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    DUROID 6010 BREAKDOWN VOLTAGE Search Results

    DUROID 6010 BREAKDOWN VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DUROID 6010 BREAKDOWN VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j378

    Abstract: duroid 6010 breakdown voltage 2731-100M 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB
    Text: 2731-100MR1 2731-100M 100 Watts, 36 Volts, 250µs, 10% Radar 2700-3100 MHz CASE OUTLINE 55KS-1 Common Base GENERAL DESCRIPTION The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 250µs pulse


    Original     		PDF 2731-100MR1 2731-100M 55KS-1 2731-100M 2200uF j378 duroid 6010 breakdown voltage 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB

    T491D476M020AS

    Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA0912-250 OT502A SCA74 613524/06/pp11 T491D476M020AS TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS

    Untitled

    Abstract: No abstract text available
    Text: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the


    Original     		PDF BLL1214-250R OT502A) BLL1214-250R

    200B

    Abstract: flange table
    Text: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the


    Original     		PDF BLL1214-250R OT502A) BLL1214-250R 200B flange table

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A


    Original     		PDF M3D379 BLL1214-250 OT502A SCA75 613524/03/pp10

    ATC200B

    Abstract: BLL1214-250 MLD861
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES


    Original     		PDF M3D379 BLL1214-250 OT502A SCA75 613524/03/pp10 ATC200B BLL1214-250 MLD861

    200WN

    Abstract: No abstract text available
    Text: BLA6G1011-200R Power LDMOS transistor Rev. 01 — 17 June 2009 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.


    Original     		PDF BLA6G1011-200R BLA6G1011-200R 200WN

    nxp TRANSISTOR SMD 13

    Abstract: No abstract text available
    Text: BLA6G1011-200R Power LDMOS transistor Rev. 02 — 1 March 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.


    Original     		PDF BLA6G1011-200R BLA6G1011-200R nxp TRANSISTOR SMD 13

    NV SMD TRANSISTOR

    Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A NV SMD TRANSISTOR philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511

    ROGERS DUROID

    Abstract: No abstract text available
    Text: BLA6G1011-200R Power LDMOS transistor Rev. 3 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.


    Original     		PDF BLA6G1011-200R ROGERS DUROID

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A

    250 B 340 smd Transistor

    Abstract: smd JH transistor BLA0912-250 T491D476M020AS
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A 103itions 250 B 340 smd Transistor smd JH transistor BLA0912-250 T491D476M020AS

    T491D226M020AS

    Abstract: T491D476M020AS smd JH transistor
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A BLA0912-250R T491D226M020AS T491D476M020AS smd JH transistor

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A

    smd JH transistor

    Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A smd JH transistor 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH

    Untitled

    Abstract: No abstract text available
    Text: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information


    Original     		PDF BLA6G1011-200R; BLA6G1011L -200RG OT502A OT502C OT502D BLA6G1011-200R L-200RG LS-200RG

    Untitled

    Abstract: No abstract text available
    Text: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information


    Original     		PDF BLA6G1011-200R; BLA6G1011L -200RG OT502A OT502C OT502D BLA6G1011-200R L-200RG LS-200RG

    Untitled

    Abstract: No abstract text available
    Text: BLL6G1214L-250 LDMOS L-band radar power transistor Rev. 1 — 16 February 2012 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information


    Original     		PDF BLL6G1214L-250

    transistor aaa

    Abstract: No abstract text available
    Text: BLL6G1214L-250 LDMOS L-band radar power transistor Rev. 1 — 16 February 2012 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information


    Original     		PDF BLL6G1214L-250 transistor aaa

    Untitled

    Abstract: No abstract text available
    Text: BLL6G1214L-250; BLL6G1214LS-250 LDMOS L-band radar power transistor Rev. 2 — 24 June 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1.


    Original     		PDF BLL6G1214L-250; BLL6G1214LS-250 BLL6G1214L-250 1214LS-250

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF