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    DUAL N-CHANNEL MOSFET SOP8 Search Results

    DUAL N-CHANNEL MOSFET SOP8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL N-CHANNEL MOSFET SOP8 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.


    Original     		12NN10 12NN10 12NN10G-S08-R QW-R502-506 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION SOP-8 The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.


    Original     		12NN10 12NN10 12NN10L-S08-R 12NN10G-S08-R QW-R502-506 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10NN15 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and


    Original     		10NN15 10NN15 10NN15L-S08-R 10NN15G-S08-R QW-R502-565 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10NN15 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and


    Original     		10NN15 10NN15 10NN15L-S08-R 10NN15G-S08-R 2011Unisonic QW-R502-565 PDF

    DMN2040LSD

    Abstract: DMN2040LSD-13 J-STD-020D N2040L
    Text: DMN2040LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 26mΩ @ VGS = 4.5V


    Original     		DMN2040LSD J-STD-020D DS31517 DMN2040LSD DMN2040LSD-13 J-STD-020D N2040L PDF

    Untitled

    Abstract: No abstract text available
    Text: SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features • Low VGS th : VGS(th)=1.0~3.0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A)


    Original     		SUF2001 13-MAR-13 KSD-T7F002-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUF76105DK8 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,


    Original     		HUF76105DK8 6105D PDF

    DMP2066

    Abstract: P2066 46a p-channel P2066LD DMP2066LSD-13 P channel MOSFET 10A schematic J-STD-020D
    Text: DMP2066LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance • 40mΩ @ VGS = -4.5V


    Original     		DMP2066LSD AEC-Q101 J-STD-020D DS31453 DMP2066 P2066 46a p-channel P2066LD DMP2066LSD-13 P channel MOSFET 10A schematic J-STD-020D PDF

    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet January 2003 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334 PDF

    AN9321

    Abstract: HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 TM Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4387.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUF76113DK8 powe15mm) MS-012AA 330mm EIA-481 AN9321 HUF76113DK8 HUF76113DK8T MS-012AA TB334 PDF

    p3098

    Abstract: No abstract text available
    Text: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65m @ VGS = -10V • 115m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		DMP3098LSD AEC-Q101 J-STD-020D DS31448 p3098 PDF

    P2066

    Abstract: No abstract text available
    Text: DMP2066LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features N EW PRODUCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 40mΩ @ VGS = -4.5V


    Original     		DMP2066LSD AEC-Q101 J-STD-020D MIL-STD-202, DS31453 P2066 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP2066LSD N EW PRODU CT DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance • 40m @ VGS = -4.5V • 70m @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		DMP2066LSD AEC-Q101 J-STD-020D DS31453 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UD4840-H Power MOSFET 6A, 40V DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UD4840-H is a dual N-Channel enhancement mode field effect transistor, it uses UTC’s advanced technology to provide


    Original     		UD4840-H UD4840-H UT4810DG-S08-R QW-R211-025 PDF

    AF6930N

    Abstract: No abstract text available
    Text: AF6930N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - DC-DC Application - Surface Mount Package - Dual N-channel Device The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		AF6930N 6930N 015x45 AF6930N PDF

    76105DK8

    Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF76105DK8 76105DK8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334 PDF

    76105DK8

    Abstract: AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 TM Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF76105DK8 Fil15mm) MS-012AA 330mm EIA-481 76105DK8 AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334 PDF

    76105DK8

    Abstract: Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF76105DK8 76105DK8 Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334 PDF

    4801 MOSFET

    Abstract: PHB95NO3LT RT9600 block diagram of dual 12v power supply RT9237 PHB83NO3LT RT9600CS dual n-channel buck mosfet driver 12v
    Text: RT9600 Preliminary Synchronous-Rectified Buck MOSFET Drivers General Description Features The RT9600 is a high frequency, dual MOSFET z Drives Two N-Channel MOSFETs driver specifically designed to drive two power N- z Adaptive Shoot-Through Protection Channel MOSFETs in a synchronous-rectified buck


    Original     		RT9600 RT9600 RT9237 DS9600-00 4801 MOSFET PHB95NO3LT block diagram of dual 12v power supply PHB83NO3LT RT9600CS dual n-channel buck mosfet driver 12v PDF

    76105dk8

    Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF76105DK8 76105dk8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF76105DK8 HUF76105DK8 HUF76105DK8T136 HUF76105DK8T PDF

    UF76113

    Abstract: No abstract text available
    Text: 33 HUF76113DK8 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET July 1998 Description Features UttraFi Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		HUF76113DK8 1-800-4-HARRIS UF76113 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Semiconductor Data Sheet October 1998 Features 5A, 30 V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		HUF76105DK8 1-800-4-HARRIS PDF