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    DUAL MOSFET 463 Search Results

    DUAL MOSFET 463 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    DUAL MOSFET 463 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF5820

    Abstract: SI3443DV IRF5800 IRF5850
    Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


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    PDF 3947A IRF5850 IRF5850 OT-23 IRF5820 SI3443DV IRF5800

    IRF5850

    Abstract: No abstract text available
    Text: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


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    PDF IRF5850 IRF5850 OT-23 i252-7105

    IRF7328

    Abstract: No abstract text available
    Text: PD -94000 IRF7328 HEXFET Power MOSFET ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from


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    PDF IRF7328 ie52-7105 IRF7328

    IRF7901D1

    Abstract: No abstract text available
    Text: PD - 93844 IRF7901D1 PROVISIONAL DATASHEET Dual FETKYTM • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier


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    PDF IRF7901D1 IRF7901D1

    IRF7342

    Abstract: No abstract text available
    Text: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l VDSS = -55V RDS on = 0.105Ω Fifth Generation HEXFETs from International Rectifier


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    PDF IRF7342 IRF7342

    IPS042G

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No.PD 60153-G IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • · · · · Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS042G is a fully protected dual low side SMART


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    PDF 60153-G IPS042G IPS042G 165oC

    4.5v to 100v input regulator

    Abstract: No abstract text available
    Text: PD -94030 IRF7752 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS 30V RDS(on) max ID 0.030@VGS = 10V 4.6A 0.036@VGS = 4.5V 3.9A Description HEXFET® power MOSFETs from International Rectifier


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    PDF IRF7752 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: PD -91865 IRF7555 PRELIMINARY HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V


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    PDF IRF7555

    EIA-541

    Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
    Text: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier


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    PDF IRF7751 EIA-541 IRF7751 TSSOP-8 footprint 7702 ST irf 146

    IRF7509

    Abstract: No abstract text available
    Text: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T


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    PDF 91270J IRF7509 IRF7509

    IRF7342

    Abstract: No abstract text available
    Text: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V


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    PDF IRF7342 IRF7342

    p-channel 250V 30A power mosfet

    Abstract: No abstract text available
    Text: PD -91865A IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.055W


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    PDF -91865A IRF7555 p-channel 250V 30A power mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 93848 IRF7750 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS = -20V RDS(on) = 0.030Ω TSSOP-8 Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely


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    PDF IRF7750

    IRF7341

    Abstract: IRF7341 application note
    Text: PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V


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    PDF IRF7341 IRF7341 IRF7341 application note

    IRF7509

    Abstract: IRF7509P 91270j IRF7509N
    Text: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T


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    PDF 91270J IRF7509 IRF7509 IRF7509P 91270j IRF7509N

    IRF7750

    Abstract: No abstract text available
    Text: PD - 93848A IRF7750 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS = -20V RDS(on) = 0.030Ω TSSOP-8 Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely


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    PDF 3848A IRF7750 IRF7750

    IRF7324

    Abstract: No abstract text available
    Text: PD -93799A IRF7324 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile <1.1mm Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.018Ω


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    PDF -93799A IRF7324 IRF7324

    Untitled

    Abstract: No abstract text available
    Text: PD -91865A IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -20V RDS(on) = 0.055Ω


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    PDF -91865A IRF7555

    IRF7507

    Abstract: f7501
    Text: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8


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    PDF 91269I IRF7507 IRF7507 f7501

    IRF7507

    Abstract: No abstract text available
    Text: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8


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    PDF 91269I IRF7507 IRF7507

    IRF7507

    Abstract: No abstract text available
    Text: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8


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    PDF 91269I IRF7507 IRF7507

    13A40

    Abstract: No abstract text available
    Text: PD-93760 IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω


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    PDF PD-93760 IRF7530 13A40

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -91865A International i R Rectifier IRF7555 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Voss = -20V Ftas(on) = 0.055D


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    PDF -91865A IRF7555 DD33334