NTE221
Abstract: depletion MOSFET riss
Text: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.
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NTE221
NTE221
depletion MOSFET
riss
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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BCR108S
Abstract: BG3230 mosfet 2g2
Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
OT363
BCR108S
BG3230
mosfet 2g2
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
BG3230R
OT363
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PDF
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BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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Original
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
Feb-27-2004
BG3230R
VPS05604
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PDF
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BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
BG3230R
VPS05604
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PDF
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BCR108S
Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
BG3230
OT363
BCR108S
BG3230R
mosfet 2g2
marking code 4D
marking G2s
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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BG3130
Abstract: BG3130R VPS05604 3D SOT363
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3130.
VPS05604
BG3130
BG3130R
EHA07461
OT363
Feb-27-2004
BG3130
BG3130R
VPS05604
3D SOT363
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Untitled
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
OT363
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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PDF
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marking K1 sot363
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
EHA07461
OT363
OT363
marking K1 sot363
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PDF
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BCR108S
Abstract: BG3130 BG3130R 3D SOT363 marking K1 sot363
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
OT363
18may
BCR108S
BG3130
BG3130R
3D SOT363
marking K1 sot363
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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BG3430R
Abstract: Marking G2 BCR108S
Text: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range
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BG3430R
OT363
BG3430R
Marking G2
BCR108S
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KDS DATE CODE
Abstract: No abstract text available
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
BG3140R
OT363
KDS DATE CODE
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MA2220
Abstract: No abstract text available
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
MA2220
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BG3140
Abstract: BG3140R VPS05604
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
VPS05604
BG3140
BG3140R
EHA07461
OT363
Feb-27-2004
BG3140
BG3140R
VPS05604
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Untitled
Abstract: No abstract text available
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
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G2 marking
Abstract: BG3140R
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
BG3140R
OT363
G2 marking
BG3140R
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22100K
Abstract: No abstract text available
Text: BG3140. 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated gate protection diodes • Low noise figure 2 3 VPS05604 • High gain, high forward transadmittance
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
22100K
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BG5120K
Abstract: BCR108S
Text: BG5120K Dual N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range
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BG5120K
OT363
BG5120K
BCR108S
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Untitled
Abstract: No abstract text available
Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction
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BG5120K
OT363
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BCR108S
Abstract: BG5120K k914
Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction
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BG5120K
OT363
BCR108S
BG5120K
k914
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