RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the
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6010LM,
RO3003
RO3035
RO3203
RO3006
RO3206
RO3010
RO3210
RO4003C
RO4350B
RO4403
Rogers RO4003
rt/duroid 5880
RO4450F
rogers 5880
RO3006
rogers laminate materials
RO4450B
RO3210
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smd-transistor DATA BOOK
Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
Text: APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION
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BLV2042
AN98018
BLV2042.
199lding
SCA57
smd-transistor DATA BOOK
SMD Transistor
rt/duroid 6006
TRANSISTOR SMD catalog
transistor SMD DK
Philips 2222-581
smd-transistor -1.am
Duroid 6006
SMD Transistor 6f
smd transistor l6
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smd transistor 6g
Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731-6G
BLS6G2731-6G
smd transistor 6g
6G smd transistor
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
nxp 544
200B
TAJD106K035R
transistor equivalent table
sot975c
radar circuit component
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Untitled
Abstract: No abstract text available
Text: 0912GN-300.Rev2 0912GN-300 300 Watts - 65 Volts, 128 s, 10% Broad Band Data Link 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-300 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain,
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0912GN-300
0912GN-300
55-KR
-128us
Hz-1215MHz
55-KR
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radar amplifier s-band
Abstract: radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID
Text: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731S-130
radar amplifier s-band
radar amplifier s-band 2.7 2.9 GHZ
ROGERS DUROID
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Untitled
Abstract: No abstract text available
Text: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731S-130
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BLL6H1214-500
Abstract: 800B
Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 01 — 20 January 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information
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BLL6H1214-500
BLL6H1214-500
800B
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transistor d 1302
Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
transistor d 1302
smd transistor 927
smd transistor equivalent table
Duroid 6006
sot922
radar circuit component
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amplifier TRANSISTOR 12 GHZ
Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
amplifier TRANSISTOR 12 GHZ
smd transistor w J 3 58
smd transistor equivalent table
smd transistor 927
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BLS6G2731-120
Abstract: No abstract text available
Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.
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BLS6G2731-120;
BLS6G2731S-120
BLS6G2731-120
6G2731S-120
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800B
Abstract: No abstract text available
Text: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
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BLL6H1214L-250;
BLL6H1214LS-250
BLL6H1214L-250
1214LS-250
800B
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BLS2933-100
Abstract: T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057
Text: BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor at a supply voltage of 32 V for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.
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BLS2933-100
BLS2933-100
T491D475K050AS
Duroid 6006
NV SMD TRANSISTOR
13N-50-057
23N-50-057
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SOT608B
Abstract: No abstract text available
Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 02 — 17 December 2008 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.
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BLS6G3135-20;
BLS6G3135S-20
BLS6G3135-20
6G3135S-20
SOT608B
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BLA1011-300
Abstract: No abstract text available
Text: BLA1011-300 Avionics LDMOS transistors Rev. 02 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance
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BLA1011-300
BLA1011-300
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Untitled
Abstract: No abstract text available
Text: BLL6H0514-25 LDMOS driver transistor Rev. 03 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
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BLL6H0514-25
BLL6H0514-25
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BLS6G3135S-120
Abstract: BLS6G3135-120
Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-120;
BLS6G3135S-120
BLS6G3135-120
6G3135S-120
BLS6G3135S-120
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BLL6H0514-25
Abstract: No abstract text available
Text: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
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BLL6H0514-25
BLL6H0514-25
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JESD625-A
Abstract: No abstract text available
Text: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information
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BLL6H0514L-130;
BLL6H0514LS-130
BLL6H0514L-130
0514LS-130
JESD625-A
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BLS7G2933S-150
Abstract: radar amplifier s-band SOT922-1 JESD625-A
Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS7G2933S-150
BLS7G2933S-150
radar amplifier s-band
SOT922-1
JESD625-A
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Untitled
Abstract: No abstract text available
Text: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications at 1030 MHz. Table 1. Test information
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BLA6H0912L-1000;
BLA6H0912LS-1000
BLA6H0912L-1000
0912LS-1000
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Untitled
Abstract: No abstract text available
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
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Untitled
Abstract: No abstract text available
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
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Untitled
Abstract: No abstract text available
Text: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
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BLL6H0514-25
BLL6H0514-25
771-BLL6H0514-25112
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Untitled
Abstract: No abstract text available
Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS7G2933S-150
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