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    DUAL PNP SMD Search Results

    DUAL PNP SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd

    DUAL PNP SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOC3810HRB

    Abstract: No abstract text available
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N3810HR 2N3810HR SOC3810HRB

    ESCC 5207-005

    Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N3810HR 2N3810HR ESCC 5207-005 SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 LCC6 bipolar junction transistor LCC-6 marking code SMD ic

    SOC3810HRB

    Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N3810HR 2N3810HR SOC3810HRB transistor st 431 SOC38 ESCC SOC3810 2N3810

    ESCC 5207 005

    Abstract: 2N3810HR 2N3810HRG
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor


    Original     		PDF 2N3810HR 2N3810HR DocID15385 ESCC 5207 005 2N3810HRG

    Untitled

    Abstract: No abstract text available
    Text: LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications. Using an optimized VIP Vertically Integrated PNP process,


    Original     		PDF LP2967

    ELECTROLYTIC capacitor, .3000 uF 5V

    Abstract: 5v input 5v output regulator smd
    Text: LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications. Using an optimized VIP Vertically Integrated PNP process,


    Original     		PDF LP2967 ELECTROLYTIC capacitor, .3000 uF 5V 5v input 5v output regulator smd

    LP2967IMM-2528

    Abstract: LP2967 LP2967IMM-2533 LP2967IMM-2626 LP2967IMM-2828 LP2967IMMX-2528 LP2967IMMX-2533 LP2967IMMX-2626 LP2967IMMX-2828
    Text: LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications. Using an optimized VIP Vertically Integrated PNP process,


    Original     		PDF LP2967 LP2967 LP2967IMM-2528 LP2967IMM-2533 LP2967IMM-2626 LP2967IMM-2828 LP2967IMMX-2528 LP2967IMMX-2533 LP2967IMMX-2626 LP2967IMMX-2828

    E20A

    Abstract: LM6118 LM6118N LM6218AN LM6218N
    Text: LM6118/LM6218 Fast Settling Dual Operational Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gain-compensated dual operational amplifiers with ± 20 mA output drive capability. The PNP input stage has a typical


    Original     		PDF LM6118/LM6218 LM6118 E20A LM6118 LM6118N LM6218AN LM6218N

    g10 smd transistor

    Abstract: LM6218 schematic diagram ac inverter LM6218AN LM6218N E20A J08A LM6118 LM6118J LM6118N
    Text: LM6118 LM6218 Fast Settling Dual Operational Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gaincompensated dual operational amplifiers with g 20 mA output drive capability The PNP input stage has a typical bias


    Original     		PDF LM6118 LM6218 20-3A g10 smd transistor LM6218 schematic diagram ac inverter LM6218AN LM6218N E20A J08A LM6118J LM6118N

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type General purpose Dual PNP Transistors FMS4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating


    Original     		PDF 300mW -50mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type General purpose Dual PNP Transistors FMS3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating


    Original     		PDF 300mW -50mA 100MHz

    BC237

    Abstract: equivalent to BC177 2n6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431

    Transistor 2N2905A

    Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


    Original     		PDF MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type General purpose Dual PNP Transistors KTA501U SOT-353 Unit: mm +0.1 -0.1 1.3 • Features 0.525 0.65 0.36 +0.15 2.3-0.15 ● Collector Curren: IC=-150mA +0.1 1.25-0.1 ● Power dissipation: PC=200mW +0.05 0.1-0.02 Q1 0.1max +0.1 0.3-0.1


    Original     		PDF KTA501U OT-353 -150mA 200mW -100mA, -10mA 100MHz

    MUN5111DW1T1

    Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5136DW1T1
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5111DW1T1 r14525 MUN5111DW1T1/D MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5136DW1T1

    UMC3NT1

    Abstract: SMD310
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF r14525 UMC3NT1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-353

    6 pin TRANSISTOR SMD CODE PA

    Abstract: 2N3904 TRANSISTOR SMD 2N2222A SMD 2N3906 SMD smd transistor 26 smd TRANSISTOR NY transistor SMD 2n3904 ny smd transistor dual 2N3904 NPN Transistor smd 2n2907a
    Text: New Product Announcement Dual Transistors Sample Devices SUPER TM available mini upon request. SOT-26 Actual Size Available devices include: PNP and NPN Small Signal Transistors Features • Galvanically Isolated • Requires less board space than 2 individual devices.


    Original     		PDF OT-26 OT-26 CMXT2222A CMXT2907A CMXT3904 -SOT-26 6 pin TRANSISTOR SMD CODE PA 2N3904 TRANSISTOR SMD 2N2222A SMD 2N3906 SMD smd transistor 26 smd TRANSISTOR NY transistor SMD 2n3904 ny smd transistor dual 2N3904 NPN Transistor smd 2n2907a

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF r14525

    34 sot-363

    Abstract: MUN5136DW1T1
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5111DW1T1 r14525 MUN5111DW1T1/D 34 sot-363 MUN5136DW1T1

    E20A

    Abstract: LM6118 LM6118N LM6218AN LM6218N
    Text: General Description Features The LM6118 series are monolithic fast-settling unity-gain-compensated dual operational amplifiers with ± 20 mA output drive capability. The PNP input stage has a typical bias current of 200 nA, and the operating supply voltage is


    Original     		PDF LM6118 ds010254 E20A LM6118 LM6118N LM6218AN LM6218N

    MUN5111DW1T1

    Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1
    Text: MOTOROLA Order this document by MUN5111DW1T1/D SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF MUN5111DW1T1/D MUN5111DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1

    lm6116

    Abstract: No abstract text available
    Text: LM6118/LM6218 & Nation a I Semiconductor LM6118/LM6218 Fast Settling Dual Operational Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gaincompensated dual operational amplifiers with ± 20 mA out­ put drive capability. The PNP input stage has a typical bias


    OCR Scan     		PDF LM6118/LM6218 LM6118/LM6218 LM6118 TL/H/10254-19 LM6118 lm6116

    6118E

    Abstract: No abstract text available
    Text: LM6118/LM6218 £3 National ÆM Semiconductor LM6118/LM6218 Fast Settling Dual Operation Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gaincompensated dual operational amplifiers with ± 2 0 mA out­ put drive capability. The PNP input stage has a typical bias


    OCR Scan     		PDF LM6118/LM6218 LM6118/LM6218 LM6118 V2LM6118 6118E