Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DUAL TRANSISTOR O2 Search Results

    DUAL TRANSISTOR O2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL TRANSISTOR O2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


    Original     		PDF OT-363 QW-R218-026

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


    Original     		PDF OT-26 QW-R218-026

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


    Original     		PDF OT-26 QW-R218-026

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS  DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor.  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.


    Original     		PDF UD22K UD22K UD22KG-AL6-R OT-363 QW-R221-020

    microcontroller m

    Abstract: BSTBY PWM IC 8 PIN pwm system TB6592FL
    Text: TB6592FL Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6592FL Dual-Bridge Driver IC for DC motor TB6592FL is a dual-bridge driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can chose one of four modes such as CW,


    Original     		PDF TB6592FL TB6592FL microcontroller m BSTBY PWM IC 8 PIN pwm system

    TB6552

    Abstract: SSOP16 SSOP16-P-225-0 TB6552FL TB6552FN
    Text: TB6552FN/FL Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6552FN,TB6552FL Dual-Bridge Driver IC for DC motor TB6552FN/FL is a dual-bridge driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can chose one of four modes such as


    Original     		PDF TB6552FN/FL TB6552FN TB6552FL TB6552FN/FL TB6552FN TB6552 SSOP16 SSOP16-P-225-0 TB6552FL

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN7645B MCH6536 Bipolar Transistor http://onsemi.com –12V 15V, (–1A)1.4A, Low VCE(sat) Complementary Dual MCPH6 Applications • MOSFET gate drivers, low-frequency power amplifier, high-speed switching, motor drivers Features • •


    Original     		PDF EN7645B MCH6536

    Transformer MG-200

    Abstract: STK4171 STK4171x
    Text: Ordering number:ENN3671 Thick Film Hybrid IC STK4171X 2ch AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.02%) Features Package Dimensions • Built-in muting transistor unit:mm 4146 Function [STK4171X] • Dual-channel AF power amplifier 105.0


    Original     		PDF ENN3671 STK4171X STK4171X] SIP-22 600ic Transformer MG-200 STK4171 STK4171x

    STK4171X

    Abstract: STK4171
    Text: Ordering number:ENN3671 Thick Film Hybrid IC STK4171X 2ch AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.02%) Features Package Dimensions • Built-in muting transistor unit:mm 4146 Function [STK4171X] • Dual-channel AF power amplifier 105.0


    Original     		PDF ENN3671 STK4171X STK4171X] SIP-22 STK4171X STK4171

    2N3904 TRANSISTOR SMD

    Abstract: HCPL-5501 2n3904 smd pdf data application note 2n3904 smd pin configuration diagram class h amps optocoupler smd 16 pin SMD MARKING CODE transistor smd transistor marking PA 4N55 6N135
    Text: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Technical Data Agilent 4N55*, 5962-87679, HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, 5962-90854, HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part


    Original     		PDF HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, HCPL-550X MIL-PRF-38534 MIL-PRF38534 MIL-PRF-38534. 5989-1659EN 2N3904 TRANSISTOR SMD HCPL-5501 2n3904 smd pdf data application note 2n3904 smd pin configuration diagram class h amps optocoupler smd 16 pin SMD MARKING CODE transistor smd transistor marking PA 4N55 6N135

    Untitled

    Abstract: No abstract text available
    Text: 4N55*, 5962-87679, HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, 5962-90854, HCPL-550X Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Data Sheet *See matrix for available extensions. Description Features These units are single, dual and quad channel, hermetically


    Original     		PDF HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, HCPL-550X MIL-PRF-38534 QML-38534 MIL-PRF-38534. 5989-1659EN

    KB836

    Abstract: KB836A KB836B KB836L
    Text: PHOTOCOUPLER KB836 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package


    Original     		PDF KB836 KB836 E225308 DSAD1547 APR/28/2003 12-pin 30pcs/each KB836A KB836B KB836L

    KB816B

    Abstract: KB816D KB816 KB816AB
    Text: PHOTOCOUPLER KB816 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package


    Original     		PDF KB816 KB816 E225308 DSAD1545 APR/28/2003 100pcs/each KB816B KB816D KB816AB

    KB826

    Abstract: KB826A KB826B KB826L 826 8-PIN
    Text: PHOTOCOUPLER KB826 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 0Vrms) 3.Compact dual-in-line package


    Original     		PDF KB826 KB826 E225308 DSAD1546 APR/28/2003 50pcs/each KB826A KB826B KB826L 826 8-PIN

    5898

    Abstract: KB846 KB846A KB846B KB846L
    Text: PHOTOCOUPLER KB846 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package


    Original     		PDF KB846 KB846 E225308 DSAD1548 APR/28/2003 16-pin 25pcs/each 5898 KB846A KB846B KB846L

    Untitled

    Abstract: No abstract text available
    Text: 7*^ 12 4 3 TRANSISTOR MODULE 00021 37 4AA QCA30B/QCB3QA40/60 UL;E76102(M QCA30B and QCB30A are dual Darlin­ 94max gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA30B/QCB3QA40/60 E76102 QCA30B QCB30A 94max 400/600V

    D 1398 Transistor

    Abstract: BFG32 BFG96 DD311
    Text: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV


    OCR Scan     		PDF G03114b BFG32 OT103 BFG96. OT103. D 1398 Transistor BFG32 BFG96 DD311

    dual P-CHANNEL 30V DS MOSFET

    Abstract: NDS8958 Dual N & P-Channel MOSFET
    Text: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS8958 035fi b5D113D dual P-CHANNEL 30V DS MOSFET NDS8958 Dual N & P-Channel MOSFET

    pmi dac08

    Abstract: DAC08
    Text: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor


    OCR Scan     		PDF MAT-03 100pV 190MHz DAC-08, 992mA 008mA pmi dac08 DAC08

    gs 1117 ax

    Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
    Text: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range


    OCR Scan     		PDF ALD1107/ALD1117 1107/ALD 107/A ALD1106 ALD1106 1107/A ALD1101 LD1102 LD1103) gs 1117 ax 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117

    MS6130L-70JC

    Abstract: No abstract text available
    Text: MS6130 FEBRUARY 1992 1K x 8 CMOS Dual Port SRAM FEATURES DESCRIPTION • High-speed - 55/70/90 ns The MOSEL MS6130 is a 8,192 bit dual port static random access memory organized as 1,024 words by 8 bits. It is built with MOSEL's high perofrmance twin tub CMOS process. Eight-transistor full CMOS memory cell


    OCR Scan     		PDF MS6130 MS6130 48-pin 52-pin 325mW MS6130-70PC MS6130L-70PC MS6130-90PC MS6130L-90PC MS6130L-70JC

    CI D 2530

    Abstract: IC A 2531
    Text: E s DUAL HIGH-SPEED TRANSISTOR OPTOCOUPLERS ï i OPTOELECTRONICS HCPL-2530 HCPL-2531 PACKAGE DIMENSIONS DESCRIPTION f t f t db ¿3 The HCPL-2530/31 dual o pto cou p le rs contain tw o com ple te ly separated 700 nm GaAsP LED em itters each o ptica lly c o up le d to


    OCR Scan     		PDF HCPL-2530 HCPL-2531 HCPL-2530/31 10kV//xS C1954 74bb851 CI D 2530 IC A 2531

    FLP2531

    Abstract: phototransistor FPT 100
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP2530, TLP2531 DATA GaAfAs IRED & PHOTO IC TLP2530 DEGITAL LOGIC ISOLATION LINE RECEIVER POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a


    OCR Scan     		PDF TLP2530, TLP2531 TLP2530) TLP2530 TLP2531 FLP2531 phototransistor FPT 100

    Untitled

    Abstract: No abstract text available
    Text: <Q £> C-MOS NJ 2-OUTPUT POSITIVE VOLTAGE The NJU7204 series is a 2-output C-MOS positive voltage regulator which contains dual system of internal accurate voltage reference, error amplifier, control transistor output voltage setting resistor and strobe circuit.


    OCR Scan     		PDF NJU7204 NJU7204M 30iiiA 01/iF