Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2
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AP2625GY-HF-3
OT-26
OT-26
12REF
37REF
90REF
20REF
95REF
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2623GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Low Gate Charge D2 D1 Low On-resistance BV DSS -30V R DS ON 170mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description
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AP2623GY-HF-3
OT-26
OT-26
12REF
37REF
90REF
20REF
95REF
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Untitled
Abstract: No abstract text available
Text: DMP3028LSD 30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Description • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(ON and yet maintain superior switching Mechanical Data V(BR)DS
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DMP3028LSD
DS35966
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Full-bridge inverter
Abstract: SSM9930M
Text: SSM9930M DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Full-bridge applications, such as N-CH P2G N2D/P2D P1S/P2S P1G LCD monitor inverter N1D/P1D SO-8 30V R DS ON 33mΩ 6.3A ID N2G N1S/N2S BV DSS P-CH
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SSM9930M
SSM9930M
Full-bridge inverter
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4957agm
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4957AGM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 26mΩ Fast Switching Performance ID -7.4A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2
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AP4957AGM-HF-3
AP4957AGM-HF-3
AP4957A
4957AGM
4957agm
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4957gm
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4957GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 24mΩ Fast Switching Performance ID -7.7A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1
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AP4957GM-HF-3
AP4957GM-HF-3
AP4957
4957GM
4957gm
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STS3DPF30L
Abstract: No abstract text available
Text: STS3DPF30L DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DPF30L • ■ ■ V DSS R DS on ID 30 V < 0.16 Ω 3A TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
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STS3DPF30L
STS3DPF30L
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SSM4957M
Abstract: ssm4957gm
Text: SSM4957 G M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics SO-8 -30V BV DSS D2 G1 S1 R DS(ON) 24mΩ ID -7.7A G2 S2 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the
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SSM4957
SSM4957M
SSM4957GM.
ssm4957gm
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DUAL P
Abstract: STS3DPF30L max8823
Text: STS3DPF30L DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DPF30L • ■ ■ V DSS R DS on ID 30 V < 0.16 Ω 3 A TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
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STS3DPF30L
DUAL P
STS3DPF30L
max8823
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4953GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low Gate Charge R DS ON 53mΩ Fast Switching Performance ID -5A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1 Advanced Power MOSFETs from APEC provide the designer with
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AP4953GM-HF-3
AP4953GM-HF-3
AP4953
4953GM
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Untitled
Abstract: No abstract text available
Text: SSG4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 4.5A - 30V 1 75 @VGS = - 5V 90 @VGS = - 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.
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SSG4931
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SSM4953
Abstract: No abstract text available
Text: SSM4953 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max 7 6 5 60 @VGS = -10V -4.5A -30V SO-8 8 1 2 95 @VGS = -4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.
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SSM4953
SSM4953
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Untitled
Abstract: No abstract text available
Text: SSM4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5.5A - 30V 1 70 @VGS = - 5V 2 80 @VGS = - 4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON). G1 (2)
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SSM4931
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SSM4935
Abstract: No abstract text available
Text: SSM4935A Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 RDS(ON) (mΩ) Max 8 7 25 @VGS = - 10V - 7.5A - 30V 45 @VGS = - 5V 1 2 3 60 @VGS = - 4.5V 6 5 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON).
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SSM4935A
SSM4935
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4953p
Abstract: AF4953P
Text: AF4953P Dual P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack
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AF4953P
015x45
4953p
AF4953P
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4953P
Abstract: AF4953P mosfet 4953 SECT10
Text: AF4953P Dual P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack
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AF4953P
015x45
4953P
AF4953P
mosfet 4953
SECT10
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5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical
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Si4418DY
130mOhm@
Si4420BDY
Si6928DQ
35mOhm@
Si6954ADQ
53mOhm@
SiP2800
SUM47N10-24L
24mOhm@
5a6 zener diode
dual mosfet dip
diode zener 6.2v 1w
10v ZENER DIODE
5A6 smd sot23
DG9415
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IRF7509PBF
Abstract: IRF7509 IRF P CHANNEL MOSFET IRF7501
Text: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 N-CHANNEL MOSFET
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IRF7509PbF
EIA-481
EIA-541.
IRF7509PBF
IRF7509
IRF P CHANNEL MOSFET
IRF7501
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P-Channel mosfet 400v to220
Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages
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CM600HA-5F
CM450HA-5F
CM350DU-5F
CM200TU-5F
CT60AM-18B
P-Channel mosfet 400v to220
IGBT DRIVE 500V 300A
400V switching transistor 0,3A mosfet
forklift
Microwave Oven Inverter Control IC
apec
CT60AM-18B
igbt 100a 150v
ct60am
Transistor Mosfet N-Ch 30V
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Untitled
Abstract: No abstract text available
Text: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 G1 S2 G2 N-CHANNEL MOSFET
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IRF7509PbF
EIA-481
EIA-541.
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STripFET
Abstract: STS3DPFS30L
Text: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.16Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30L
STripFET
STS3DPFS30L
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STS3DPFS30L
Abstract: No abstract text available
Text: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30L
STS3DPFS30L
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8SS138
Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T
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TN0205AD*
TN0200T
OT-363
OT-23
BSH105
GF6968A
GF6968E
GF9926
GF4126
8SS138
GFP80N03
SFB50N03
BS170 bss138
2N7002 60V SOT-23
Fet irfz44n
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SSD2007
Abstract: LS125A mosfet n-channel 12 amperes Power MOSFET 50V 20A
Text: DUAL N-CHANNEL POWER MOSFET SSD2007 FEATURES • Extremely Lower R 8SOIC ds o ni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability
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SSD2007
SSD2007
250eA
LS125A
mosfet n-channel 12 amperes
Power MOSFET 50V 20A
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