Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DUAL RF TRANSISTOR Search Results

    DUAL RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    VHF Transceiver IC

    Abstract: NE5200 NE5200D NE602A SA5200D RF Radio frequency IC, 8pin 1.2ghz transmitter antenna philips radio 900MHz tv receiver schematic diagram PHILIPS
    Text: Philips Semiconductors RF Communications Products Product specification RF dual gain-stage DESCRIPTION NE/SA5200 FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for


    Original     		PDF NE/SA5200 NE/SA5200 1200MHz 900MHz 500MHz 100MHz 10MHz VHF Transceiver IC NE5200 NE5200D NE602A SA5200D RF Radio frequency IC, 8pin 1.2ghz transmitter antenna philips radio 900MHz tv receiver schematic diagram PHILIPS

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    cf sot-363

    Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
    Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-363 SCT-598 cf sot-363 GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    GaAs pHEMT LOW SOT-343

    Abstract: CLY 2
    Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF OT-363 VQFN-16-2 SCT-598 GaAs pHEMT LOW SOT-343 CLY 2

    MQE9

    Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		PDF HD155121F ADE-207-265A HD155121F 48-pin MQE9 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors

    Hitachi DSA002743

    Abstract: Nippon capacitors
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		PDF HD155121F ADE-207-265 HD155121F 48-pin Hitachi DSA002743 Nippon capacitors

    HD155121F

    Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		PDF HD155121F ADE-207-265A HD155121F 48-pin Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5

    Untitled

    Abstract: No abstract text available
    Text: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520Y OT363 BFU520Y AEC-Q101

    MAX4589

    Abstract: MAX4589CAP MAX4589CPP MAX4589CWP MAX4589EAP MAX4589EPP MAX4589EWP Nippon capacitors
    Text: 19-1424; Rev 0; 1/99 Low-Voltage, High-Isolation, Dual 2-Channel RF/Video Multiplexer Features The MAX4589 low-voltage, dual 2-channel multiplexer is designed for RF and video signal processing at frequencies up to 200MHz in 50Ω and 75Ω systems. On-chip


    Original     		PDF MAX4589 200MHz MAX4589 MAX4589CAP MAX4589CPP MAX4589CWP MAX4589EAP MAX4589EPP MAX4589EWP Nippon capacitors

    Nippon capacitors

    Abstract: No abstract text available
    Text: 19-1424; Rev 0; 1/99 Low-Voltage, High-Isolation, Dual 2-Channel RF/Video Multiplexer Features The MAX4589 low-voltage, dual 2-channel multiplexer is designed for RF and video signal processing at frequencies up to 200MHz in 50Ω and 75Ω systems. On-chip


    Original     		PDF MAX4589 200MHz MAX4589C 21-0056C A20-5* Nippon capacitors

    FM reciever CIRCUIT DIAGRAM

    Abstract: abstract for fm transmitter two stage amplifier IS98A design and simulation of FM transmitter using DIGITAL IC abstract for fm transmitter two stage abstract for fm receiver three stage MAX2323 MAX2325 MAX2329 duplexer 2.5 GHz Design using ADS
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf design, rfic, rf, cdma, rfics, rf ics, rf ic Sep 22, 2000 APPLICATION NOTE 289 Triple/Dual/Single Mode CDMA LNA/Mixers Receiver System Requirements Abstract: This technical note is focused on how to determine the system specification of a CDMA receiver in


    Original     		PDF MAX2323/25/29 com/an289 MAX2320: MAX2323: MAX2338: MAX2538: AN289, APP289, Appnote289, FM reciever CIRCUIT DIAGRAM abstract for fm transmitter two stage amplifier IS98A design and simulation of FM transmitter using DIGITAL IC abstract for fm transmitter two stage abstract for fm receiver three stage MAX2323 MAX2325 MAX2329 duplexer 2.5 GHz Design using ADS

    Untitled

    Abstract: No abstract text available
    Text: MC13751 Dual-Band Upmixer and Driver Amplifier DUAL–BAND UPMIXER AND DRIVER AMPLIFIER The MC13751 is an integrated transmit upmixer and driver amplifier designed for use in cellular phones. It includes two mixers and two RF step attenuators. The device is fabricated using Motorola’s Advanced RF


    Original     		PDF MC13751 MC13751FCR2 MC751

    MRF141G

    Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER
    Text: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS


    Original     		PDF MRF141G MRF141G MRF141G data sheet push pull power amplifier MOSFET RF POWER

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    Untitled

    Abstract: No abstract text available
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    OCR Scan     		PDF HD155121F ADE-207-265 HD155121F 48-pin cop12 cop22

    Untitled

    Abstract: No abstract text available
    Text: O b f*c tlv * pacification P h ilip * Sem iconductor* RF Com m unication* Product* Low-power dual frequency synthesizer for radio communications UMA1015M FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015M is a low-power dual frequency


    OCR Scan     		PDF UMA1015M UMA1015M

    900mhz frequency generator

    Abstract: BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier
    Text: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for


    OCR Scan     		PDF NE5200/SA5200 1200MHz NE/SA5200 95fiA 900MHzut 711005b 10MHz -26dBm, 900mhz frequency generator BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier

    NE5200D

    Abstract: tv receiver schematic diagram PHILIPS 900M Wideband Amplifier
    Text: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for


    OCR Scan     		PDF NE/SA5200 1200MHz NE/SA5200 900MHz 100ra 50MHz -26dBm, 100pF NE5200D tv receiver schematic diagram PHILIPS 900M Wideband Amplifier

    900mhz frequency generator

    Abstract: if amplifier specification for 900MHz transceiver tv receiver schematic diagram PHILIPS 1200MHZ lna philips radio 900MHz
    Text: Philips Semiconductors Product specification RF dual gain-stage SA5200 DESCRIPTION PIN CONFIGURATION The SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for battery operated


    OCR Scan     		PDF SA5200 SA5200 1200MHz 10MHz at-26dB 50MHz -26dBm 100pF 900mhz frequency generator if amplifier specification for 900MHz transceiver tv receiver schematic diagram PHILIPS 1200MHZ lna philips radio 900MHz

    Untitled

    Abstract: No abstract text available
    Text: RF RF2152 Preliminary MICRO DEVICES POWER A M P L IF IE R S DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3 V POWER AM PLIFIER m anufactured on an advanced G allium A rsenide H etero­ junction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in dual-m ode


    OCR Scan     		PDF RF2152

    3SK132

    Abstract: 3SK132A si2494 g2sc ETEL
    Text: MOS FIELD EFFECT TRANSISTOR 3SK132A RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Suitable for use as RF amplifier in UHF TV tuner. RF Amp. for half wave length resonator : X/2


    OCR Scan     		PDF 3SK132A 3SK132 3SK132A si2494 g2sc ETEL

    transistor ne 107

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual a m plifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down m ode saves current for


    OCR Scan     		PDF NE5200 SA5200 1200MHz NE/SA5200 100ra 10MHz 100pF transistor ne 107