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    DUAL P-CHANNEL MOSFET 30V Search Results

    DUAL P-CHANNEL MOSFET 30V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    DUAL P-CHANNEL MOSFET 30V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MLP832

    Abstract: ZXMP62M832 ZXMP62M832TA
    Text: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure


    Original     		PDF ZXMP62M832 MLP832 ZXMP62M832 ZXMP62M832TA

    945e

    Abstract: MS-012AA RF1K49223 RF1K4922396 TB334 tc-519 6s2a
    Text: RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49223 RF1K49223 945e MS-012AA RF1K4922396 TB334 tc-519 6s2a

    MS-012AA

    Abstract: RF1K49223 RF1K4922396 TB334 590E-6
    Text: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET File Number 4322.1 Features • 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49223 RF1K49223 MS-012AA RF1K4922396 TB334 590E-6

    528E-3

    Abstract: No abstract text available
    Text: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET 4322.1 Features • 2.5A, 30V Title The RF1K49223 Dual P-Channel power MOSFET is F1K4 manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49223 RF1K49223 TA49223. LitMS-012AA 528E-3

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    FDS8858CZ

    Abstract: fds8858
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858

    FDS8858CZ

    Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180

    FDS8858

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858

    CG8 marking

    Abstract: RG marking code transistor
    Text: Central CMLDM8002AG SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002AG is a dual chip P-Channel Enhancement-mode Field Effect Transistor, manufactured by the P-Channel DMOS Process,


    Original     		PDF CMLDM8002AG CMLDM8002AG OT-563 200mA CG8 marking RG marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features • Low VGS th : VGS(th)=1.0~3.0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A)


    Original     		PDF SUF2001 13-MAR-13 KSD-T7F002-001

    Untitled

    Abstract: No abstract text available
    Text: Si3991DV Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS


    Original     		PDF Si3991DV Si3991DV-T1 S-32135--Rev. 27-Oct-03

    Si3991DV

    Abstract: 72427
    Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS


    Original     		PDF Si3991DV Si3991DV-T1--E3 S-40575--Rev. 29-Mar-04 72427

    Untitled

    Abstract: No abstract text available
    Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS


    Original     		PDF Si3991DV Si3991DV-T1--E3 08-Apr-05

    Si3991DV

    Abstract: No abstract text available
    Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS


    Original     		PDF Si3991DV Si3991DV-T1--E3 18-Jul-08

    C503 power transistor

    Abstract: CWDM305P
    Text: CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed


    Original     		PDF CWDM305PD C503 power transistor CWDM305P

    Untitled

    Abstract: No abstract text available
    Text: CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed


    Original     		PDF CWDM305PD 23-August

    Untitled

    Abstract: No abstract text available
    Text: CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed


    Original     		PDF CWDM305PD 23-August

    P3098LD

    Abstract: DMP3098LSD J-STD-020D p3098
    Text: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PROD UCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65mΩ @ VGS = -10V


    Original     		PDF DMP3098LSD AEC-Q101 J-STD-020D DS31448 P3098LD DMP3098LSD J-STD-020D p3098

    p3098

    Abstract: No abstract text available
    Text: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65m @ VGS = -10V • 115m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMP3098LSD AEC-Q101 J-STD-020D DS31448 p3098

    fairchild soic marking

    Abstract: q2 marking soic-8
    Text: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4935 fairchild soic marking q2 marking soic-8

    Si6955DQ

    Abstract: No abstract text available
    Text: Si6955DQ Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6955DQ

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1358B ECH8660 Power MOSFET http://onsemi.com 30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8 Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original     		PDF ENA1358B ECH8660 ECH8660 PW10s, 1200mm2 1200mm2ere A1358-8/8

    FDS4935A

    Abstract: No abstract text available
    Text: FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4935A FDS4935A

    FDS4935

    Abstract: switch fairchild C2335
    Text: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4935 FDS4935 switch fairchild C2335