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    DUAL N-MOSFET 30V 1A Search Results

    DUAL N-MOSFET 30V 1A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2754GR-E1-A Renesas Electronics Corporation Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2752GR-E1-AT Renesas Electronics Corporation Nch Dual Power Mosfet 30V 8.0A 23Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2754GR-E2-A Renesas Electronics Corporation Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8 Visit Renesas Electronics Corporation Buy
    HAT3029R-EL-E Renesas Electronics Corporation Nch/Pch Dual Power Mosfet 30V 6A 34Mohm Sop8 Visit Renesas Electronics Corporation
    HAT2093R-EL-E Renesas Electronics Corporation Nch Dual Power Mosfet 30V 9A 23Mohm Sop8 Visit Renesas Electronics Corporation
    HAT3006R-EL-E Renesas Electronics Corporation Nch/Pch Dual Power Mosfet 30V 6.5A 45Mohm Sop8 Visit Renesas Electronics Corporation

    DUAL N-MOSFET 30V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,


    Original     		PDF HUF76105DK8 6105D

    iss314

    Abstract: log sheet air conditioning Schottky Diode 40V 5A dual Schottky Diode 40V 5A MLP832 ZXMNS3BM832
    Text: ZXMNS3BM832 MPPS Miniature Package Power Solutions 30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY N Channel MOSFET- V BR DSS =30V; RSAT(on) =0.18 ; D = 2.7A Schottky Diode - VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovation 3mm x 2mm MLP this combination dual


    Original     		PDF ZXMNS3BM832 500mV iss314 log sheet air conditioning Schottky Diode 40V 5A dual Schottky Diode 40V 5A MLP832 ZXMNS3BM832

    Untitled

    Abstract: No abstract text available
    Text: FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a


    Original     		PDF FDS6990S FDS6990S FDS6990A

    Untitled

    Abstract: No abstract text available
    Text: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a


    Original     		PDF FDS6990AS FDS6990AS FDS6990A

    FDS6990S

    Abstract: FDS6990A
    Text: FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a


    Original     		PDF FDS6990S FDS6990S FDS6990A FDS6990A

    MOSFET and parallel Schottky diode

    Abstract: CBVK741B019 F011 F63TNR F852 FDS6990A FDS6990S FDS9953A L86Z
    Text: FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a


    Original     		PDF FDS6990S FDS6990S FDS6990A MOSFET and parallel Schottky diode CBVK741B019 F011 F63TNR F852 FDS6990A FDS9953A L86Z

    MDS5651

    Abstract: mds565 60V dual N-Channel trench mosfet mosfet gate source voltage 20v trench mosfet MOSFET N
    Text: Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ General Description Features The MDS5651 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability VDS = 30V ID = 7.5A @VGS = 10V


    Original     		PDF MDS5651 MDS5651­ mds565 60V dual N-Channel trench mosfet mosfet gate source voltage 20v trench mosfet MOSFET N

    FDS8858CZ

    Abstract: fds8858
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858

    FDS8858CZ

    Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180

    FDS8858

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    MOSFET NOTEBOOK

    Abstract: FDMS9600S Q235
    Text: FDMS9600S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 12A Power 56 package.


    Original     		PDF FDMS9600S FDMS9600S MOSFET NOTEBOOK Q235

    MOSFET NOTEBOOK

    Abstract: FDMS9600S
    Text: FDMS9600S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 12A Power 56 package.


    Original     		PDF FDMS9600S FDMS9600S MOSFET NOTEBOOK

    FDMS9620S

    Abstract: MOSFET NOTEBOOK
    Text: FDMS9620S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual „ Max rDS on = 21.5mΩ at VGS = 10V, ID = 7.5A Power 56 package.


    Original     		PDF FDMS9620S FDMS9620S MOSFET NOTEBOOK

    Untitled

    Abstract: No abstract text available
    Text: AP4224GM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Dual N MOSFET Package G2 S2 ▼ RoHS Compliant & Halogen-Free SO-8 S1 BVDSS 30V


    Original     		PDF AP4224GM-HF 100ms

    ao4914

    Abstract: No abstract text available
    Text: AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous


    Original     		PDF AO4914 AO4914

    Untitled

    Abstract: No abstract text available
    Text: AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous


    Original     		PDF AO4914 AO4914

    Untitled

    Abstract: No abstract text available
    Text: AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4916 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous


    Original     		PDF AO4916 AO4916

    FDMS9620S

    Abstract: No abstract text available
    Text: FDMS9620S Dual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Features Q1: N-Channel General Description „ Max rDS on = 21.5mΩ at VGS = 10V, ID = 7.5A This device includes two specialized MOSFETs in a unique dual „ Max rDS(on) = 29.5mΩ at VGS = 4.5V, ID = 6.5A


    Original     		PDF FDMS9620S FDMS9620S

    S2DNF30L

    Abstract: JESD97 STS2DNF30L
    Text: STS2DNF30L Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS2DNF30L 30V <0.011Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Description This Power MOSFET is the latest development of


    Original     		PDF STS2DNF30L S2DNF30L JESD97 STS2DNF30L

    S2DNF30L

    Abstract: STS2DNF30L JESD97
    Text: STS2DNF30L Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET Power MOSFET Features Type VDSS RDS on ID STS2DNF30L 30V <0.11Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Description This Power MOSFET is the latest development of


    Original     		PDF STS2DNF30L STS2DNF30Land S2DNF30L STS2DNF30L JESD97

    Untitled

    Abstract: No abstract text available
    Text: STS2DNF30L Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS2DNF30L 30V <0.011Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Description This Power MOSFET is the latest development of


    Original     		PDF STS2DNF30L STS2DNF30L S2DNF30L

    FDMS9620S

    Abstract: DUAL N-CHANNEL POWERTRENCH MOSFET fdms9620s I-34
    Text: FDMS9620S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Features Q1: N-Channel General Description „ Max rDS on = 21.5mΩ at VGS = 10V, ID = 7.5A This device includes two specialized MOSFETs in a unique dual „ Max rDS(on) = 29.5mΩ at VGS = 4.5V, ID = 6.5A


    Original     		PDF FDMS9620S FDMS9620S DUAL N-CHANNEL POWERTRENCH MOSFET fdms9620s I-34

    Untitled

    Abstract: No abstract text available
    Text: RF1K49088 HARRIS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    OCR Scan     		PDF RF1K49088 RF1K49088 42e-9 1e-30 02e-3 98e-6) 50e-3 70e-6) 53e-3