt Output Filters , Feedthrough Filters PREMO EMC Filters INTRODUCTION Electromagnetic Interference Most electronic equipment generates electromagnetic interference,which in some


    Original     		PDF

    SKHI 64

    Abstract: Semidriver SKHI 64 semikron SKHI 64 SKHI64 connector 26 pin semikron connector "26 pin" din 41651 semikron 5045-04 Semidriver SKHI 64 mounting transistor VCE 900V SKHI 20
    Text: SKHI 64 Absolute maximum ratings Symbol Term VS supply voltage non stabilized ViH input signal voltage high VCE collector emitter voltage (max.) rate of rise and fall of voltage dv/dt (secondary to primary side) isolation test voltage (AC, rms, 2 sec.) VisolIO


    Original     		PDF Visol12 SKHI 64 Semidriver SKHI 64 semikron SKHI 64 SKHI64 connector 26 pin semikron connector "26 pin" din 41651 semikron 5045-04 Semidriver SKHI 64 mounting transistor VCE 900V SKHI 20

    AUIRF7303Q

    Abstract: auirf7303
    Text: PD - 97654C AUTOMOTIVE GRADE AUIRF7303Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*


    Original     		PDF 97654C AUIRF7303Q AUIRF7303Q auirf7303

    Untitled

    Abstract: No abstract text available
    Text: AUIRF7303Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant


    Original     		PDF AUIRF7303Q

    RL-01802

    Abstract: RL-00201 RL40003
    Text: 3-Phase Reactors Line/Load Reactors • • • • • • • • • • Increase Drive System Reliability Filter Power Line Disturbances Reduce Harmonics Reduce Surge Currents Reduce dv/dt Extend Transistor Life Reduce Motor Noise and Temperature Reduce Voltage Doubling Effects


    Original     		PDF N9525 1-800-455-4MTE 1141C RL-01802 RL-00201 RL40003

    Untitled

    Abstract: No abstract text available
    Text: PD - 97654C AUTOMOTIVE GRADE AUIRF7303Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*


    Original     		PDF 97654C AUIRF7303Q

    SS1045

    Abstract: 43171 46091 81714 DW 3432 47046 DATASHEET 5609 transistor ss109 SS10 SS104
    Text: 8-,768 6 0,&21'8&725 0,&52&21752//(5 0$18$/ 3UHOLPLQDU\ 414 0%<3853 )50&049/; )$0,/< 0,&52&21752//(56 +$5':$5( 0$18$/ 0%<3853 )50&049/; )$0,/< 0,&52&21752//(56 +$5':$5( 0$18$/ (GLWLRQ 413 -XO\ 4<<: ” 4<<: )8-,768 /,0,7(' $OO 5LJKWV 5HVHUYHG1 &LUFXLW GLDJUDPV XWLOL]LQJ )XMLWVX SURGXFWV DUH LQFOXGHG DV D PHDQ RI LOOXVWUDWLQJ W\SLFDO


    Original     		PDF SS105; SS106 SS1045 SS1049 400ELW SS1057 SS1045 43171 46091 81714 DW 3432 47046 DATASHEET 5609 transistor ss109 SS10 SS104

    620 diode

    Abstract: FP500TF10U
    Text: XI'AN IR-PERI Company FP500TF10U PRELIMINARY “ HALF-BRODGE ” HEXFET Power MOSFET INT-F-PAK Features • • • • • • 3 VDSS=100V Advanced Process Technology Ultra Low On-Resistance 4 5 1 Dynamic dv/dt Rating 175 C Operating Temperature RDS on =0.003Ω


    Original     		PDF FP500TF10U 100oC 125oC 620 diode FP500TF10U

    Untitled

    Abstract: No abstract text available
    Text: STE145N65M5 N-channel 650 V, 0.012 Ω typ., 143 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS on max STE145N65M5 710 V ID 0.015 Ω 143 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability


    Original     		PDF STE145N65M5 DocID025538

    SM6G14

    Abstract: SM6D14 211 ih H-17 SM3G45A SM3J45A SM6B14
    Text: 138 - tt- 6 J,4 5 A o % to *> % V L 3 A, 400V—600V • » « Itt W t t id iS ¥ SM 3G45A SM 3 J4 5 A 400 600 I tsm 3 T c = lir C j 30/33 (50Hz/60Hz, I 2-t V d — V drm V tm I tm = 4 .5 A Vgt \ A aS Vgd I gm 2 A Ih 50 A / js dv/dl T, 125 X dv/dtio X Rlh


    OCR Scan     		PDF OTO-220AB> SM3G45A SM3J45A 50Hz/60Hz, H-101 SM6G14 SM6D14 211 ih H-17 SM6B14

    1RF9Z24

    Abstract: IRF9Z24 RO25 xi 1507 1RF9Z24S
    Text: PD-9.647A International «»Rectifier IRF9Z24 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = -6 0 V


    OCR Scan     		PDF IRF9Z24 O-220 0-28O 1RF9Z24 RO25 xi 1507 1RF9Z24S

    Untitled

    Abstract: No abstract text available
    Text: International io« Rectifier • 0 0 1 4 ^ 3 2 374 ÊÊINR PD-9.912 IRF9Z24S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4655452 b5E T> Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel


    OCR Scan     		PDF IRF9Z24S GG14137

    IRF5210

    Abstract: No abstract text available
    Text: PD 9.1434 International » » R e ctifie r IR F 5 2 1 0 PRELIMINARY HEXFET Power M O SFET • Advanced Process Technology • Ultra Low On-Resistancc • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


    OCR Scan     		PDF -100V T0-220 IRF5210

    pj 69 diode

    Abstract: FL014 RVM SOT223 FL014 Example mosfet SOT-223 marking code IOR b41 sot223 Ir314 pj 66 diode ON52 AN-994
    Text: International S Rectifier PD 9.1298 IRLL1905 PRELIMINARY HEXFET Power MOSFET • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling V dss = 55V f^DS on = 0.30Q Id = 1.6A D escription Fourth Generation HEXFETs from International Rectifier utilize advanced


    OCR Scan     		PDF IRLL1905 OT-223 pj 69 diode FL014 RVM SOT223 FL014 Example mosfet SOT-223 marking code IOR b41 sot223 Ir314 pj 66 diode ON52 AN-994

    5566-4

    Abstract: max3824
    Text: P D 9 .1 6 1 5 International I R Rectifier FA38SA50 PRELIMINARY H E X F E T P o w er M O S F E T Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance


    OCR Scan     		PDF FA38SA50 OT-227 5566-4 max3824

    in4151

    Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4151 1N4532 1N4148 1N4152

    1n4148 D035

    Abstract: DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 1n4148 D035 DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148

    AD7751 Energy metering IC

    Abstract: cd 1619 CP fm radio adp3420 HT 1000-4 power amplifier CHIP 8-PIN 2100 JRC AD80157 pin diagram for IC cd 1619 cp in fm pal 011 A SPEAKER OUTPUT IC 6 pin TRANSISTOR SMD CODE XI package SOT 363 AD7474
    Text: NEW PRODUCT APPLICATIONS - 1 9 9 9 spring edition +3.0V TO +5.25V +5V 6-LEAD LOAD CELL AVDD +5V/+3V DV dd ^ +V REF A D 7730 +A| n - a in ADC 24 BITS -V ref GND fc. 6705 Millcteek Drive, Unit l, Mississauga, ON L5N 5R9 Tel.: 905 812-4400 • Fax(905) 812-4459


    OCR Scan     		PDF ADF4206 ADF4208 ADF4206 ADF4207 ADF4208 ADF4207) ADF4206, AD7751 Energy metering IC cd 1619 CP fm radio adp3420 HT 1000-4 power amplifier CHIP 8-PIN 2100 JRC AD80157 pin diagram for IC cd 1619 cp in fm pal 011 A SPEAKER OUTPUT IC 6 pin TRANSISTOR SMD CODE XI package SOT 363 AD7474

    MIL-S-19500C

    Abstract: IN4444 MIL-S-19500 1N4532 D035 in4445 1N4148 1N4149 IN4305 1N4152
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N914A 1N914B BV @ 100/1A M in. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77SEC) Package Outline Package O utline Number 100 100 25 30 1.00 10 4 25 20 1.00 20 4 100


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 MIL-S-19500C IN4444 MIL-S-19500 1N4532 D035 in4445 1N4148 IN4305 1N4152

    triacs BTA 15 700

    Abstract: BTA06 AHS-50 btb 15 600 b
    Text: Æ T SCS-THOMSON *JÆ> nn S ll[LE®ra®R!lD Si BTA06 B/C BTB06 B/C STANDARD TRIACS FEATURES . HIGH SURGE CURRENT CAPABILITY . COMMUTATION : (dV/dt c> 5 V^is • BTA Family: INSULATING VOLTAGE= 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 B/C triac family are high perform­


    OCR Scan     		PDF BTA06 BTB06 E81734) BTA/BTB06 T0220AB triacs BTA 15 700 AHS-50 btb 15 600 b